JPS6418238A - Semiconductor integrated circuit device - Google Patents
Semiconductor integrated circuit deviceInfo
- Publication number
- JPS6418238A JPS6418238A JP17524587A JP17524587A JPS6418238A JP S6418238 A JPS6418238 A JP S6418238A JP 17524587 A JP17524587 A JP 17524587A JP 17524587 A JP17524587 A JP 17524587A JP S6418238 A JPS6418238 A JP S6418238A
- Authority
- JP
- Japan
- Prior art keywords
- potential
- islands
- island
- parasitic transistor
- reversed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Element Separation (AREA)
Abstract
PURPOSE:To secure a paired state and to realize the high integration by a method wherein islands to be paired with each other are arranged diagonally and, even when a potential of one of these islands is reversed, an operation of a parasitic transistor formed by these islands and by a separation region is prevented. CONSTITUTION:An island 1 which is set to a high potential in relation to a lowest potential (a separation potential) and an island 4 whose potential may be reversed by an inductive load or the like are arranged in a diagonal direction in a lengthwise and breadthwise arrangement. Because the islands 1, 4 are arranged in the mutually diagonal direction, the island 1, a separation region 6 and the island 4 are used as a collector, a base and an emitter, respectively. A width of the base of a parasitic transistor 8 is expanded; even when the potential of the island 4 is reversed, an electric current is hardly flows to the parasitic transistor 8; an operation of the parasitic transistor 8 is prevented effectively. By this setup, while the operation of the parasitic transistor is being prevented, the islands to be paired with each other can be arranged closely, a required area can be reduced and the high integration can be secured.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17524587A JPS6418238A (en) | 1987-07-13 | 1987-07-13 | Semiconductor integrated circuit device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17524587A JPS6418238A (en) | 1987-07-13 | 1987-07-13 | Semiconductor integrated circuit device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6418238A true JPS6418238A (en) | 1989-01-23 |
Family
ID=15992798
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17524587A Pending JPS6418238A (en) | 1987-07-13 | 1987-07-13 | Semiconductor integrated circuit device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6418238A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5636097A (en) * | 1991-05-09 | 1997-06-03 | Consorzio Per La Ricerca Sulla Microelettronica | Protective circuit for semiconductor power device |
-
1987
- 1987-07-13 JP JP17524587A patent/JPS6418238A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5636097A (en) * | 1991-05-09 | 1997-06-03 | Consorzio Per La Ricerca Sulla Microelettronica | Protective circuit for semiconductor power device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE3884889T2 (en) | Integrated semiconductor circuit arrangement with a group of logic circuits and a group of RAM memories. | |
| EP0183562A3 (en) | Polysilicon diodes | |
| DE3855603T2 (en) | Integrated high voltage bipolar power transistor and low voltage MOS transistor structure in emitter switching configuration and manufacturing process | |
| JPS6438812A (en) | Voltage adjusting circuit | |
| MY108561A (en) | Electrode for semiconductor element and semiconductor device having the electrode and process for producing the same. | |
| JPS52131449A (en) | Semiconductor switch circuit | |
| JPS6418238A (en) | Semiconductor integrated circuit device | |
| EP0342695A3 (en) | Semiconductor device | |
| JPS52154383A (en) | Semiconductor integrated circuit device | |
| JPS5582448A (en) | Master slice semiconductor integrated circuit | |
| EP0403016A3 (en) | Semiconductor device comprising a control circuit and a power stage with vertical current flow, integrated in monolithic form in the same chip, and related manufacturing process | |
| FR2377704A1 (en) | Integrated injection logic semiconductor circuit - has two highly doped zones separated from the surface by lightly doped zones for low voltage, high power applications | |
| EP0056191A2 (en) | Integrated injection logic | |
| JPS6414980A (en) | Superconducting transistor | |
| JPS533781A (en) | Semiconductor integrated circuit | |
| JPS6418237A (en) | Semiconductor device | |
| JPS5689130A (en) | Electronic circuit | |
| JPS6431452A (en) | Semiconductor integrated circuit containing current mirror | |
| JPS5648720A (en) | Inductive load driving circuit | |
| JPS5562762A (en) | Semiconductor device | |
| JPS55162261A (en) | Semiconductor ic device | |
| JPS63126314A (en) | Switch circuit | |
| JPS645051A (en) | Compound semiconductor integrated circuit device and manufacture thereof | |
| JPS63126315A (en) | Switch circuit | |
| JPS5343484A (en) | Semiconductor integrated circuit device |