JPS6442886A - Semiconductor laser and manufacture thereof - Google Patents

Semiconductor laser and manufacture thereof

Info

Publication number
JPS6442886A
JPS6442886A JP20019587A JP20019587A JPS6442886A JP S6442886 A JPS6442886 A JP S6442886A JP 20019587 A JP20019587 A JP 20019587A JP 20019587 A JP20019587 A JP 20019587A JP S6442886 A JPS6442886 A JP S6442886A
Authority
JP
Japan
Prior art keywords
gaas
mesa
current blocking
layer
formation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP20019587A
Other languages
Japanese (ja)
Other versions
JPH0658987B2 (en
Inventor
Hiroaki Fujii
Kenichi Kobayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP20019587A priority Critical patent/JPH0658987B2/en
Publication of JPS6442886A publication Critical patent/JPS6442886A/en
Publication of JPH0658987B2 publication Critical patent/JPH0658987B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To prevent the property deterioration due to the mask deviation and decrease in yield by a method wherein a current blocking laser and a cap layer laminated through an LPE method for the formation of a current injecting path. CONSTITUTION:A buried type wafer, which is laminated containing up to a melt-back preventive layer 8 through an organic metal thermal decomposition vapour growth, is introduced into a liquid growth oven so as to laminate a current blocking layer 4 of GaAs and a cap layer 5 of GaAs through a liquid growth method (LPE method) for the formation of a refractive index guide structure. Here, the mesa is high enough to be larger than 2mum in height, wherefore the mesa side face and base are sufficiently able to be coated with a GaAs current blocking layer making advantage of the characteristic of an LPE method without any deposition on the upper surface of the mesa.
JP20019587A 1987-08-10 1987-08-10 Semiconductor laser and manufacturing method thereof Expired - Lifetime JPH0658987B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20019587A JPH0658987B2 (en) 1987-08-10 1987-08-10 Semiconductor laser and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20019587A JPH0658987B2 (en) 1987-08-10 1987-08-10 Semiconductor laser and manufacturing method thereof

Publications (2)

Publication Number Publication Date
JPS6442886A true JPS6442886A (en) 1989-02-15
JPH0658987B2 JPH0658987B2 (en) 1994-08-03

Family

ID=16420382

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20019587A Expired - Lifetime JPH0658987B2 (en) 1987-08-10 1987-08-10 Semiconductor laser and manufacturing method thereof

Country Status (1)

Country Link
JP (1) JPH0658987B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5318761A (en) * 1991-07-18 1994-06-07 Sumitomo Metal Industries, Ltd. Process for preparing silicon carbide powder for use in semiconductor equipment

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5318761A (en) * 1991-07-18 1994-06-07 Sumitomo Metal Industries, Ltd. Process for preparing silicon carbide powder for use in semiconductor equipment

Also Published As

Publication number Publication date
JPH0658987B2 (en) 1994-08-03

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