JPS55125647A - Semiconductor device and production of the same - Google Patents

Semiconductor device and production of the same

Info

Publication number
JPS55125647A
JPS55125647A JP3311979A JP3311979A JPS55125647A JP S55125647 A JPS55125647 A JP S55125647A JP 3311979 A JP3311979 A JP 3311979A JP 3311979 A JP3311979 A JP 3311979A JP S55125647 A JPS55125647 A JP S55125647A
Authority
JP
Japan
Prior art keywords
layer
wiring structure
aluminum
acid
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3311979A
Other languages
Japanese (ja)
Inventor
Yorihiro Uchiyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP3311979A priority Critical patent/JPS55125647A/en
Publication of JPS55125647A publication Critical patent/JPS55125647A/en
Pending legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To obtain a multi-layered wiring structure with a desired taper by preparing a wiring structure consisting of a lower layer of pure aluminum and an upper layer of Cu-added aluminum, and subjecting the wiring structure to chemical etching. CONSTITUTION:A pure-aluminum layer 12 is formed by sputtering on a PSG film 11 formed on a Si substrate 10. An aluminum layer 13 containing approximately 4 wt.% of Cu is formed in the same manner on the layer 12. A resist mask 14 is formed on the layer 13, and the aluminum is etched with a mixture of sulfuric acid, acetic acid and nitric acid. As a result, the layer 13 is etched early so that the aluminum layers are changed into a trapezoidal form having an angle theta of 60-70 deg.. In the resulting wiring structure having such an angle as mentioned above, breaking of wire never occurs. When an etching solution consisting of the above-mentioned mixture and water, in which the composition ratio of sulfuric acid, acetic acid, nitric acid and water is 16:1:1:2, is used, a wiring structure having a smooth and ideally curved bottom surface can be obtained. According to this method, aluminum wiring with a desired taper can be obtained by simple etching, and this method can be advantageously used to form a multi-layer wiring structure. Moreover, this wiring structure has a high electromigration resistance, and permits maintaining a high current density.
JP3311979A 1979-03-20 1979-03-20 Semiconductor device and production of the same Pending JPS55125647A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3311979A JPS55125647A (en) 1979-03-20 1979-03-20 Semiconductor device and production of the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3311979A JPS55125647A (en) 1979-03-20 1979-03-20 Semiconductor device and production of the same

Publications (1)

Publication Number Publication Date
JPS55125647A true JPS55125647A (en) 1980-09-27

Family

ID=12377735

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3311979A Pending JPS55125647A (en) 1979-03-20 1979-03-20 Semiconductor device and production of the same

Country Status (1)

Country Link
JP (1) JPS55125647A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5336363A (en) * 1993-09-24 1994-08-09 Applied Materials, Inc. Low temperature dry etch of copper

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5336363A (en) * 1993-09-24 1994-08-09 Applied Materials, Inc. Low temperature dry etch of copper

Similar Documents

Publication Publication Date Title
US3586922A (en) Multiple-layer metal structure and processing
JPS55125647A (en) Semiconductor device and production of the same
KR900002315A (en) Isolation Transmission Line and Forming Method
JPS55102235A (en) Formation of interlayer conductive layer
JPS56155550A (en) Multilayer wiring structure and manufacture thereof
JPS57145327A (en) Manufacture of semiconductor device
JPS6476797A (en) Manufacture of superconducting thin-film multi-layer board
JPS5513995A (en) Method of producing a semiconductor device
JPS5469393A (en) Production of semiconductor device
JPS6466953A (en) Semiconductor device
JPS5654051A (en) Formation of electrode wiring
JPS5687326A (en) Method of forming wiring
JPS6451698A (en) Manufacture of superconducting thin film multilayer board
JPS5526686A (en) Manufacturing semiconductor device
JPS56114355A (en) Manufacture of semiconductor device
JPS5546587A (en) Method of forming plasma growing film
JPS57169259A (en) Manufacture of semiconductor device
JPS5538061A (en) Bridging wiring method
JPS55153352A (en) Forming method of aluminum conductive layer
JPS6444045A (en) Wiring structure of semiconductor device
JPS5527644A (en) Multi-layer wiring type semiconductor device
JPS54113277A (en) Production of semiconductor device
JPS56164569A (en) Semiconductor device
JPS5768035A (en) Manufacture of semiconductor device
JPS55118652A (en) Manufacture of semiconductor device