JPS5472955A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5472955A JPS5472955A JP13998577A JP13998577A JPS5472955A JP S5472955 A JPS5472955 A JP S5472955A JP 13998577 A JP13998577 A JP 13998577A JP 13998577 A JP13998577 A JP 13998577A JP S5472955 A JPS5472955 A JP S5472955A
- Authority
- JP
- Japan
- Prior art keywords
- schottky barrier
- barrier diode
- substrate
- forward voltage
- manufacture
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE: To stabilize the forward voltage of a Schottky barrier diode, by forming an aluminum electrode surface which contains silicon on a n-type silicon semiconductor surface.
CONSTITUTION: On the n-tpe silicon semiconductor region surface of smiconductor substrate 1, aluminum electrodes 21 and 22 are formed, which contain silicon, so as to form a Schottky barrier diode; and then, substrate 1 is heated to a high temperature and cooled gradually to control the forward voltage of the Schottky barrier diode, thereby removing its dispersion.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13998577A JPS5472955A (en) | 1977-11-24 | 1977-11-24 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13998577A JPS5472955A (en) | 1977-11-24 | 1977-11-24 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5472955A true JPS5472955A (en) | 1979-06-11 |
Family
ID=15258248
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13998577A Pending JPS5472955A (en) | 1977-11-24 | 1977-11-24 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5472955A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01138755A (en) * | 1987-08-28 | 1989-05-31 | Fujitsu Ltd | Semiconductor device |
JP2018046250A (en) * | 2016-09-16 | 2018-03-22 | トヨタ自動車株式会社 | Manufacturing method for diode |
-
1977
- 1977-11-24 JP JP13998577A patent/JPS5472955A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01138755A (en) * | 1987-08-28 | 1989-05-31 | Fujitsu Ltd | Semiconductor device |
JP2018046250A (en) * | 2016-09-16 | 2018-03-22 | トヨタ自動車株式会社 | Manufacturing method for diode |
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