JPS5571040A - Multilayer interconnection structure - Google Patents

Multilayer interconnection structure

Info

Publication number
JPS5571040A
JPS5571040A JP14589978A JP14589978A JPS5571040A JP S5571040 A JPS5571040 A JP S5571040A JP 14589978 A JP14589978 A JP 14589978A JP 14589978 A JP14589978 A JP 14589978A JP S5571040 A JPS5571040 A JP S5571040A
Authority
JP
Japan
Prior art keywords
layer
hole
interconnection
laminated
chemical vapor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14589978A
Other languages
Japanese (ja)
Other versions
JPS5910064B2 (en
Inventor
Tatsuya Enomoto
Hiroji Harada
Shinichi Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP14589978A priority Critical patent/JPS5910064B2/en
Publication of JPS5571040A publication Critical patent/JPS5571040A/en
Publication of JPS5910064B2 publication Critical patent/JPS5910064B2/en
Expired legal-status Critical Current

Links

Abstract

PURPOSE: To have a good electrical contact in a through hole by preventing oxygen from being produced for sputter etching or etching in LSI manufacture.
CONSTITUTION: In the case of two-layer interconnection, a low-temperature oxidized Si-layer 4 formed through chemical vapor phase reaction or plasma chemical vapor phase reaction is laminated on the surface of a single-layer interconnection Al-layer 3, and a low-temperature nitrated Si-layer 12 formed through plasma chemical vapor phase reaction is laminated on the surface of the layer 4. After a through hole 5 is perforated in the layers 12 and 4, an Al oxide produced in the through hole of the single-layer interconnection Al-layer 3 is removed through sputter etching in vacuum, and then a two-layer interconnection Al-layer 6 connected electrically to the single-layer interconnection Al-layer 3 by way of the through hole 5 is laminated to formation on the nitrated Si-layer 12 in the same vacuum tank.
COPYRIGHT: (C)1980,JPO&Japio
JP14589978A 1978-11-22 1978-11-22 Manufacturing method of multilayer wiring structure Expired JPS5910064B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14589978A JPS5910064B2 (en) 1978-11-22 1978-11-22 Manufacturing method of multilayer wiring structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14589978A JPS5910064B2 (en) 1978-11-22 1978-11-22 Manufacturing method of multilayer wiring structure

Publications (2)

Publication Number Publication Date
JPS5571040A true JPS5571040A (en) 1980-05-28
JPS5910064B2 JPS5910064B2 (en) 1984-03-06

Family

ID=15395624

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14589978A Expired JPS5910064B2 (en) 1978-11-22 1978-11-22 Manufacturing method of multilayer wiring structure

Country Status (1)

Country Link
JP (1) JPS5910064B2 (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58125838A (en) * 1982-01-22 1983-07-27 Mitsubishi Electric Corp Manufacture of electrode
JPS59114840A (en) * 1982-12-22 1984-07-03 Oki Electric Ind Co Ltd Manufacture of semiconductor device
JPS6064452A (en) * 1983-06-06 1985-04-13 フエアチアイルド　カメラ　アンド　インストルメント　コ−ポレ−シヨン Aluminum mutual connector with copper
JPS61214538A (en) * 1985-03-20 1986-09-24 Hitachi Ltd Wiring structure and its manufacture
JPS6419763A (en) * 1987-01-22 1989-01-23 Advanced Micro Devices Inc Improved integrated circuit structure and method of forming improved integrated circuit structure
JPS6451620A (en) * 1987-08-24 1989-02-27 Fujitsu Ltd Vapor growth method
US5371047A (en) * 1992-10-30 1994-12-06 International Business Machines Corporation Chip interconnection having a breathable etch stop layer

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58125838A (en) * 1982-01-22 1983-07-27 Mitsubishi Electric Corp Manufacture of electrode
JPS59114840A (en) * 1982-12-22 1984-07-03 Oki Electric Ind Co Ltd Manufacture of semiconductor device
JPS6064452A (en) * 1983-06-06 1985-04-13 フエアチアイルド　カメラ　アンド　インストルメント　コ−ポレ−シヨン Aluminum mutual connector with copper
JPS61214538A (en) * 1985-03-20 1986-09-24 Hitachi Ltd Wiring structure and its manufacture
JPS6419763A (en) * 1987-01-22 1989-01-23 Advanced Micro Devices Inc Improved integrated circuit structure and method of forming improved integrated circuit structure
JPS6451620A (en) * 1987-08-24 1989-02-27 Fujitsu Ltd Vapor growth method
US5371047A (en) * 1992-10-30 1994-12-06 International Business Machines Corporation Chip interconnection having a breathable etch stop layer

Also Published As

Publication number Publication date
JPS5910064B2 (en) 1984-03-06

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