JPS5524411A - Process of manufacturing semiconductor rectifying device - Google Patents

Process of manufacturing semiconductor rectifying device

Info

Publication number
JPS5524411A
JPS5524411A JP9617278A JP9617278A JPS5524411A JP S5524411 A JPS5524411 A JP S5524411A JP 9617278 A JP9617278 A JP 9617278A JP 9617278 A JP9617278 A JP 9617278A JP S5524411 A JPS5524411 A JP S5524411A
Authority
JP
Japan
Prior art keywords
layer
specific resistance
constitution
substrate
manufacturing semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9617278A
Other languages
Japanese (ja)
Inventor
Yuji Shinno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP9617278A priority Critical patent/JPS5524411A/en
Publication of JPS5524411A publication Critical patent/JPS5524411A/en
Pending legal-status Critical Current

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  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE: To minimize forward voltage drop without decreasing withstanding pressure by providing N type intermediate specific resistance layer by means of a low specific resistance of N++ substrate and preventing self-addition from low specific resistance layer to high specific resistance layer at manufacturing.
CONSTITUTION: N+ layer 33 and N layer 34 are formed epitaxially on N++Si 32. From subjecting P+ poly Si 36 including B then to vapor phase growth, B is diffused from P+ layer 36 and P layer 35 is formed. Next, electrodes 31, 37 of Cr- Ni-Ag are attached onto the layer 36 and the substrate 32, and a main electrode 39 is fixed with Pb-Ag-Sn solder 38. This constitution is thus available to saving the process for manufacture and also to obtaining a diode low in loss without deteriorating withstanding pressure.
COPYRIGHT: (C)1980,JPO&Japio
JP9617278A 1978-08-09 1978-08-09 Process of manufacturing semiconductor rectifying device Pending JPS5524411A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9617278A JPS5524411A (en) 1978-08-09 1978-08-09 Process of manufacturing semiconductor rectifying device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9617278A JPS5524411A (en) 1978-08-09 1978-08-09 Process of manufacturing semiconductor rectifying device

Publications (1)

Publication Number Publication Date
JPS5524411A true JPS5524411A (en) 1980-02-21

Family

ID=14157898

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9617278A Pending JPS5524411A (en) 1978-08-09 1978-08-09 Process of manufacturing semiconductor rectifying device

Country Status (1)

Country Link
JP (1) JPS5524411A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6420648A (en) * 1987-07-15 1989-01-24 Toshiba Corp Semiconductor device and manufacture thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6420648A (en) * 1987-07-15 1989-01-24 Toshiba Corp Semiconductor device and manufacture thereof
JPH0579182B2 (en) * 1987-07-15 1993-11-01 Tokyo Shibaura Electric Co

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