JPS6448459A - Semiconductor integrated circuit - Google Patents

Semiconductor integrated circuit

Info

Publication number
JPS6448459A
JPS6448459A JP20412187A JP20412187A JPS6448459A JP S6448459 A JPS6448459 A JP S6448459A JP 20412187 A JP20412187 A JP 20412187A JP 20412187 A JP20412187 A JP 20412187A JP S6448459 A JPS6448459 A JP S6448459A
Authority
JP
Japan
Prior art keywords
current amplification
emitter
area
amplification factor
integrated circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP20412187A
Other languages
Japanese (ja)
Other versions
JP2558472B2 (en
Inventor
Keiichiro Shimizu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP62204121A priority Critical patent/JP2558472B2/en
Publication of JPS6448459A publication Critical patent/JPS6448459A/en
Application granted granted Critical
Publication of JP2558472B2 publication Critical patent/JP2558472B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Abstract

PURPOSE:To form a plural kind of transistors accurately into the same integrated circuit by controlling a current amplification factor only by changing the area of an opening in an emitter-electrode leading-out section. CONSTITUTION:The surface of an emitter-electrode leading-out opening section 8 is reduced in a transistor having a high current amplification factor, and spread reversely in a transistor having a low current amplification factor. Since the current amplification factor of the transistor is determined by the ratio of the area of the emitter-electrode leading-out opening section 8 to the area of an emitter region 1, the area ratio is changed, thus controlling the current amplification factor. Accordingly, the constitution of active bases is equalized, and only the area of an opening in an emitter-electrode leading-out section is altered, thus accurately forming a plural kind of transistors having different current amplification factors in the same integrated circuit.
JP62204121A 1987-08-19 1987-08-19 Semiconductor integrated circuit Expired - Lifetime JP2558472B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62204121A JP2558472B2 (en) 1987-08-19 1987-08-19 Semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62204121A JP2558472B2 (en) 1987-08-19 1987-08-19 Semiconductor integrated circuit

Publications (2)

Publication Number Publication Date
JPS6448459A true JPS6448459A (en) 1989-02-22
JP2558472B2 JP2558472B2 (en) 1996-11-27

Family

ID=16485167

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62204121A Expired - Lifetime JP2558472B2 (en) 1987-08-19 1987-08-19 Semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JP2558472B2 (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6086823A (en) * 1983-10-19 1985-05-16 Hitachi Ltd Semiconductor device and manufacture thereof
JPS62159467A (en) * 1985-12-31 1987-07-15 フィリップス　エレクトロニクス　ネムローゼ　フェンノートシャップ Manufacture of integrated lateral transistor and semiconductor device provided with lateral transistor

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6086823A (en) * 1983-10-19 1985-05-16 Hitachi Ltd Semiconductor device and manufacture thereof
JPS62159467A (en) * 1985-12-31 1987-07-15 フィリップス　エレクトロニクス　ネムローゼ　フェンノートシャップ Manufacture of integrated lateral transistor and semiconductor device provided with lateral transistor

Also Published As

Publication number Publication date
JP2558472B2 (en) 1996-11-27

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term