JPS6446934A - Detection of quantity of etched surface of solid - Google Patents

Detection of quantity of etched surface of solid

Info

Publication number
JPS6446934A
JPS6446934A JP20378287A JP20378287A JPS6446934A JP S6446934 A JPS6446934 A JP S6446934A JP 20378287 A JP20378287 A JP 20378287A JP 20378287 A JP20378287 A JP 20378287A JP S6446934 A JPS6446934 A JP S6446934A
Authority
JP
Japan
Prior art keywords
etching
resist
scale pattern
depth
opening
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP20378287A
Other languages
Japanese (ja)
Inventor
Shigeto Maekawa
Hidenobu Ishikura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP20378287A priority Critical patent/JPS6446934A/en
Publication of JPS6446934A publication Critical patent/JPS6446934A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To measure the depth of etching simply and rapidly without using a step measuring device by mounting a resist with an opening and a scale pattern arranged near the opening to the etched surface of a solid and observing the quantity of side etching, employing the scale pattern as a reference. CONSTITUTION:Isotropic Si etching is conducted to a substrate 1 to which a resist 2 and a scale pattern 3 are set up. Since etching progresses in an isotropic manner, an etching region is spread both in the thickness direction and cross direction of the substrate 1 from an opening section in the resist 2. Since a certain relationship holds between the quantity of etching (l) in the cross direction and the depth (d) of a groove at that time, the depth (d) of the groove can be determined when the quantity of side etching (l) is caught. The quantity of side etching (l) can be read by observing the scale pattern 3 and the edge section of the etching region by a light microscope because the edge section of the etching region is viewed from an upper section through the resist 2. Accordingly, the quantity of etching can easily be determined quickly without using a step measuring device.
JP20378287A 1987-08-17 1987-08-17 Detection of quantity of etched surface of solid Pending JPS6446934A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20378287A JPS6446934A (en) 1987-08-17 1987-08-17 Detection of quantity of etched surface of solid

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20378287A JPS6446934A (en) 1987-08-17 1987-08-17 Detection of quantity of etched surface of solid

Publications (1)

Publication Number Publication Date
JPS6446934A true JPS6446934A (en) 1989-02-21

Family

ID=16479681

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20378287A Pending JPS6446934A (en) 1987-08-17 1987-08-17 Detection of quantity of etched surface of solid

Country Status (1)

Country Link
JP (1) JPS6446934A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5317191A (en) * 1991-08-19 1994-05-31 Mitsubishi Denki Kabushiki Kaisha Low-melting-point junction material having high-melting-point particles uniformly dispersed therein
JP2007083341A (en) * 2005-09-22 2007-04-05 Seiko Epson Corp Manufacturing method for mems element
JP2014018871A (en) * 2012-07-12 2014-02-03 Seiko Epson Corp Process monitor element, and method for manufacturing mems element

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5317191A (en) * 1991-08-19 1994-05-31 Mitsubishi Denki Kabushiki Kaisha Low-melting-point junction material having high-melting-point particles uniformly dispersed therein
JP2007083341A (en) * 2005-09-22 2007-04-05 Seiko Epson Corp Manufacturing method for mems element
JP2014018871A (en) * 2012-07-12 2014-02-03 Seiko Epson Corp Process monitor element, and method for manufacturing mems element

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