CN1589513A - 中红外微芯片激光器:带有可饱和吸收材料的ZnS:Cr2+激光器 - Google Patents
中红外微芯片激光器:带有可饱和吸收材料的ZnS:Cr2+激光器 Download PDFInfo
- Publication number
- CN1589513A CN1589513A CNA028229487A CN02822948A CN1589513A CN 1589513 A CN1589513 A CN 1589513A CN A028229487 A CNA028229487 A CN A028229487A CN 02822948 A CN02822948 A CN 02822948A CN 1589513 A CN1589513 A CN 1589513A
- Authority
- CN
- China
- Prior art keywords
- laser
- crystal
- laser medium
- microchip
- zns
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000463 material Substances 0.000 title claims abstract description 19
- 239000006096 absorbing agent Substances 0.000 title description 4
- 239000013078 crystal Substances 0.000 claims abstract description 100
- 238000005086 pumping Methods 0.000 claims abstract description 28
- 239000000835 fiber Substances 0.000 claims abstract description 20
- 238000009792 diffusion process Methods 0.000 claims abstract description 7
- 238000000137 annealing Methods 0.000 claims abstract description 5
- 238000000151 deposition Methods 0.000 claims abstract description 5
- 229910052751 metal Inorganic materials 0.000 claims abstract description 5
- 239000002184 metal Substances 0.000 claims abstract description 5
- 238000002294 plasma sputter deposition Methods 0.000 claims abstract description 4
- 230000008021 deposition Effects 0.000 claims abstract 3
- 238000000034 method Methods 0.000 claims description 42
- 229910052723 transition metal Inorganic materials 0.000 claims description 32
- 150000003624 transition metals Chemical class 0.000 claims description 32
- 230000003287 optical effect Effects 0.000 claims description 23
- 230000005855 radiation Effects 0.000 claims description 21
- 229910052691 Erbium Inorganic materials 0.000 claims description 19
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 claims description 19
- 239000000203 mixture Substances 0.000 claims description 9
- 230000008878 coupling Effects 0.000 claims description 7
- 238000010168 coupling process Methods 0.000 claims description 7
- 238000005859 coupling reaction Methods 0.000 claims description 7
- 239000004065 semiconductor Substances 0.000 claims description 6
- 230000005684 electric field Effects 0.000 claims description 5
- 238000002156 mixing Methods 0.000 claims description 5
- 238000005498 polishing Methods 0.000 claims description 4
- 229910052793 cadmium Inorganic materials 0.000 claims description 3
- 238000006073 displacement reaction Methods 0.000 claims description 3
- 229910052711 selenium Inorganic materials 0.000 claims description 3
- 229910052714 tellurium Inorganic materials 0.000 claims description 3
- 230000001052 transient effect Effects 0.000 claims description 3
- 229910052791 calcium Inorganic materials 0.000 claims description 2
- 238000000541 cathodic arc deposition Methods 0.000 claims description 2
- 229910052738 indium Inorganic materials 0.000 claims description 2
- 229910052745 lead Inorganic materials 0.000 claims description 2
- 229910052749 magnesium Inorganic materials 0.000 claims description 2
- 238000004549 pulsed laser deposition Methods 0.000 claims description 2
- 229910052712 strontium Inorganic materials 0.000 claims description 2
- 229910052717 sulfur Inorganic materials 0.000 claims description 2
- 230000005284 excitation Effects 0.000 claims 7
- 238000012797 qualification Methods 0.000 claims 2
- 229910052725 zinc Inorganic materials 0.000 claims 2
- 230000002745 absorbent Effects 0.000 claims 1
- 239000002250 absorbent Substances 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- 229910052788 barium Inorganic materials 0.000 claims 1
- 239000003365 glass fiber Substances 0.000 claims 1
- 229910052753 mercury Inorganic materials 0.000 claims 1
- 239000002019 doping agent Substances 0.000 abstract description 5
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 238000010791 quenching Methods 0.000 abstract description 4
- 230000000171 quenching effect Effects 0.000 abstract description 4
- 230000015572 biosynthetic process Effects 0.000 abstract 2
- 230000000593 degrading effect Effects 0.000 abstract 1
- 230000006641 stabilisation Effects 0.000 abstract 1
- 238000011105 stabilization Methods 0.000 abstract 1
- 239000010409 thin film Substances 0.000 abstract 1
