JPS5683936A - Production of semiconductor device - Google Patents

Production of semiconductor device

Info

Publication number
JPS5683936A
JPS5683936A JP16222479A JP16222479A JPS5683936A JP S5683936 A JPS5683936 A JP S5683936A JP 16222479 A JP16222479 A JP 16222479A JP 16222479 A JP16222479 A JP 16222479A JP S5683936 A JPS5683936 A JP S5683936A
Authority
JP
Japan
Prior art keywords
thickness
plated
diameter
estimating
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16222479A
Other languages
Japanese (ja)
Other versions
JPS623573B2 (en
Inventor
Aiichiro Nara
Masao Sumiyoshi
Takuji Shimanoe
Takashi Ishii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP16222479A priority Critical patent/JPS5683936A/en
Publication of JPS5683936A publication Critical patent/JPS5683936A/en
Publication of JPS623573B2 publication Critical patent/JPS623573B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition

Abstract

PURPOSE:To obtain a plated layer on a conductor substrate by estimating the thickness of an insulating film observing the plated surface of a monitoring opening. CONSTITUTION:A hole 3 of a diameter D is made in an insulating film 2 on a semiconductor substrate 1 and plated. This allows one to observe a concentric circle whose diameter (d) gradually reduces with an increase in the thickness thereby enabling the estimating of the thickness in a nondestructive manner. When the thickness of a plated film ranges from several thousand Angstrom -1mum, a highly accurate estimation can be done up to a circular hole diameter 4-6mum while the relationship between d/D and the thickness varies slightly yet evenly. Such a very simple method enables formation of a plated film on a substrate 1 at a required opening with the thickness the same as that of the monitoring plated film.
JP16222479A 1979-12-13 1979-12-13 Production of semiconductor device Granted JPS5683936A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16222479A JPS5683936A (en) 1979-12-13 1979-12-13 Production of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16222479A JPS5683936A (en) 1979-12-13 1979-12-13 Production of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5683936A true JPS5683936A (en) 1981-07-08
JPS623573B2 JPS623573B2 (en) 1987-01-26

Family

ID=15750321

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16222479A Granted JPS5683936A (en) 1979-12-13 1979-12-13 Production of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5683936A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7875468B2 (en) 2008-06-17 2011-01-25 Renesas Electronics Corporation Body to be plated, method of determining plated film thickness, and method of manufacturing semiconductor device

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0686667B2 (en) * 1985-11-08 1994-11-02 株式会社日本ダクロシヤムロツク Metal surface treatment method
JPS63293172A (en) * 1987-05-26 1988-11-30 Zojirushi Chain Block Kk Production of steel chain having superior corrosion and wear resistances and lubricity
DE4111701A1 (en) * 1991-04-10 1992-10-15 Itw Befestigungssysteme METHOD FOR COATING CORROSION PROTECTION OF STEEL WORKPIECES

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52144336A (en) * 1976-05-28 1977-12-01 Nippon Telegraph & Telephone Plating amount controlling method and method of fabricating detecting electrode in said method

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52144336A (en) * 1976-05-28 1977-12-01 Nippon Telegraph & Telephone Plating amount controlling method and method of fabricating detecting electrode in said method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7875468B2 (en) 2008-06-17 2011-01-25 Renesas Electronics Corporation Body to be plated, method of determining plated film thickness, and method of manufacturing semiconductor device

Also Published As

Publication number Publication date
JPS623573B2 (en) 1987-01-26

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