JPS6439030A - Formation of thin film - Google Patents

Formation of thin film

Info

Publication number
JPS6439030A
JPS6439030A JP19445187A JP19445187A JPS6439030A JP S6439030 A JPS6439030 A JP S6439030A JP 19445187 A JP19445187 A JP 19445187A JP 19445187 A JP19445187 A JP 19445187A JP S6439030 A JPS6439030 A JP S6439030A
Authority
JP
Japan
Prior art keywords
substrate
thin film
grooves
stepped portions
burying
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP19445187A
Other languages
Japanese (ja)
Other versions
JP2637110B2 (en
Inventor
Sadahisa Noguchi
Haruo Okano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP62194451A priority Critical patent/JP2637110B2/en
Publication of JPS6439030A publication Critical patent/JPS6439030A/en
Application granted granted Critical
Publication of JP2637110B2 publication Critical patent/JP2637110B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Element Separation (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE:To improve the connection between a substrate and a thin film by cooling the substrate below the boiling point of a reaction product among gas introduced into a reaction vessel and active species produced by excitation or introduced gas for burying grooves or stepped portions in the substrate surface. CONSTITUTION:A thin film 22 for burying beforehand grooves or stepped portions or a thin film 23 having good connection with a substrate to be processed is deposited on the surface of the grooves 21 or the stepped portions of the substrate 20 placed in a reaction vessel. The substrate 20 is cooled below the boiling point of a reaction product among gas introduced into the reaction vessel and active species produced by excitation or introduced gas, for burying the grooves or the stepped portions. Hereby, the connection between the thin film for burying the grooves and the stepped portions, and the substrate is improved.
JP62194451A 1987-08-05 1987-08-05 Thin film formation method Expired - Lifetime JP2637110B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62194451A JP2637110B2 (en) 1987-08-05 1987-08-05 Thin film formation method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62194451A JP2637110B2 (en) 1987-08-05 1987-08-05 Thin film formation method

Publications (2)

Publication Number Publication Date
JPS6439030A true JPS6439030A (en) 1989-02-09
JP2637110B2 JP2637110B2 (en) 1997-08-06

Family

ID=16324789

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62194451A Expired - Lifetime JP2637110B2 (en) 1987-08-05 1987-08-05 Thin film formation method

Country Status (1)

Country Link
JP (1) JP2637110B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004008516A1 (en) * 2002-07-10 2004-01-22 Tokyo Electron Limited Method of forming film and film forming apparatus

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5735327A (en) * 1980-08-13 1982-02-25 Hitachi Ltd Semiconductor device
JPS59175730A (en) * 1983-03-26 1984-10-04 Mitsubishi Electric Corp Electron beam polymerized film forming apparatus
JPS61218134A (en) * 1985-03-23 1986-09-27 Nippon Telegr & Teleph Corp <Ntt> Device and method for forming thin film
JPS61241930A (en) * 1985-04-18 1986-10-28 Matsushita Electric Ind Co Ltd Plasma chemical vapor deposition device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5735327A (en) * 1980-08-13 1982-02-25 Hitachi Ltd Semiconductor device
JPS59175730A (en) * 1983-03-26 1984-10-04 Mitsubishi Electric Corp Electron beam polymerized film forming apparatus
JPS61218134A (en) * 1985-03-23 1986-09-27 Nippon Telegr & Teleph Corp <Ntt> Device and method for forming thin film
JPS61241930A (en) * 1985-04-18 1986-10-28 Matsushita Electric Ind Co Ltd Plasma chemical vapor deposition device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004008516A1 (en) * 2002-07-10 2004-01-22 Tokyo Electron Limited Method of forming film and film forming apparatus

Also Published As

Publication number Publication date
JP2637110B2 (en) 1997-08-06

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