JPS54137975A - Etching method of silicon substrate - Google Patents

Etching method of silicon substrate

Info

Publication number
JPS54137975A
JPS54137975A JP4631878A JP4631878A JPS54137975A JP S54137975 A JPS54137975 A JP S54137975A JP 4631878 A JP4631878 A JP 4631878A JP 4631878 A JP4631878 A JP 4631878A JP S54137975 A JPS54137975 A JP S54137975A
Authority
JP
Japan
Prior art keywords
solution
etching
acid
substrate
ratio
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4631878A
Other languages
Japanese (ja)
Other versions
JPS5711508B2 (en
Inventor
Kazuo Fujii
Takashi Tomioka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP4631878A priority Critical patent/JPS54137975A/en
Publication of JPS54137975A publication Critical patent/JPS54137975A/en
Publication of JPS5711508B2 publication Critical patent/JPS5711508B2/ja
Granted legal-status Critical Current

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  • Weting (AREA)

Abstract

PURPOSE: To make unevenness small with uniform thickness by etching a Si substrate by selectively using two kinds of mixed solution of hydro fluoric acid, nitric acid and acetic acid different in mixing ratio.
CONSTITUTION: The 1st solution obtained mixing hydro fluoric acid of 46% in density with nitric acid of 62% at a ratio of 1:4 and the 2nd solution by mixing hydro fluoric acid of 46%, nitric acid of 62%, and acetic acid together at a ratio of 20:1:2 are both used. The substrate is cleaned by etching in a short time using the 2nd solution and the 1st solution in order and then etched by the 2nd solution for a long time to the fixed depth. Acetic acid in the 2nd solution suppresses partial etching, the unevenness of the Si surface after etching is extremely small, and the thickness of the Si substrate becomes uniform. Next, a process using the 1st solution is performed in a short time to remove a stain film on the surface, thereby completing the substrate. With the mixing ratio of the 1st solution set to more than 1:0, pre-processing effect decreases and with the mixing ratio of hydro fluoric acid and nitric acid below 10:1, it is difficult to control etching, so that it should be more than 10:1.
COPYRIGHT: (C)1979,JPO&Japio
JP4631878A 1978-04-18 1978-04-18 Etching method of silicon substrate Granted JPS54137975A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4631878A JPS54137975A (en) 1978-04-18 1978-04-18 Etching method of silicon substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4631878A JPS54137975A (en) 1978-04-18 1978-04-18 Etching method of silicon substrate

Publications (2)

Publication Number Publication Date
JPS54137975A true JPS54137975A (en) 1979-10-26
JPS5711508B2 JPS5711508B2 (en) 1982-03-04

Family

ID=12743806

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4631878A Granted JPS54137975A (en) 1978-04-18 1978-04-18 Etching method of silicon substrate

Country Status (1)

Country Link
JP (1) JPS54137975A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017047625A1 (en) * 2015-09-16 2017-03-23 東京エレクトロン株式会社 Substrate processing method, substrate processing device, and storage medium

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017047625A1 (en) * 2015-09-16 2017-03-23 東京エレクトロン株式会社 Substrate processing method, substrate processing device, and storage medium
JP2017059676A (en) * 2015-09-16 2017-03-23 東京エレクトロン株式会社 Substrate processing method, substrate processing apparatus and storage medium
US10403518B2 (en) 2015-09-16 2019-09-03 Tokyo Electron Limited Substrate processing method, substrate processing apparatus and recording medium

Also Published As

Publication number Publication date
JPS5711508B2 (en) 1982-03-04

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