JPS5546568A - Method of fabricating semicondcuctor device - Google Patents

Method of fabricating semicondcuctor device

Info

Publication number
JPS5546568A
JPS5546568A JP12070978A JP12070978A JPS5546568A JP S5546568 A JPS5546568 A JP S5546568A JP 12070978 A JP12070978 A JP 12070978A JP 12070978 A JP12070978 A JP 12070978A JP S5546568 A JPS5546568 A JP S5546568A
Authority
JP
Japan
Prior art keywords
etching
alumina
etched
liquid
occurs
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12070978A
Other languages
Japanese (ja)
Inventor
Iwao Higashinakagaha
Shohei Shima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI, CHO LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP12070978A priority Critical patent/JPS5546568A/en
Publication of JPS5546568A publication Critical patent/JPS5546568A/en
Pending legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Weting (AREA)

Abstract

PURPOSE: To perforate a fine hole at an insulating film without ouver-etching by determining etching end time from electrochenical reaction of specimen in etching liquid.
CONSTITUTION: A dummy specimen 10 and a platinum film 11 are contained in a tank 12 filled with NH4F liquid. A semiconductor device 13 selectively coated with resist on an insulating film 8 is selectively etched at the film 8. Then, nonporous alumina 7 is etched in phosphoric acid and chromic acid mixture. No change occurs at a voltmeter 14 while the alumina 7 is coated on an aluminum wire 5 at the dummy specimen 10, but when the alumina 7 is etched to make the aluminum wire 5 contact with the etching liquid, there occurs an electrode reaction to generate voltage at the voltmeter 14. When this occurs, it is decided as an end of etching. After predetermined time is elapsed from this end, the device 13 is removed from the etching liquid to thereby finish the etching to thus form a fine hole 9 thereat. Thus, the device can be exactly and accurately stopped etching.
COPYRIGHT: (C)1980,JPO&Japio
JP12070978A 1978-09-30 1978-09-30 Method of fabricating semicondcuctor device Pending JPS5546568A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12070978A JPS5546568A (en) 1978-09-30 1978-09-30 Method of fabricating semicondcuctor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12070978A JPS5546568A (en) 1978-09-30 1978-09-30 Method of fabricating semicondcuctor device

Publications (1)

Publication Number Publication Date
JPS5546568A true JPS5546568A (en) 1980-04-01

Family

ID=14793041

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12070978A Pending JPS5546568A (en) 1978-09-30 1978-09-30 Method of fabricating semicondcuctor device

Country Status (1)

Country Link
JP (1) JPS5546568A (en)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4338157A (en) * 1979-10-12 1982-07-06 Sigma Corporation Method for forming electrical connecting lines by monitoring the etch rate during wet etching
JPS5863546U (en) * 1981-10-26 1983-04-28 株式会社日本公害防止技術センタ− Wind direction-specific collection device for suspended particulate matter in the air
JPS58136751U (en) * 1982-03-09 1983-09-14 株式会社　日本公害防止技術センタ− Collection control device for suspended particulate matter in the air
US5338390A (en) * 1992-12-04 1994-08-16 International Business Machines Corporation Contactless real-time in-situ monitoring of a chemical etching process
US5445705A (en) * 1994-06-30 1995-08-29 International Business Machines Corporation Method and apparatus for contactless real-time in-situ monitoring of a chemical etching process
US5451289A (en) * 1994-06-30 1995-09-19 International Business Machines Corporation Fixture for in-situ noncontact monitoring of wet chemical etching with passive wafer restraint
US5480511A (en) * 1994-06-30 1996-01-02 International Business Machines Corporation Method for contactless real-time in-situ monitoring of a chemical etching process
US5489361A (en) * 1994-06-30 1996-02-06 International Business Machines Corporation Measuring film etching uniformity during a chemical etching process
US5500073A (en) * 1994-06-30 1996-03-19 International Business Machines Corporation Real time measurement of etch rate during a chemical etching process
US5501766A (en) * 1994-06-30 1996-03-26 International Business Machines Corporation Minimizing overetch during a chemical etching process
US5573624A (en) * 1992-12-04 1996-11-12 International Business Machines Corporation Chemical etch monitor for measuring film etching uniformity during a chemical etching process
US5788801A (en) * 1992-12-04 1998-08-04 International Business Machines Corporation Real time measurement of etch rate during a chemical etching process

