JPS5762533A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5762533A
JPS5762533A JP13830980A JP13830980A JPS5762533A JP S5762533 A JPS5762533 A JP S5762533A JP 13830980 A JP13830980 A JP 13830980A JP 13830980 A JP13830980 A JP 13830980A JP S5762533 A JPS5762533 A JP S5762533A
Authority
JP
Japan
Prior art keywords
etching
voltage
change
monitoring
end point
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13830980A
Other languages
Japanese (ja)
Inventor
Michio Yamada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP13830980A priority Critical patent/JPS5762533A/en
Publication of JPS5762533A publication Critical patent/JPS5762533A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Weting (AREA)

Abstract

PURPOSE:To detect the change of an etching condition and an end point of etching easily, and to improve the reliability of etching treatment by monitoring the voltage between one surface of a semiconductor substrate and a reference electrode immersed opposing to the other surface. CONSTITUTION:Voltage between one surface 51 of the substrate 31 and the reference electrode 90 mounted opposing to the other surface 41 is monitored by means of a voltmeter 80. Since the voltage suddenly changes with the change of the etching condition according to a graph indicating the relationship of the immersion time of an etching liquid and the voltage at the time of etching after forming an insulating film 72 in PSG onto a metallic layer 71 in Al, the change of the etching condition can easily be grasped when monitoring the voltage. Accordingly, the end point of etching can easily be detected, and etching having high reliability can be conducted.
JP13830980A 1980-10-03 1980-10-03 Manufacture of semiconductor device Pending JPS5762533A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13830980A JPS5762533A (en) 1980-10-03 1980-10-03 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13830980A JPS5762533A (en) 1980-10-03 1980-10-03 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5762533A true JPS5762533A (en) 1982-04-15

Family

ID=15218861

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13830980A Pending JPS5762533A (en) 1980-10-03 1980-10-03 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5762533A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103187398A (en) * 2011-12-30 2013-07-03 中芯国际集成电路制造(上海)有限公司 Silicon through hole detection structure and detection method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103187398A (en) * 2011-12-30 2013-07-03 中芯国际集成电路制造(上海)有限公司 Silicon through hole detection structure and detection method

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