JPS57141937A - Wiring structure for semiconductor device - Google Patents
Wiring structure for semiconductor deviceInfo
- Publication number
- JPS57141937A JPS57141937A JP2753881A JP2753881A JPS57141937A JP S57141937 A JPS57141937 A JP S57141937A JP 2753881 A JP2753881 A JP 2753881A JP 2753881 A JP2753881 A JP 2753881A JP S57141937 A JPS57141937 A JP S57141937A
- Authority
- JP
- Japan
- Prior art keywords
- contact holes
- film
- polycrystalline
- wiring
- breaking
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:To prevent the breaking of wire on the upper layer wiring by a method wherein contact holes are formed on the insulating film located on a substrate by performing an etching, and a polycrystalline Si wirin layer is formed in such a manner that it is filling up the contact holes, thereby enabling to reduce contact resistance, to obtain high density and to flatten the surface of the wiring layer. CONSTITUTION:In the manufacturing process of an MOSIC, for example, after a source and drain region has been formed by providing an Si gate, the first interlayer SiO2 film 8 is deposited, and contact holes 9-11 of approximately 0.3mum in diameter are formed by performing a photoetive using an electron beam exposure. Then, a CVD polycrystalline Si film of 0.3mum or thereabouts in thickness is deposied on the whole surface, and a smooth-surface construction is obtained by filling up the contact holes. Subsequently, a patterning is performed on the polycrystalline Si film 12, and after contact holes 14-16 have been formed by providing the second interlayer film 13, an upper layer Al wiring 17, for example, is formed. Accordingly, as the contact resistance is reduced, the contact holes can be formed in microscopic measurements, thereby enabling to obtain a high degree of integration and to prevent the breaking of wire.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2753881A JPS57141937A (en) | 1981-02-26 | 1981-02-26 | Wiring structure for semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2753881A JPS57141937A (en) | 1981-02-26 | 1981-02-26 | Wiring structure for semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57141937A true JPS57141937A (en) | 1982-09-02 |
Family
ID=12223864
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2753881A Pending JPS57141937A (en) | 1981-02-26 | 1981-02-26 | Wiring structure for semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57141937A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60160634A (en) * | 1984-01-31 | 1985-08-22 | Fujitsu Ltd | Semiconductor device |
JPS6450443A (en) * | 1987-08-20 | 1989-02-27 | Toshiba Corp | Semiconductor device |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS53108389A (en) * | 1977-03-04 | 1978-09-21 | Hitachi Ltd | Manufacture for semiconductor device |
-
1981
- 1981-02-26 JP JP2753881A patent/JPS57141937A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS53108389A (en) * | 1977-03-04 | 1978-09-21 | Hitachi Ltd | Manufacture for semiconductor device |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60160634A (en) * | 1984-01-31 | 1985-08-22 | Fujitsu Ltd | Semiconductor device |
JPS6450443A (en) * | 1987-08-20 | 1989-02-27 | Toshiba Corp | Semiconductor device |
JPH0546984B2 (en) * | 1987-08-20 | 1993-07-15 | Tokyo Shibaura Electric Co |
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