JPS5562737A - Wiring method for semiconductor element - Google Patents

Wiring method for semiconductor element

Info

Publication number
JPS5562737A
JPS5562737A JP13451478A JP13451478A JPS5562737A JP S5562737 A JPS5562737 A JP S5562737A JP 13451478 A JP13451478 A JP 13451478A JP 13451478 A JP13451478 A JP 13451478A JP S5562737 A JPS5562737 A JP S5562737A
Authority
JP
Japan
Prior art keywords
etching
aluminum
substrate
circuit
etched
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13451478A
Other languages
Japanese (ja)
Inventor
Kunihiko Kanda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to JP13451478A priority Critical patent/JPS5562737A/en
Publication of JPS5562737A publication Critical patent/JPS5562737A/en
Pending legal-status Critical Current

Links

Landscapes

  • Manufacturing Of Printed Circuit Boards (AREA)
  • Weting (AREA)

Abstract

PURPOSE: To perform the etching just properly by dipping the substrate with conductive layer to be etched and the opposite electrode in the etching vessel and by monitoring the current and quantity of electricity that flow between the two.
CONSTITUTION: The substrate to be etched, on which aluminum is evaporated and partially covered with resist, is suspended by an aluminum wire 3 through a resin- made holder 4 in the vessel 1 filled with etchants 8 that etches aluminum, a platinum wire 5 is made opposite to said substrate 2. Next, both wires are connected to the amplifier 10 combined with the resistance 6 in parallel through the contact 12 of reed relay, the amplifier is connected to the reference current setting circuit 13, circuit 14 for setting the initial thickness of aluminum on the substrate, supplement etching setting circuit 15, circuit 16 for measuring the quantity of electricity and processor 17 in parallel. Also a etching current storing circuit 18, timer 19 and buzzer 20 are connected to the processor 17, a good wiring pattern can be obtained on regulating the treatment time while etching aluminum.
COPYRIGHT: (C)1980,JPO&Japio
JP13451478A 1978-11-02 1978-11-02 Wiring method for semiconductor element Pending JPS5562737A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13451478A JPS5562737A (en) 1978-11-02 1978-11-02 Wiring method for semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13451478A JPS5562737A (en) 1978-11-02 1978-11-02 Wiring method for semiconductor element

Publications (1)

Publication Number Publication Date
JPS5562737A true JPS5562737A (en) 1980-05-12

Family

ID=15130099

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13451478A Pending JPS5562737A (en) 1978-11-02 1978-11-02 Wiring method for semiconductor element

Country Status (1)

Country Link
JP (1) JPS5562737A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58141531A (en) * 1982-02-18 1983-08-22 Toshiba Corp Semiconductor element metal thin film etching apparatus
US5273610A (en) * 1992-06-23 1993-12-28 Association Institutions For Material Sciences, Inc. Apparatus and method for determining power in plasma processing

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58141531A (en) * 1982-02-18 1983-08-22 Toshiba Corp Semiconductor element metal thin film etching apparatus
JPH0316776B2 (en) * 1982-02-18 1991-03-06 Tokyo Shibaura Electric Co
US5273610A (en) * 1992-06-23 1993-12-28 Association Institutions For Material Sciences, Inc. Apparatus and method for determining power in plasma processing

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