- 239000011651 chromium Substances 0.000 description 94
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 36
- 238000001228 spectrum Methods 0.000 description 20
- 230000003595 spectral effect Effects 0.000 description 19
- 238000010521 absorption reaction Methods 0.000 description 17
- 238000010586 diagram Methods 0.000 description 13
- 238000002474 experimental method Methods 0.000 description 12
- 238000001069 Raman spectroscopy Methods 0.000 description 8
- 229910052804 chromium Inorganic materials 0.000 description 7
- 238000011160 research Methods 0.000 description 7
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 6
- 239000006185 dispersion Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 150000002500 ions Chemical class 0.000 description 6
- 239000013307 optical fiber Substances 0.000 description 6
- 238000004458 analytical method Methods 0.000 description 5
- 230000008901 benefit Effects 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 239000011159 matrix material Substances 0.000 description 5
- 230000007704 transition Effects 0.000 description 5
- 235000012431 wafers Nutrition 0.000 description 5
- 230000003321 amplification Effects 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 4
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 4
- 238000002189 fluorescence spectrum Methods 0.000 description 4
- 238000003199 nucleic acid amplification method Methods 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- 238000000862 absorption spectrum Methods 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 230000010355 oscillation Effects 0.000 description 3
- 230000005622 photoelectricity Effects 0.000 description 3
- 238000002310 reflectometry Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 230000000930 thermomechanical effect Effects 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- 229910001428 transition metal ion Inorganic materials 0.000 description 3
- 241000931526 Acer campestre Species 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910004261 CaF 2 Inorganic materials 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 150000004770 chalcogenides Chemical class 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000004927 clay Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000012937 correction Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000000295 emission spectrum Methods 0.000 description 2
- 230000005281 excited state Effects 0.000 description 2
- 238000004868 gas analysis Methods 0.000 description 2
- 230000005283 ground state Effects 0.000 description 2
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 230000002269 spontaneous effect Effects 0.000 description 2
- 230000001629 suppression Effects 0.000 description 2
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
- 240000008168 Ficus benjamina Species 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- 241000046695 Mitra lens Species 0.000 description 1
- 229910052775 Thulium Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 239000011149 active material Substances 0.000 description 1
- 239000003708 ampul Substances 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 230000002146 bilateral effect Effects 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 239000003518 caustics Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000005090 crystal field Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000005170 crystalloluminescence Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007850 degeneration Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000003745 diagnosis Methods 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 230000005518 electrochemistry Effects 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 239000011630 iodine Substances 0.000 description 1
- 238000005342 ion exchange Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 210000001503 joint Anatomy 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 235000020030 perry Nutrition 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000000700 radioactive tracer Substances 0.000 description 1
- 230000010076 replication Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 230000009897 systematic effect Effects 0.000 description 1