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4338157A (en) * 1979-10-12 1982-07-06 Sigma Corporation Method for forming electrical connecting lines by monitoring the etch rate during wet etching
JPS5863546U (en) * 1981-10-26 1983-04-28 株式会社日本公害防止技術センタ− Wind direction-specific collection device for suspended particulate matter in the air
JPS6326761Y2 (en) * 1981-10-26 1988-07-20
JPS58136751U (en) * 1982-03-09 1983-09-14 株式会社　日本公害防止技術センタ− Collection control device for suspended particulate matter in the air
JPS6349710Y2 (en) * 1982-03-09 1988-12-21
US5573624A (en) * 1992-12-04 1996-11-12 International Business Machines Corporation Chemical etch monitor for measuring film etching uniformity during a chemical etching process
US5338390A (en) * 1992-12-04 1994-08-16 International Business Machines Corporation Contactless real-time in-situ monitoring of a chemical etching process
US5788801A (en) * 1992-12-04 1998-08-04 International Business Machines Corporation Real time measurement of etch rate during a chemical etching process
US5582746A (en) * 1992-12-04 1996-12-10 International Business Machines Corporation Real time measurement of etch rate during a chemical etching process
US5456788A (en) * 1994-06-30 1995-10-10 International Business Machines Corporation Method and apparatus for contactless real-time in-situ monitoring of a chemical etching process
US5489361A (en) * 1994-06-30 1996-02-06 International Business Machines Corporation Measuring film etching uniformity during a chemical etching process
US5500073A (en) * 1994-06-30 1996-03-19 International Business Machines Corporation Real time measurement of etch rate during a chemical etching process
US5501766A (en) * 1994-06-30 1996-03-26 International Business Machines Corporation Minimizing overetch during a chemical etching process
US5573623A (en) * 1994-06-30 1996-11-12 International Business Machines Corporation Apparatus for contactless real-time in-situ monitoring of a chemical etching process
US5480511A (en) * 1994-06-30 1996-01-02 International Business Machines Corporation Method for contactless real-time in-situ monitoring of a chemical etching process
US5451289A (en) * 1994-06-30 1995-09-19 International Business Machines Corporation Fixture for in-situ noncontact monitoring of wet chemical etching with passive wafer restraint
US5445705A (en) * 1994-06-30 1995-08-29 International Business Machines Corporation Method and apparatus for contactless real-time in-situ monitoring of a chemical etching process

Similar Documents

Publication Publication Date Title
JPS5546568A (en) Method of fabricating semicondcuctor device
JPS5687666A (en) Plasma etching method
JPS5432070A (en) Etching process method for semiconductor element
JPS5523437A (en) Manufacture of prove unit for semiconductor wafer test
JPS55125632A (en) Etching
JPS52149076A (en) Semiconductor integrated circuit and its preparing method
JPS556429A (en) Selective ethching method
JPS57155381A (en) Wet etching method
JPS5694770A (en) Transistor
JPS5496363A (en) Electrode forming method for semiconductor device
JPS52122479A (en) Etching solution of silicon
JPS56126460A (en) Nozzle plate for liquid injection
JPS6056799B2 (en) Method of forming patterned copper layer
JPS54158870A (en) Etching method
JPS5539627A (en) Automatic device for measuring specific resistance distribution of semiconductor
JPS6424423A (en) Manufacture of semiconductor device
JPS57111023A (en) Etching method for integrated circuit
JPS5642346A (en) Manufacture of semiconductor device
JPS5444871A (en) Selective working method for metal layer composed of or containing cr applied onto semiconductor surface
JPS56144555A (en) Manufacture of semiconductor device
JPS5562737A (en) Wiring method for semiconductor element
JPS5660034A (en) Manufacture of semiconductor device
JPH0144014B2 (en)
JPS57124443A (en) Forming method for electrode layer
JPS54137975A (en) Etching method of silicon substrate