JPS6444045A - Wiring structure of semiconductor device - Google Patents
Wiring structure of semiconductor deviceInfo
- Publication number
- JPS6444045A JPS6444045A JP20109287A JP20109287A JPS6444045A JP S6444045 A JPS6444045 A JP S6444045A JP 20109287 A JP20109287 A JP 20109287A JP 20109287 A JP20109287 A JP 20109287A JP S6444045 A JPS6444045 A JP S6444045A
- Authority
- JP
- Japan
- Prior art keywords
- film
- approx
- thick
- electromigration resistance
- excellent electromigration
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:To obtain a structure having excellent electromigration resistance by covering the bottom of a main wiring material with a different type of conductive film having excellent electromigration resistance, and covering the side face and the upper face with an insulating film which contains main ingredients of the essential wiring material as constituents. CONSTITUTION:A titanium-tungsten alloy film 5 is formed by a sputtering method approx. 2000Angstrom thick on an interlayer insulating film 4, and an aluminum film 6 is further formed approx. 1mum thick by a sputtering method. Then, the films 6, 5 are patterned by a normal photoresist step to form it in a predetermined wiring shape, and a resist is then removed. Thereafter, it is dipped in water at approx. 60-100 deg.C to form an aluminum hydroxide film 7 on the film 6 approx. 2000Angstrom thick. Thus. a wiring structure having excellent electromigration resistance can be obtained.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62201092A JPH06103694B2 (en) | 1987-08-11 | 1987-08-11 | Wiring structure of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62201092A JPH06103694B2 (en) | 1987-08-11 | 1987-08-11 | Wiring structure of semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6444045A true JPS6444045A (en) | 1989-02-16 |
JPH06103694B2 JPH06103694B2 (en) | 1994-12-14 |
Family
ID=16435263
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62201092A Expired - Lifetime JPH06103694B2 (en) | 1987-08-11 | 1987-08-11 | Wiring structure of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH06103694B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05182969A (en) * | 1992-01-06 | 1993-07-23 | Nec Yamagata Ltd | Semiconductor device |
-
1987
- 1987-08-11 JP JP62201092A patent/JPH06103694B2/en not_active Expired - Lifetime
Non-Patent Citations (1)
Title |
---|
APPLIED PHYSICS LETTERS=1976 * |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05182969A (en) * | 1992-01-06 | 1993-07-23 | Nec Yamagata Ltd | Semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
JPH06103694B2 (en) | 1994-12-14 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP0177105A3 (en) | Method for providing a semiconductor device with planarized contacts | |
JPS6444045A (en) | Wiring structure of semiconductor device | |
JPS52143785A (en) | Semiconductor device | |
JPS5258491A (en) | Semiconductor device | |
JPS5397789A (en) | Semiconductor device | |
JPS55113344A (en) | Electrode wiring and its manufacture | |
JPS5750451A (en) | Semiconductor | |
JPS5368970A (en) | Solder electrode structure | |
JPS5690536A (en) | Semiconductor device | |
JPS52155986A (en) | Semiconductor device | |
JPS645038A (en) | Semiconductor device | |
JPS5562737A (en) | Wiring method for semiconductor element | |
JPS64747A (en) | Manufacture of semiconductor device | |
JPS57206049A (en) | Manufacture of semiconductor device | |
JPS5538018A (en) | Multi-layer wiring structure | |
JPS6437037A (en) | Manufacture of semiconductor device | |
JPS55125647A (en) | Semiconductor device and production of the same | |
JPS5432269A (en) | Manufacture for semiconductor device | |
JPS6436051A (en) | Wiring structure | |
JPS52151567A (en) | Protecting method of wiring layers | |
JPS644056A (en) | Semiconductor device | |
JPS57181143A (en) | Manufacture of semiconductor device | |
JPS558012A (en) | Semi-conductor device | |
JPS52131456A (en) | Forming method of electrode | |
JPS57114280A (en) | Mis type semiconductor device and manufacture thereof |