JPS6445170A - Manufacture of semiconductor switching element - Google Patents

Manufacture of semiconductor switching element

Info

Publication number
JPS6445170A
JPS6445170A JP20098987A JP20098987A JPS6445170A JP S6445170 A JPS6445170 A JP S6445170A JP 20098987 A JP20098987 A JP 20098987A JP 20098987 A JP20098987 A JP 20098987A JP S6445170 A JPS6445170 A JP S6445170A
Authority
JP
Japan
Prior art keywords
anode region
metallic sheet
alloying
impurity
life time
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP20098987A
Other languages
Japanese (ja)
Inventor
Masanori Inuta
Koji Yoshida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toyota Industries Corp
Original Assignee
Toyoda Automatic Loom Works Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toyoda Automatic Loom Works Ltd filed Critical Toyoda Automatic Loom Works Ltd
Priority to JP20098987A priority Critical patent/JPS6445170A/en
Publication of JPS6445170A publication Critical patent/JPS6445170A/en
Pending legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)
  • Thyristors (AREA)
  • Die Bonding (AREA)

Abstract

PURPOSE:To cut down the manufacturing processes by alloying an impurity material arranged between an anode region and a metallic sheet. CONSTITUTION:An impurity diffusing process and an alloying process are simul taneously performed by alloying a material 21 comprising an impurity to be a life time killer arranged between an anode region 4 and a metallic sheet 4. In other words, the temperature for diffusing the life time killer such as gold, platinum etc., is almost similar to that for junctioning the metallic sheet 9 such as molybdenum, tungsten etc., by alloying process. Consequently, when said material 21 arranged between the anode region 4 and the metallic sheet 9 is alloyed, the life time killer is diffused in the semiconductor layer through the intermediary of the anode region 4 simultaneously the metallic sheet 9 is junctioned with the surface of the anode region 4. Through these procedures, the manufacturing process can be cut down while eliminating the installation of new diffusion furnace.
JP20098987A 1987-08-13 1987-08-13 Manufacture of semiconductor switching element Pending JPS6445170A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20098987A JPS6445170A (en) 1987-08-13 1987-08-13 Manufacture of semiconductor switching element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20098987A JPS6445170A (en) 1987-08-13 1987-08-13 Manufacture of semiconductor switching element

Publications (1)

Publication Number Publication Date
JPS6445170A true JPS6445170A (en) 1989-02-17

Family

ID=16433654

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20098987A Pending JPS6445170A (en) 1987-08-13 1987-08-13 Manufacture of semiconductor switching element

Country Status (1)

Country Link
JP (1) JPS6445170A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6330012B1 (en) 1998-05-18 2001-12-11 Riso Kagaku Corporation Image forming system

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6330012B1 (en) 1998-05-18 2001-12-11 Riso Kagaku Corporation Image forming system

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