JPS54157079A - Crystal surface production method of non-disturbance mirror surface - Google Patents

Crystal surface production method of non-disturbance mirror surface

Info

Publication number
JPS54157079A
JPS54157079A JP6607578A JP6607578A JPS54157079A JP S54157079 A JPS54157079 A JP S54157079A JP 6607578 A JP6607578 A JP 6607578A JP 6607578 A JP6607578 A JP 6607578A JP S54157079 A JPS54157079 A JP S54157079A
Authority
JP
Japan
Prior art keywords
polishing
materials
crystal
corpuscules
vol
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6607578A
Other languages
Japanese (ja)
Other versions
JPS5710566B2 (en
Inventor
Toshiro Karaki
Yoshiyuki Ishikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP6607578A priority Critical patent/JPS54157079A/en
Publication of JPS54157079A publication Critical patent/JPS54157079A/en
Publication of JPS5710566B2 publication Critical patent/JPS5710566B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Weting (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

PURPOSE: To obtain a clear crystal surface by etching the polished surface and removing polishing materials after Si crystal is polished by polishing materials including SiO2 corpuscules and oxidizing materials.
CONSTITUTION: Oxidizing materials such as H2O2 are added to polishing materials where SiO2 corpuscules (a density of approximately 5 weight %) are suspended in alkaline solution, and Si crystal is polished by obtained materials. The surface of crystal 1 includes SiO2 corpuscules 2' and reaction products 3' in oxide film 4 just after polishing with polishing materials. This oxide film has a hydrophilic property, and the surface shows a uniformly wetted phenomenon just after polishing. Then, succeeding processings are very simple, and polishing materials and oxidizing materials can be removed easily. An oxidizing materials addition quantity of 0.001 to 0.1 Vol % is effective, and the polishing effect is small for the addition quantity below 0.001 Vol %, and the polishing speed is lowered for the addition quantity over 0.1 Vol%.
COPYRIGHT: (C)1979,JPO&Japio
JP6607578A 1978-06-01 1978-06-01 Crystal surface production method of non-disturbance mirror surface Granted JPS54157079A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6607578A JPS54157079A (en) 1978-06-01 1978-06-01 Crystal surface production method of non-disturbance mirror surface

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6607578A JPS54157079A (en) 1978-06-01 1978-06-01 Crystal surface production method of non-disturbance mirror surface

Publications (2)

Publication Number Publication Date
JPS54157079A true JPS54157079A (en) 1979-12-11
JPS5710566B2 JPS5710566B2 (en) 1982-02-26

Family

ID=13305356

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6607578A Granted JPS54157079A (en) 1978-06-01 1978-06-01 Crystal surface production method of non-disturbance mirror surface

Country Status (1)

Country Link
JP (1) JPS54157079A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0817831A (en) * 1985-10-28 1996-01-19 Internatl Business Mach Corp <Ibm> Formation method of metal layer and silicon dioxide layer inidentical flat face

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100400234C (en) * 2006-04-19 2008-07-09 山东大学 Surface polishing method for major diameter high hardness 6H-SiC monocrystalline sheet

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0817831A (en) * 1985-10-28 1996-01-19 Internatl Business Mach Corp <Ibm> Formation method of metal layer and silicon dioxide layer inidentical flat face

Also Published As

Publication number Publication date
JPS5710566B2 (en) 1982-02-26

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