JPS5562737A - Wiring method for semiconductor element - Google Patents
Wiring method for semiconductor elementInfo
- Publication number
- JPS5562737A JPS5562737A JP13451478A JP13451478A JPS5562737A JP S5562737 A JPS5562737 A JP S5562737A JP 13451478 A JP13451478 A JP 13451478A JP 13451478 A JP13451478 A JP 13451478A JP S5562737 A JPS5562737 A JP S5562737A
- Authority
- JP
- Japan
- Prior art keywords
- etching
- aluminum
- substrate
- circuit
- etched
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Manufacturing Of Printed Circuit Boards (AREA)
- Weting (AREA)
Abstract
PURPOSE: To perform the etching just properly by dipping the substrate with conductive layer to be etched and the opposite electrode in the etching vessel and by monitoring the current and quantity of electricity that flow between the two.
CONSTITUTION: The substrate to be etched, on which aluminum is evaporated and partially covered with resist, is suspended by an aluminum wire 3 through a resin- made holder 4 in the vessel 1 filled with etchants 8 that etches aluminum, a platinum wire 5 is made opposite to said substrate 2. Next, both wires are connected to the amplifier 10 combined with the resistance 6 in parallel through the contact 12 of reed relay, the amplifier is connected to the reference current setting circuit 13, circuit 14 for setting the initial thickness of aluminum on the substrate, supplement etching setting circuit 15, circuit 16 for measuring the quantity of electricity and processor 17 in parallel. Also a etching current storing circuit 18, timer 19 and buzzer 20 are connected to the processor 17, a good wiring pattern can be obtained on regulating the treatment time while etching aluminum.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13451478A JPS5562737A (en) | 1978-11-02 | 1978-11-02 | Wiring method for semiconductor element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13451478A JPS5562737A (en) | 1978-11-02 | 1978-11-02 | Wiring method for semiconductor element |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5562737A true JPS5562737A (en) | 1980-05-12 |
Family
ID=15130099
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13451478A Pending JPS5562737A (en) | 1978-11-02 | 1978-11-02 | Wiring method for semiconductor element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5562737A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58141531A (en) * | 1982-02-18 | 1983-08-22 | Toshiba Corp | Semiconductor element metal thin film etching apparatus |
US5273610A (en) * | 1992-06-23 | 1993-12-28 | Association Institutions For Material Sciences, Inc. | Apparatus and method for determining power in plasma processing |
-
1978
- 1978-11-02 JP JP13451478A patent/JPS5562737A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58141531A (en) * | 1982-02-18 | 1983-08-22 | Toshiba Corp | Semiconductor element metal thin film etching apparatus |
JPH0316776B2 (en) * | 1982-02-18 | 1991-03-06 | Tokyo Shibaura Electric Co | |
US5273610A (en) * | 1992-06-23 | 1993-12-28 | Association Institutions For Material Sciences, Inc. | Apparatus and method for determining power in plasma processing |
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