JPS54157079A - Crystal surface production method of non-disturbance mirror surface - Google Patents
Crystal surface production method of non-disturbance mirror surfaceInfo
- Publication number
- JPS54157079A JPS54157079A JP6607578A JP6607578A JPS54157079A JP S54157079 A JPS54157079 A JP S54157079A JP 6607578 A JP6607578 A JP 6607578A JP 6607578 A JP6607578 A JP 6607578A JP S54157079 A JPS54157079 A JP S54157079A
- Authority
- JP
- Japan
- Prior art keywords
- polishing
- materials
- crystal
- corpuscules
- vol
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Weting (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
PURPOSE: To obtain a clear crystal surface by etching the polished surface and removing polishing materials after Si crystal is polished by polishing materials including SiO2 corpuscules and oxidizing materials.
CONSTITUTION: Oxidizing materials such as H2O2 are added to polishing materials where SiO2 corpuscules (a density of approximately 5 weight %) are suspended in alkaline solution, and Si crystal is polished by obtained materials. The surface of crystal 1 includes SiO2 corpuscules 2' and reaction products 3' in oxide film 4 just after polishing with polishing materials. This oxide film has a hydrophilic property, and the surface shows a uniformly wetted phenomenon just after polishing. Then, succeeding processings are very simple, and polishing materials and oxidizing materials can be removed easily. An oxidizing materials addition quantity of 0.001 to 0.1 Vol % is effective, and the polishing effect is small for the addition quantity below 0.001 Vol %, and the polishing speed is lowered for the addition quantity over 0.1 Vol%.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6607578A JPS54157079A (en) | 1978-06-01 | 1978-06-01 | Crystal surface production method of non-disturbance mirror surface |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6607578A JPS54157079A (en) | 1978-06-01 | 1978-06-01 | Crystal surface production method of non-disturbance mirror surface |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS54157079A true JPS54157079A (en) | 1979-12-11 |
JPS5710566B2 JPS5710566B2 (en) | 1982-02-26 |
Family
ID=13305356
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6607578A Granted JPS54157079A (en) | 1978-06-01 | 1978-06-01 | Crystal surface production method of non-disturbance mirror surface |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54157079A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0817831A (en) * | 1985-10-28 | 1996-01-19 | Internatl Business Mach Corp <Ibm> | Formation method of metal layer and silicon dioxide layer inidentical flat face |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100400234C (en) * | 2006-04-19 | 2008-07-09 | 山东大学 | Surface polishing method for major diameter high hardness 6H-SiC monocrystalline sheet |
-
1978
- 1978-06-01 JP JP6607578A patent/JPS54157079A/en active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0817831A (en) * | 1985-10-28 | 1996-01-19 | Internatl Business Mach Corp <Ibm> | Formation method of metal layer and silicon dioxide layer inidentical flat face |
Also Published As
Publication number | Publication date |
---|---|
JPS5710566B2 (en) | 1982-02-26 |
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