JPS6450443A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS6450443A
JPS6450443A JP62206813A JP20681387A JPS6450443A JP S6450443 A JPS6450443 A JP S6450443A JP 62206813 A JP62206813 A JP 62206813A JP 20681387 A JP20681387 A JP 20681387A JP S6450443 A JPS6450443 A JP S6450443A
Authority
JP
Japan
Prior art keywords
electric conductor
contact hole
insulating layer
conductor layer
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62206813A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0546984B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Inventor
Susumu Yoshikawa
Shizuo Sawada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP62206813A priority Critical patent/JPS6450443A/ja
Priority to US07/223,971 priority patent/US4916521A/en
Priority to KR1019880010608A priority patent/KR910006973B1/ko
Publication of JPS6450443A publication Critical patent/JPS6450443A/ja
Publication of JPH0546984B2 publication Critical patent/JPH0546984B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes)
    • H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes) consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
    • H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Memories (AREA)
JP62206813A 1987-08-20 1987-08-20 Semiconductor device Granted JPS6450443A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP62206813A JPS6450443A (en) 1987-08-20 1987-08-20 Semiconductor device
US07/223,971 US4916521A (en) 1987-08-20 1988-07-25 Contact portion of semiconductor integrated circuit device
KR1019880010608A KR910006973B1 (ko) 1987-08-20 1988-08-20 반도체집적회로장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62206813A JPS6450443A (en) 1987-08-20 1987-08-20 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS6450443A true JPS6450443A (en) 1989-02-27
JPH0546984B2 JPH0546984B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1993-07-15

Family

ID=16529513

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62206813A Granted JPS6450443A (en) 1987-08-20 1987-08-20 Semiconductor device

Country Status (3)

Country Link
US (1) US4916521A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JPS6450443A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
KR (1) KR910006973B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06177263A (ja) * 1992-07-14 1994-06-24 Hyundai Electron Ind Co Ltd ワード線分岐の金属コンタクト製造方法

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2772020B2 (ja) * 1989-02-22 1998-07-02 株式会社東芝 Ｍｏｓ型半導体装置
EP0393635B1 (en) * 1989-04-21 1997-09-03 Nec Corporation Semiconductor device having multi-level wirings
JPH03129738A (ja) * 1989-07-10 1991-06-03 Nec Corp 半導体装置
US5216280A (en) * 1989-12-02 1993-06-01 Kabushiki Kaisha Toshiba Semiconductor integrated circuit device having pads at periphery of semiconductor chip
JPH04226054A (ja) * 1990-03-02 1992-08-14 Toshiba Corp 多層配線構造を有する半導体装置及びその製造方法
US5243219A (en) * 1990-07-05 1993-09-07 Mitsubishi Denki Kabushiki Kaisha Semiconductor device having impurity diffusion region formed in substrate beneath interlayer contact hole
JP3238395B2 (ja) * 1990-09-28 2001-12-10 株式会社東芝 半導体集積回路
JP2863322B2 (ja) * 1990-12-07 1999-03-03 三井化学株式会社 ジメチルアミンボランの造粒方法
JP2950620B2 (ja) * 1990-12-10 1999-09-20 株式会社東芝 半導体装置
US5466961A (en) 1991-04-23 1995-11-14 Canon Kabushiki Kaisha Semiconductor device and method of manufacturing the same
US5170243A (en) * 1991-11-04 1992-12-08 International Business Machines Corporation Bit line configuration for semiconductor memory
US5355023A (en) * 1992-06-05 1994-10-11 Nippon Steel Corporation Semiconductor device having conducting layers connected through contact holes
DE4328474C2 (de) * 1993-08-24 1996-09-12 Gold Star Electronics Mehrschichtverbindungsstruktur für eine Halbleitereinrichtung
JPH07245343A (ja) * 1994-03-03 1995-09-19 Toshiba Corp 半導体装置及びその製造方法
US5619072A (en) * 1995-02-09 1997-04-08 Advanced Micro Devices, Inc. High density multi-level metallization and interconnection structure
JPH08306774A (ja) * 1995-05-01 1996-11-22 Oki Electric Ind Co Ltd 半導体装置及びその製造方法
JP3432963B2 (ja) * 1995-06-15 2003-08-04 沖電気工業株式会社 半導体集積回路
JPH09232423A (ja) * 1996-02-21 1997-09-05 Nec Corp 半導体装置およびその製造方法
US5808361A (en) * 1997-02-10 1998-09-15 Advanced Micro Devices, Inc. Intergrated circuit interconnect via structure having low resistance
JP3109478B2 (ja) * 1998-05-27 2000-11-13 日本電気株式会社 半導体装置
JPH11354637A (ja) * 1998-06-11 1999-12-24 Oki Electric Ind Co Ltd 配線の接続構造及び配線の接続部の形成方法
US8198188B1 (en) * 2008-01-28 2012-06-12 Cadence Design Systems, Inc. Self-aligned VIAS for semiconductor devices
US9202713B2 (en) * 2010-07-26 2015-12-01 Stats Chippac, Ltd. Semiconductor device and method of forming RDL over contact pad with high alignment tolerance or reduced interconnect pitch

