JPS6449277A - Tunnel diode for negative resistance use - Google Patents
Tunnel diode for negative resistance useInfo
- Publication number
- JPS6449277A JPS6449277A JP20512987A JP20512987A JPS6449277A JP S6449277 A JPS6449277 A JP S6449277A JP 20512987 A JP20512987 A JP 20512987A JP 20512987 A JP20512987 A JP 20512987A JP S6449277 A JPS6449277 A JP S6449277A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type
- semiconductor layer
- inas1
- ysby
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Recrystallisation Techniques (AREA)
Abstract
PURPOSE:To eliminate a need to dope the tunnel route of a carrier with an impurity by providing a first semiconductor layer, a second semiconductor layer and a graded layer which is situated between both layers and whose composition is changed to be capable of continuously connecting forbidden bands. CONSTITUTION:The following three layers are provided: a first semiconductor layer (e.g., an n-type InAs1-ySby layer 6) and a second semiconductor layer (a p-type GaSb layer 2) where a bottom part of a conduction band of one of these two (e.g., the n-type InAs1-ySby layer 6) is in a state lower than a top part of a valence band of the other (e.g., the p-type GaSb layer 2) in a thermal equilibrium state and which can generate a heterojunction; a graded layer (e.g., an (InAs1-ySby)x(GaSb)1-x graded layer 4) which is situated between both layers and whose composition is changed in such a way that their forbidden bands can be connected continuously. By adopting this means, it is not required to dope the tunnel route of a carrier with an impurity.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20512987A JPS6449277A (en) | 1987-08-20 | 1987-08-20 | Tunnel diode for negative resistance use |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20512987A JPS6449277A (en) | 1987-08-20 | 1987-08-20 | Tunnel diode for negative resistance use |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6449277A true JPS6449277A (en) | 1989-02-23 |
Family
ID=16501913
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP20512987A Pending JPS6449277A (en) | 1987-08-20 | 1987-08-20 | Tunnel diode for negative resistance use |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6449277A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003518326A (en) * | 1999-11-17 | 2003-06-03 | エイチアールエル ラボラトリーズ,エルエルシー | Type II interband heterostructure rear diode |
JP2010251689A (en) * | 2009-03-27 | 2010-11-04 | Fujitsu Ltd | Semiconductor device |
-
1987
- 1987-08-20 JP JP20512987A patent/JPS6449277A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003518326A (en) * | 1999-11-17 | 2003-06-03 | エイチアールエル ラボラトリーズ,エルエルシー | Type II interband heterostructure rear diode |
JP2010251689A (en) * | 2009-03-27 | 2010-11-04 | Fujitsu Ltd | Semiconductor device |
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