JPS6447029U - - Google Patents
Info
- Publication number
- JPS6447029U JPS6447029U JP14220387U JP14220387U JPS6447029U JP S6447029 U JPS6447029 U JP S6447029U JP 14220387 U JP14220387 U JP 14220387U JP 14220387 U JP14220387 U JP 14220387U JP S6447029 U JPS6447029 U JP S6447029U
- Authority
- JP
- Japan
- Prior art keywords
- reaction tube
- vapor phase
- phase growth
- growth apparatus
- outer periphery
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001947 vapour-phase growth Methods 0.000 claims 4
- 239000007789 gas Substances 0.000 claims 2
- 239000002994 raw material Substances 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 3
- 239000010408 film Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14220387U JPS6447029U (no) | 1987-09-17 | 1987-09-17 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14220387U JPS6447029U (no) | 1987-09-17 | 1987-09-17 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6447029U true JPS6447029U (no) | 1989-03-23 |
Family
ID=31407951
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14220387U Pending JPS6447029U (no) | 1987-09-17 | 1987-09-17 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6447029U (no) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001152344A (ja) * | 1999-11-29 | 2001-06-05 | Fujitsu Ltd | 化学蒸着装置 |
JP2002506570A (ja) * | 1997-06-25 | 2002-02-26 | ラム・リサーチ・コーポレーション | 基板をパッシベートするためのプラズマ反応炉 |
US7632093B2 (en) | 2004-09-06 | 2009-12-15 | Samsung Electronics Co., Ltd. | Pyrolysis furnace having gas flowing path controller |
-
1987
- 1987-09-17 JP JP14220387U patent/JPS6447029U/ja active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002506570A (ja) * | 1997-06-25 | 2002-02-26 | ラム・リサーチ・コーポレーション | 基板をパッシベートするためのプラズマ反応炉 |
JP2001152344A (ja) * | 1999-11-29 | 2001-06-05 | Fujitsu Ltd | 化学蒸着装置 |
US7632093B2 (en) | 2004-09-06 | 2009-12-15 | Samsung Electronics Co., Ltd. | Pyrolysis furnace having gas flowing path controller |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS6447029U (no) | ||
JPS5671927A (en) | Manufacture of amorphous hydro-silicon layer | |
JPS5358761A (en) | Vapor phase growth apparatus | |
JPS62201927U (no) | ||
JPS6144829U (ja) | 3−5族化合物半導体の熱分解による気相エピタキシヤル成長装置 | |
JPS61192443U (no) | ||
JPH0320434U (no) | ||
JPH02146165U (no) | ||
JPH0341847U (no) | ||
JPS63132422A (ja) | 気相成長装置用反応管 | |
JPS59103770U (ja) | 薄膜気相成長装置 | |
JPS5375857A (en) | Vapor phase growth apparatus | |
JPH02118758U (no) | ||
JPS62284078A (ja) | 化学気相成長方法 | |
JPS5518077A (en) | Device for growing film under gas | |
JPH0351834U (no) | ||
JPS62203272U (no) | ||
JPS62148574U (no) | ||
JPS6349231U (no) | ||
JPS63193830U (no) | ||
JPS6322729U (no) | ||
JPS62180933U (no) | ||
JPH02146725A (ja) | 有機金属気相成長装置 | |
JPS58168575U (ja) | 有機金属気相成長装置 | |
JPH02101529U (no) |