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57141937A (en) * 1981-02-26 1982-09-02 Seiko Epson Corp Wiring structure for semiconductor device

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3877051A (en) * 1972-10-18 1975-04-08 Ibm Multilayer insulation integrated circuit structure
JPS57177553A (en) * 1981-04-24 1982-11-01 Toshiba Corp Semiconductor
US4617193A (en) * 1983-06-16 1986-10-14 Digital Equipment Corporation Planar interconnect for integrated circuits

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57141937A (en) * 1981-02-26 1982-09-02 Seiko Epson Corp Wiring structure for semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06177263A (ja) * 1992-07-14 1994-06-24 Hyundai Electron Ind Co Ltd ワード線分岐の金属コンタクト製造方法

Also Published As

Publication number Publication date
KR910006973B1 (ko) 1991-09-14
KR890004421A (ko) 1989-04-21
JPH0546984B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1993-07-15
US4916521A (en) 1990-04-10

Similar Documents

Publication Publication Date Title
JPS6450443A (en) Semiconductor device
JPS6437032A (en) Bendable lead frame assembly of integrated circuit and integrated circuit package
EP0348046A3 (en) Method of producing a semiconductor device
KR920704344A (ko) 반도체 플레이트(p)상호 접속 방법 및 장치
EP0218437A3 (en) A microelectronics apparatus and method of interconnecting wiring planes
EP0330372A3 (en) Hybrid ic with heat sink
EP0394722A3 (en) Multilevel metallization for vlsi and method for forming the same
MY133863A (en) Passive component integrated circuit chip
EP0282012A3 (en) Superconducting semiconductor device
ATE67897T1 (de) Integrierte halbleiterschaltung mit einem elektrisch leitenden flaechenelement.
MY132219A (en) Method of manufacturing a semiconductor device suitable for surface mounting
JPS57145367A (en) Three-dimensional semiconductor device
JPS5636147A (en) Semiconductor device and its manufacture
JPS6469034A (en) Semiconductor integrated circuit with decoupled d.c. wiring
JPS5644119A (en) Magnetic head
EP0333446A3 (en) Connecting structure for connecting conductors in an electronic apparatus
JPS6428891A (en) Multi-layer printed circuit board
JPS6428830A (en) Substrate for mounting semiconductor
JPS5775444A (en) Multilayer wiring method
JPS57201050A (en) Multilayer wiring structure
WO1992011743A3 (en) An interconnect structure for connecting electronic devices
KR920010820A (ko) 반도체 소자의 접속장치 및 그 제조방법
JPS6476747A (en) Semiconductor mounting board
JPS6436123A (en) A/d converter
JPS6469097A (en) Metal core circuit board

Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees