JPS5516413A - Production of semiconductor device - Google Patents
Production of semiconductor deviceInfo
- Publication number
- JPS5516413A JPS5516413A JP8842878A JP8842878A JPS5516413A JP S5516413 A JPS5516413 A JP S5516413A JP 8842878 A JP8842878 A JP 8842878A JP 8842878 A JP8842878 A JP 8842878A JP S5516413 A JPS5516413 A JP S5516413A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- sin film
- oxide layer
- film
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Local Oxidation Of Silicon (AREA)
- Element Separation (AREA)
Abstract
PURPOSE: To prevent the formation of defects in a substrate and at the same time, to reduce the intrusion of a selective oxide layer into a lower portion of a mask by inserting a polycrystalline or non-crystalline film made up of the same material as that constituting a substrate as a buffer layer between a mask layer for selective oxidation and a semiconductor substrate.
CONSTITUTION: (a) Polycrystalline or non-crystalline Si 12 is deposited on a surface 11a of (100) crystal face P-type Si substrate 11 and then a SiN film 13 is deposited thereon. (b) Part of the SiN film is removed by use of a resist film 14 and at the areas of the substrate where the SiN film has been partly removed, B is ion-introduced in the surface of the substrate to prevent conversion in the field region (15A). (c) After the removal of the resist film, the SiN film 13A is masked and selectively oxidized to form an oxide layer 16. Under the field oxide layer 16, impurities in the ion-introduced region 15 are re-distributed, forming a p+-type reversion-preventing region 15.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8842878A JPS5516413A (en) | 1978-07-21 | 1978-07-21 | Production of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8842878A JPS5516413A (en) | 1978-07-21 | 1978-07-21 | Production of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5516413A true JPS5516413A (en) | 1980-02-05 |
Family
ID=13942505
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8842878A Pending JPS5516413A (en) | 1978-07-21 | 1978-07-21 | Production of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5516413A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05226466A (en) * | 1992-02-10 | 1993-09-03 | Nec Corp | Manufacture of semiconductor device |
-
1978
- 1978-07-21 JP JP8842878A patent/JPS5516413A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05226466A (en) * | 1992-02-10 | 1993-09-03 | Nec Corp | Manufacture of semiconductor device |
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