- FRNOGLGSGLTDKL-UHFFFAOYSA-N thulium atom Chemical compound [Tm] FRNOGLGSGLTDKL-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- -1 tungsten halide Chemical class 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/08—Construction or shape of optical resonators or components thereof
- H01S3/08018—Mode suppression
- H01S3/0804—Transverse or lateral modes
- H01S3/0805—Transverse or lateral modes by apertures, e.g. pin-holes or knife-edges
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
- C30B29/48—AIIBVI compounds wherein A is Zn, Cd or Hg, and B is S, Se or Te
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/02—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the solid state
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/0602—Crystal lasers or glass lasers
- H01S3/0604—Crystal lasers or glass lasers in the form of a plate or disc
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/0627—Construction or shape of active medium the resonator being monolithic, e.g. microlaser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/08—Construction or shape of optical resonators or components thereof
- H01S3/08004—Construction or shape of optical resonators or components thereof incorporating a dispersive element, e.g. a prism for wavelength selection
- H01S3/08009—Construction or shape of optical resonators or components thereof incorporating a dispersive element, e.g. a prism for wavelength selection using a diffraction grating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/08—Construction or shape of optical resonators or components thereof
- H01S3/08086—Multiple-wavelength emission
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
- H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
- H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
- H01S3/094042—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a fibre laser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
- H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
- H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
- H01S3/094042—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a fibre laser
- H01S3/094046—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a fibre laser of a Raman fibre laser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
- H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
- H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
- H01S3/0941—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode
- H01S3/09415—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode the pumping beam being parallel to the lasing mode of the pumped medium, e.g. end-pumping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/105—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the mutual position or the reflecting properties of the reflectors of the cavity, e.g. by controlling the cavity length
- H01S3/1055—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the mutual position or the reflecting properties of the reflectors of the cavity, e.g. by controlling the cavity length one of the reflectors being constituted by a diffraction grating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
- H01S3/108—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using non-linear optical devices, e.g. exhibiting Brillouin or Raman scattering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/11—Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping
- H01S3/1123—Q-switching
- H01S3/115—Q-switching using intracavity electro-optic devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/11—Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping
- H01S3/1123—Q-switching
- H01S3/117—Q-switching using intracavity acousto-optic devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/1601—Solid materials characterised by an active (lasing) ion
- H01S3/162—Solid materials characterised by an active (lasing) ion transition metal
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/1601—Solid materials characterised by an active (lasing) ion
- H01S3/162—Solid materials characterised by an active (lasing) ion transition metal
- H01S3/1623—Solid materials characterised by an active (lasing) ion transition metal chromium, e.g. Alexandrite
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2301/00—Functional characteristics
