JPS5472955A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5472955A
JPS5472955A JP13998577A JP13998577A JPS5472955A JP S5472955 A JPS5472955 A JP S5472955A JP 13998577 A JP13998577 A JP 13998577A JP 13998577 A JP13998577 A JP 13998577A JP S5472955 A JPS5472955 A JP S5472955A
Authority
JP
Japan
Prior art keywords
schottky barrier
barrier diode
substrate
forward voltage
manufacture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13998577A
Other languages
Japanese (ja)
Inventor
Masayuki Sato
Kensuke Nakada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP13998577A priority Critical patent/JPS5472955A/en
Publication of JPS5472955A publication Critical patent/JPS5472955A/en
Pending legal-status Critical Current

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  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE: To stabilize the forward voltage of a Schottky barrier diode, by forming an aluminum electrode surface which contains silicon on a n-type silicon semiconductor surface.
CONSTITUTION: On the n-tpe silicon semiconductor region surface of smiconductor substrate 1, aluminum electrodes 21 and 22 are formed, which contain silicon, so as to form a Schottky barrier diode; and then, substrate 1 is heated to a high temperature and cooled gradually to control the forward voltage of the Schottky barrier diode, thereby removing its dispersion.
COPYRIGHT: (C)1979,JPO&Japio
JP13998577A 1977-11-24 1977-11-24 Manufacture of semiconductor device Pending JPS5472955A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13998577A JPS5472955A (en) 1977-11-24 1977-11-24 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13998577A JPS5472955A (en) 1977-11-24 1977-11-24 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5472955A true JPS5472955A (en) 1979-06-11

Family

ID=15258248

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13998577A Pending JPS5472955A (en) 1977-11-24 1977-11-24 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5472955A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01138755A (en) * 1987-08-28 1989-05-31 Fujitsu Ltd Semiconductor device
JP2018046250A (en) * 2016-09-16 2018-03-22 トヨタ自動車株式会社 Manufacturing method for diode

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01138755A (en) * 1987-08-28 1989-05-31 Fujitsu Ltd Semiconductor device
JP2018046250A (en) * 2016-09-16 2018-03-22 トヨタ自動車株式会社 Manufacturing method for diode

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