JPS6442886A - Semiconductor laser and manufacture thereof - Google Patents
Semiconductor laser and manufacture thereofInfo
- Publication number
- JPS6442886A JPS6442886A JP20019587A JP20019587A JPS6442886A JP S6442886 A JPS6442886 A JP S6442886A JP 20019587 A JP20019587 A JP 20019587A JP 20019587 A JP20019587 A JP 20019587A JP S6442886 A JPS6442886 A JP S6442886A
- Authority
- JP
- Japan
- Prior art keywords
- gaas
- mesa
- current blocking
- layer
- formation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Semiconductor Lasers (AREA)
Abstract
PURPOSE:To prevent the property deterioration due to the mask deviation and decrease in yield by a method wherein a current blocking laser and a cap layer laminated through an LPE method for the formation of a current injecting path. CONSTITUTION:A buried type wafer, which is laminated containing up to a melt-back preventive layer 8 through an organic metal thermal decomposition vapour growth, is introduced into a liquid growth oven so as to laminate a current blocking layer 4 of GaAs and a cap layer 5 of GaAs through a liquid growth method (LPE method) for the formation of a refractive index guide structure. Here, the mesa is high enough to be larger than 2mum in height, wherefore the mesa side face and base are sufficiently able to be coated with a GaAs current blocking layer making advantage of the characteristic of an LPE method without any deposition on the upper surface of the mesa.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20019587A JPH0658987B2 (en) | 1987-08-10 | 1987-08-10 | Semiconductor laser and manufacturing method thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20019587A JPH0658987B2 (en) | 1987-08-10 | 1987-08-10 | Semiconductor laser and manufacturing method thereof |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6442886A true JPS6442886A (en) | 1989-02-15 |
JPH0658987B2 JPH0658987B2 (en) | 1994-08-03 |
Family
ID=16420382
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP20019587A Expired - Lifetime JPH0658987B2 (en) | 1987-08-10 | 1987-08-10 | Semiconductor laser and manufacturing method thereof |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0658987B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5318761A (en) * | 1991-07-18 | 1994-06-07 | Sumitomo Metal Industries, Ltd. | Process for preparing silicon carbide powder for use in semiconductor equipment |
-
1987
- 1987-08-10 JP JP20019587A patent/JPH0658987B2/en not_active Expired - Lifetime
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5318761A (en) * | 1991-07-18 | 1994-06-07 | Sumitomo Metal Industries, Ltd. | Process for preparing silicon carbide powder for use in semiconductor equipment |
Also Published As
Publication number | Publication date |
---|---|
JPH0658987B2 (en) | 1994-08-03 |
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