JPS57204116A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS57204116A
JPS57204116A JP9011681A JP9011681A JPS57204116A JP S57204116 A JPS57204116 A JP S57204116A JP 9011681 A JP9011681 A JP 9011681A JP 9011681 A JP9011681 A JP 9011681A JP S57204116 A JPS57204116 A JP S57204116A
Authority
JP
Japan
Prior art keywords
wafers
wax
wafer
semiconductor device
impurity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9011681A
Other languages
Japanese (ja)
Inventor
Kunihiro Nakamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP9011681A priority Critical patent/JPS57204116A/en
Publication of JPS57204116A publication Critical patent/JPS57204116A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To prevent the cracking of wafers, and to improve productivity by stacking the wafers by using an adhesive material containing an impurity and wax and treating the wafers. CONSTITUTION:A PSG layer 12 is formed to the surface of an N type Si wafer 4, a plurality of the wafers are stacked and thermally treated and N<+> type layers 3 are shaped while the wafers are bonded, the wafers are cut at central positions in the thickness direction of the wafers, the impurity is diffused to both surfaces, and elements 13 are formed. These wafers 14 are bonded by the wax, the PSG sections 12 are cut, the wax is thermally melted and the wafer is separated into two wafers, and an electrode is shaped at a predetermined section, thus forming the semiconductor device. Accordingly, the fracture of the wafers is decreased, the wafer with a large diameter can be treated, and productivity is improved.
JP9011681A 1981-06-09 1981-06-09 Manufacture of semiconductor device Pending JPS57204116A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9011681A JPS57204116A (en) 1981-06-09 1981-06-09 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9011681A JPS57204116A (en) 1981-06-09 1981-06-09 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS57204116A true JPS57204116A (en) 1982-12-14

Family

ID=13989539

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9011681A Pending JPS57204116A (en) 1981-06-09 1981-06-09 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS57204116A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5489555A (en) * 1992-04-16 1996-02-06 Semiconductor Energy Laboratory Co., Ltd. Method for forming a photoelectric conversion device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5489555A (en) * 1992-04-16 1996-02-06 Semiconductor Energy Laboratory Co., Ltd. Method for forming a photoelectric conversion device

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