JPS6435405A - Light waveguide mutual connection circuit - Google Patents

Light waveguide mutual connection circuit

Info

Publication number
JPS6435405A
JPS6435405A JP63157020A JP15702088A JPS6435405A JP S6435405 A JPS6435405 A JP S6435405A JP 63157020 A JP63157020 A JP 63157020A JP 15702088 A JP15702088 A JP 15702088A JP S6435405 A JPS6435405 A JP S6435405A
Authority
JP
Japan
Prior art keywords
light guide
thin film
plane
dielectric layer
flat face
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP63157020A
Other languages
English (en)
Inventor
Fusein Anisu
Tei Sariban Chiyaaruzu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Honeywell Inc
Original Assignee
Honeywell Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honeywell Inc filed Critical Honeywell Inc
Publication of JPS6435405A publication Critical patent/JPS6435405A/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/122—Basic optical elements, e.g. light-guiding paths
    • G02B6/125—Bends, branchings or intersections
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/43—Arrangements comprising a plurality of opto-electronic elements and associated optical interconnections
JP63157020A 1987-06-29 1988-06-27 Light waveguide mutual connection circuit Pending JPS6435405A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/066,930 US4762382A (en) 1987-06-29 1987-06-29 Optical interconnect circuit for GaAs optoelectronics and Si VLSI/VHSIC

Publications (1)

Publication Number Publication Date
JPS6435405A true JPS6435405A (en) 1989-02-06

Family

ID=22072642

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63157020A Pending JPS6435405A (en) 1987-06-29 1988-06-27 Light waveguide mutual connection circuit

Country Status (3)

Country Link
US (1) US4762382A (ja)
EP (1) EP0297483A3 (ja)
JP (1) JPS6435405A (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6458614B1 (en) 1998-03-26 2002-10-01 Murata Manufacturing Co., Opto-electronic integrated circuit

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US4890895A (en) * 1987-11-13 1990-01-02 Kopin Corporation Optoelectronic interconnections for III-V devices on silicon
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FR2676126B1 (fr) * 1991-04-30 1993-07-23 France Telecom Dispositif optoelectronique a guide optique et photodetecteur integres.
EP0536829B1 (en) * 1991-10-08 1997-02-05 Koninklijke Philips Electronics N.V. Optoelectronic semiconductor device comprising a waveguide and method of manufacturing such a device
US5148504A (en) * 1991-10-16 1992-09-15 At&T Bell Laboratories Optical integrated circuit designed to operate by use of photons
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US5519363A (en) * 1994-05-31 1996-05-21 The Whitaker Corporation Controlled impedance lines connected to optoelectronic devices
WO1996000996A1 (en) * 1994-06-30 1996-01-11 The Whitaker Corporation Planar hybrid optical amplifier
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US6498870B1 (en) 1998-04-20 2002-12-24 Omm, Inc. Micromachined optomechanical switches
US6449406B1 (en) 1999-05-28 2002-09-10 Omm, Inc. Micromachined optomechanical switching devices
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US6453083B1 (en) 1999-05-28 2002-09-17 Anis Husain Micromachined optomechanical switching cell with parallel plate actuator and on-chip power monitoring
US6445841B1 (en) 1999-05-28 2002-09-03 Omm, Inc. Optomechanical matrix switches including collimator arrays
US6539157B2 (en) * 2000-12-28 2003-03-25 Honeywell Advanced Circuits, Inc. Layered circuit boards and methods of production thereof
CN1589513A (zh) * 2001-09-20 2005-03-02 阿拉巴玛州立大学伯明翰研究基金会 中红外微芯片激光器:带有可饱和吸收材料的ZnS:Cr2+激光器
DE10261276B4 (de) 2002-12-27 2005-12-01 Eisenmann Maschinenbau Gmbh & Co. Kg Vorlagebehälter für pulverförmige Medien
DE102005004582A1 (de) 2005-01-26 2006-07-27 Philipps-Universität Marburg III/V-Halbleiter
DE102006061586B4 (de) * 2006-12-27 2009-01-08 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verbindungsnetzwerk zwischen Halbleiterstrukturen sowie damit ausgestatteter Schaltkreis und Verfahren zur Datenübertragung
US8290325B2 (en) * 2008-06-30 2012-10-16 Intel Corporation Waveguide photodetector device and manufacturing method thereof
US8253211B2 (en) * 2008-09-24 2012-08-28 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor sensor structures with reduced dislocation defect densities
US8842946B1 (en) * 2011-04-01 2014-09-23 Kotura, Inc. Light sensor having reduced dark current
DE102011016366B4 (de) 2011-04-07 2018-09-06 Nasp Iii/V Gmbh III/V-Si-Template, dessen Verwendung und Verfahren zu dessen Herstellung
US9595438B2 (en) 2011-09-12 2017-03-14 Nasp Iii/V Gmbh Method for producing a III/V Si template
KR102125277B1 (ko) * 2012-06-26 2020-06-22 삼성전자주식회사 광 집적 회로, 이를 포함하는 반도체 장치 및 그 제조 방법
DE112013007072T5 (de) * 2013-06-28 2016-01-28 Intel Corporation Nano-Strukturen und Nano-Merkmale mit Si (111)-Ebenen auf Si (100)-Wafer für III-N Epitaxie
US10571629B1 (en) * 2018-08-17 2020-02-25 University Of Southampton Waveguide for an integrated photonic device

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JPS6051682B2 (ja) * 1977-12-27 1985-11-15 沖電気工業株式会社 光モ−ド弁別器
JPS5810721B2 (ja) * 1978-06-10 1983-02-26 日本電信電話株式会社 薄膜光素子の製造方法
US4178197A (en) * 1979-03-05 1979-12-11 International Business Machines Corporation Formation of epitaxial tunnels utilizing oriented growth techniques
US4426440A (en) * 1982-11-18 1984-01-17 The United States Of America As Represented By The Secretary Of The Army Integrated optical grating device by thermal SiO2 growth on Si
JPS59159105A (ja) * 1983-03-02 1984-09-08 Hitachi Ltd 光導波路
FR2548220B1 (fr) * 1983-07-01 1987-07-31 Labo Electronique Physique Guide d'onde lumineuse sur materiau semi-conducteur
US4652290A (en) * 1983-07-05 1987-03-24 Motorola, Inc. Method for making optical channel waveguides and product manufactured thereby
JP2594895B2 (ja) * 1983-07-08 1997-03-26 株式会社日立製作所 光集積回路素子の製造方法
US4585299A (en) * 1983-07-19 1986-04-29 Fairchild Semiconductor Corporation Process for fabricating optical wave-guiding components and components made by the process
US4701008A (en) * 1984-08-10 1987-10-20 Motorola, Inc. Optical waveguide including superstrate of niobium or silicon oxynitride and method of making same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6458614B1 (en) 1998-03-26 2002-10-01 Murata Manufacturing Co., Opto-electronic integrated circuit

Also Published As

Publication number Publication date
EP0297483A3 (en) 1990-07-04
EP0297483A2 (en) 1989-01-04
US4762382A (en) 1988-08-09

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