JPS6414980A - Superconducting transistor - Google Patents

Superconducting transistor

Info

Publication number
JPS6414980A
JPS6414980A JP62171453A JP17145387A JPS6414980A JP S6414980 A JPS6414980 A JP S6414980A JP 62171453 A JP62171453 A JP 62171453A JP 17145387 A JP17145387 A JP 17145387A JP S6414980 A JPS6414980 A JP S6414980A
Authority
JP
Japan
Prior art keywords
source
layer
drain
electrode
piezoelectric body
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62171453A
Other languages
Japanese (ja)
Inventor
Takashi Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP62171453A priority Critical patent/JPS6414980A/en
Publication of JPS6414980A publication Critical patent/JPS6414980A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00Superconducting devices
    • H10N60/80Constructional details
    • H10N60/84Switching means for devices switchable between superconducting and normal states
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00Superconducting devices
    • H10N60/20Permanent superconducting devices
    • H10N60/205Permanent superconducting devices having three or more electrodes, e.g. transistor-like structures 
    • H10N60/207Field effect devices

Landscapes

  • Superconductor Devices And Manufacturing Methods Thereof (AREA)

Abstract

PURPOSE:To enable an intense current to be supplied without obstructing high integration by a method wherein a piezo-electric body layer and an electrode are successively formed on a channel region comprising super conductor layer. CONSTITUTION:A channel region C and source drain regions A, B comprising Y-Ba-Cu-O superconductive layer 9 are formed on a silicon wafer 8. When the superconductive layer 9 is in the superconductive state, electrons in any level as necessary can be fed without generating any heat from the source A to the drain B or vice versa. When a voltage is impressed from an electrode 11 to a piezoelectric body 10, the vibration in the piezoelectric body 10 is transmitted to the region C in the superconductor layer 9 to bring about the constant conductive state in the region C resultantly reducing the electrons running between the source A and the drain B notably. In such a constitution, there is neither any overlap holding the piezoelectric body 10 between the source A, the drain B and the electrode 11 or any parasitic capacity in principle so that any spike, etc., resultant from ON, OFF operations may not occur making circuit operation at higher speed feasible.
JP62171453A 1987-07-09 1987-07-09 Superconducting transistor Pending JPS6414980A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62171453A JPS6414980A (en) 1987-07-09 1987-07-09 Superconducting transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62171453A JPS6414980A (en) 1987-07-09 1987-07-09 Superconducting transistor

Publications (1)

Publication Number Publication Date
JPS6414980A true JPS6414980A (en) 1989-01-19

Family

ID=15923384

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62171453A Pending JPS6414980A (en) 1987-07-09 1987-07-09 Superconducting transistor

Country Status (1)

Country Link
JP (1) JPS6414980A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01129479A (en) * 1987-11-16 1989-05-22 Matsushita Electric Ind Co Ltd Superconducting element
JPH01204484A (en) * 1988-02-09 1989-08-17 Nec Corp Superconductor electronic device
JPH01276681A (en) * 1988-04-27 1989-11-07 Sony Corp Superconducting transistor
EP0399327A2 (en) * 1989-05-23 1990-11-28 Motorola, Inc. Electrically switched superconductors
EP0539205A2 (en) * 1991-10-23 1993-04-28 Hitachi Europe Limited Phonon controlled conductivity device
JP2008240789A (en) * 2007-03-26 2008-10-09 Inaba Denki Sangyo Co Ltd Lengthy body support

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01129479A (en) * 1987-11-16 1989-05-22 Matsushita Electric Ind Co Ltd Superconducting element
JPH01204484A (en) * 1988-02-09 1989-08-17 Nec Corp Superconductor electronic device
JPH01276681A (en) * 1988-04-27 1989-11-07 Sony Corp Superconducting transistor
EP0399327A2 (en) * 1989-05-23 1990-11-28 Motorola, Inc. Electrically switched superconductors
EP0399327A3 (en) * 1989-05-23 1991-04-10 Motorola, Inc. Electrically switched superconductors
EP0539205A2 (en) * 1991-10-23 1993-04-28 Hitachi Europe Limited Phonon controlled conductivity device
EP0539205A3 (en) * 1991-10-23 1993-12-29 Hitachi Europ Ltd Phonon controlled conductivity device
US5324976A (en) * 1991-10-23 1994-06-28 Hitachi, Ltd. Phonon controlled conductivity device
JP2008240789A (en) * 2007-03-26 2008-10-09 Inaba Denki Sangyo Co Ltd Lengthy body support

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