JPS57207382A - High-speed diode - Google Patents
High-speed diodeInfo
- Publication number
- JPS57207382A JPS57207382A JP9248781A JP9248781A JPS57207382A JP S57207382 A JPS57207382 A JP S57207382A JP 9248781 A JP9248781 A JP 9248781A JP 9248781 A JP9248781 A JP 9248781A JP S57207382 A JPS57207382 A JP S57207382A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type
- substrate
- small holes
- temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000011084 recovery Methods 0.000 abstract 5
- 239000000758 substrate Substances 0.000 abstract 3
- 229910015367 Au—Sb Inorganic materials 0.000 abstract 2
- 239000011888 foil Substances 0.000 abstract 2
- 238000010438 heat treatment Methods 0.000 abstract 2
- 229910045601 alloy Inorganic materials 0.000 abstract 1
- 239000000956 alloy Substances 0.000 abstract 1
- 238000005275 alloying Methods 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 239000004615 ingredient Substances 0.000 abstract 1
- 229910000679 solder Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/868—PIN diodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE:To shorten inverse recovery time, and to obtain the diode having a soft-recovery characteristic by forming an N<+> type layer by using Au-Sb foil with a plurality of small holes and making the temperature of heat treatment at the time of alloying a temperature where an alloy is diffused sufficiently to an Ni-layer when a P<+>-Ni-N<+> junction is shaped by employing an N type Si. CONSTITUTION:A P<+> type Si substrate 4 is fixed onto a supporting electrode 7 consisting of W, etc. by using metallic solder 6, the principal ingredient thereof is Al, the Ni type layer 3 is grown onto the substrate, and the layer 3 and the substrate 4 are etched in mesa form. The Au-Sb foil 1, a diameter thereof is approximately the same as the layer 3, the ratio of Au to Sb therein is made 95:5 and to which a large number of the small holes 2 with approximately 1mm. diameters are formed, is placed onto the layer 3, the temperature where Au is diffused sufficiently into the layer 3 is selected, and shallow N<+> type regions 5 corresponding to the small holes 2 are shaped into the layer 3 through heat treatment. Accordingly, a snap-OFF characteristic is generated to an inverse recovery characteristic in an Au diffusing region and the soft-recovery characteristic in a region in which there is no Au diffusion, and the inverse recovery time is shortened.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9248781A JPS57207382A (en) | 1981-06-16 | 1981-06-16 | High-speed diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9248781A JPS57207382A (en) | 1981-06-16 | 1981-06-16 | High-speed diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57207382A true JPS57207382A (en) | 1982-12-20 |
Family
ID=14055654
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9248781A Pending JPS57207382A (en) | 1981-06-16 | 1981-06-16 | High-speed diode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57207382A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3442644A1 (en) * | 1983-11-29 | 1985-06-05 | Mitsubishi Denki K.K., Tokio/Tokyo | Semiconductor component |
-
1981
- 1981-06-16 JP JP9248781A patent/JPS57207382A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3442644A1 (en) * | 1983-11-29 | 1985-06-05 | Mitsubishi Denki K.K., Tokio/Tokyo | Semiconductor component |
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