- H01S2301/04—Gain spectral shaping, flattening
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/0014—Monitoring arrangements not otherwise provided for
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/0602—Crystal lasers or glass lasers
- H01S3/0617—Crystal lasers or glass lasers having a varying composition or cross-section in a specific direction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
- H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
- H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
- H01S3/094038—End pumping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/11—Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping
- H01S3/1123—Q-switching
- H01S3/113—Q-switching using intracavity saturable absorbers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/1628—Solid materials characterised by a semiconducting matrix
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/914—Doping
- Y10S438/917—Deep level dopants, e.g. gold, chromium, iron or nickel
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Nonlinear Science (AREA)
- Lasers (AREA)
Abstract
一种激光增益材料的制备方法以及这种介质的使用包括步骤:通过脉冲激光沉积或等离子溅射生长晶体后,引入一过渡金属,优选在ZnS晶体面上具有可控制厚度的Cr2+薄膜;在能提供晶体体积中最高的掺杂物浓度而不使激光器的性能由于散射和浓度猝熄而降低的一定的温度和作用时间内将晶体热退火,以使掺杂物有效地热扩散进入晶体体积中;通过在Cr:ZnS晶片的扁平和平行面上直接沉积反射镜,或通过依靠这些面的内部反射而形成微芯片激光器。增益材料对微芯片激光器使用直流二极管或光纤激光器泵激是很敏感的,该种泵激具有能形成正透镜、相应的空腔谐振器稳定状态和在激光材料中临界粒子数反转的功率密度水平。激光器材料的多种应用在本发明中被构思。
Description
本专利申请依据2001年9月20日递交的临时专利申请No.60/323,551要求优先权。
技术领域
本发明涉及量子电子学领域,尤其涉及激光技术的原理性基础,并能用于研制可调中红外(Mid-IR)固态激光器。
主要地,当要求用在中红外光谱范围内可调的单频激光发射来解决科学和技术不同领域内的问题(例如激光光谱仪、微量气体分析、光电化学、光电生物学、医药和特殊波长的军事应用等)的情况下,可使用本发明。
对于可应用于各种用途的、价格适中的中红外源的需求正在日益增加,所述应用包括大气感测(全球的风的感测和低海拔高度的风的切力的检测)、用于非侵害性医学诊断的、对眼睛无损伤的医学激光源,对眼睛无损伤的激光雷达和对大气成分的遥感、光通信和大量的诸如目标标定、故障排除和红外线对抗措施等的军事应用。这些应用依赖于大量有机分子在中红外范围内存在有“光谱学指纹”。
最近的研究进程已激励了相当可观的努力来发展实用的中红外光源。这些努力已包括:在使用InAsSbP/InAsSb/InAs的半导体中和在量子级联激光器中直接产生中红外波长。也可以利用光参量振荡器和差频发生器中的非线性特性来产生中红外波长。所有这些方法均可以得到可调的中红外光源,但它们都遇到了限制其作为坚固耐用的低成本中红外源的某些基本原理上的问题。而且,至今为止,所有这些光源都具有有限的输出功率,从而使它们不能在诸如遥感等高功率应用中被使用。
与使用上述方法进行了相对多的研究形成对比的是,对于由放置在宽能隙二元和混合三元II-VI半导体晶体的不对称(Td)晶格处的二价过渡金属离子(TM2+)产生直接振荡的可能性所进行的研究一直是很少的。缺乏对铬掺杂(或其他过渡金属掺杂)光源在中红外直接发射的研究有一个主要原因。长波长的横磁波(TM)发射经常会被传统的激光器基片介质(例如氧化物和氟化物晶体)中的多光子过程所猝熄,从而导致发射荧光的极低的室温量子效率。
最近,有关于用Cr:ZnS6,7,8,9,10、Cr:ZnSe6,7,11,12,13,14,15,16,17,18、Cr:Cd1-xMnxTe19、Cr:CdSe20和Fe2+:ZnSe21晶体在大约2~4μm波长的中红外激光发射的报道。这些掺杂过渡金属(TM)的II-VI化合物具有宽的能带隙,并拥有将它们与其他氧化物和氟化物激光晶体区别开来的几个重要特征。第一个特征是存在着用以替代Zn2+或Cd2+基质离子的、不需要电荷补偿的、化学上稳定的二价过渡金属(TM)掺杂剂离子。II-VI化合物的另外的特征是它们倾向于以四面体场结构进行结晶。与位于掺杂物所在点的典型的八面体场结构相反的是,四面体场结构给出较小的晶体场分裂,可将掺杂物的跃迁进一步向红外推进。最后,这些材料的一个关键特征在于差的声子能谱,这使得它们在很宽的光谱范围内是透明的,减少了非辐射衰减率,从而可以在室温下提高荧光发射的效率。
就其高的平均功率应用上的优点而言,已知某些硫族化物(例如ZnS和ZnSe)具有优异的热机械性能,它们具有与热机械性能稳定的材料(如YAG晶体)相当的抗热冲击性能和比之更优秀的热传导系数。以其吸引人的热机械性能和TM2+的光谱性能,迭加上Cr2+吸收发射铒(Er)铥(Tm)光纤激光器以及染色层InGaAsP/InP及InGaNAs/GaAs(理论上)二极管激光器,可以认为,直接被光纤或二极管泵激的、掺杂以过渡金属(TM)离子的宽带半导体晶体是可用于医学、遥感、微量气体分析和高功率波长的特殊军事应用的非常有前景和有效的系统。
对掺杂过渡金属(TM2+)离子的II-VI材料的研究表明:就其光谱和激光性能而言,这些介质非常接近掺钛蓝宝石(Ti-S)的中红外类似物。可以预料,类似于Ti-S激光器,在不远的将来,掺杂过渡金属(TM2+)离子的硫属化物,将能够以多种多样可能的振荡方式发射激光,并且具有可用InGaAsP或InGaNAs二极管阵列的辐射直接泵激的附加的重要优点。
在最近的2至7年中,包括本发明人在内的几个小组,已经积极探索了用于在连续波、自激长脉冲、Q开关和锁模工作方式下可调谐激光发射的相类似的过渡金属离子(TM2+)晶体基质。到目前为止,利用Cr2+:ZnSe晶体所得到的最令人印象深刻的结果是:室温下运行,大于60%的激光发射效率,输出功率3.7W,大于1000nm的波长可调范围。基于这些结果,看来掺杂Cr的ZnS和ZnSe晶体拥有了技术上、热机械上的、光谱上的以及激光特性上的独特的组合,这种组合使得它们成为潜在的低成本、价格适中的中红外线激光源。
但是,在对TM2+:II-VI材料的这些光谱的和激光的研究中,并没有迹象表明微芯片激光器和芯片大小的集成激光器能以掺杂过渡金属(TM)II-VI基质为基础进行设计。除了任何激光发射介质必须的标准要素外,微芯片激光发射还需要几个特殊的要素。这些附加的要素是:激活材料薄层(通常小于1~2μm)具有高的光密度和高的增益,这些附加要素可以释义为高的吸收和辐射横截面并结合以高的激活离子掺杂水平,但在这个水平上仍然没有发射荧光的浓度猝熄和基质材料的光学质量的退化。
在现有技术中同样未知的是“空间分散”的空腔谐振器的设计,用来实现从单频到极宽频带、工作在多线方式范围内的可容易地再设计的、灵活的激光器模块。
美国专利No.5,461,635和6,236,666指教了基于在单一激光空腔谐振器内不同波长空间分离的超宽带(SBL)或多波长系统22,23,24,25的方法。空腔谐振器的光学组件在半导体芯片的激发区保持了明显的增益通道,减少了交叉干扰,抑制了模式竞争,并强迫每一个通道在特定的稳定了的波长上发射激光。通过适当地设计这种空腔谐振器的结构,系统产生出自己的微空腔谐振器,每一个微空腔谐振器在激光发射材料的整个增益光谱段的不同波长上发出激光。从对普通激光器空腔谐振器内产生的激光波长加以控制的观点看,系统是理想的,并且能够得到非常小的并且可以控制的波长间隔。该方法实现了一种激光器的结构,这种激光器发射多条狭窄的光谱线,这些光谱线能够在增益介质的放大光谱内很容易地被修整成任何事先设定的光谱组成。该方法已经在实验室条件下演示出三十条谱线的发射,而且其稳定性和测得的线宽大小是非常令人鼓舞的。用于遥感的传统可调激光系统只适用于对单一元件的分析。被提议的简单、灵活并易于重新设计的激光器模块为同步的多组分气体示踪分析提供了新的可能。看来,掺杂过渡金属(TM)的II-VI基质,尤其是以具有宽的放大光谱为特征的掺铬ZnS和ZnSe晶体,是用于超宽带和多线激光发射的理想激光发射介质。
最后,在先技术一直没有提供在一个组合了激光发射介质、声光或电光调制器、滤波器、空腔谐振器的其它无源组件(如波导光栅)或双折射滤波器的集成微芯片系统中,II-VI晶体的声光、电光、光折射和双折射特性的使用。
发明内容
本发明构思了一种新的种类的基于过渡金属(TM2+=Ti,V,Cr,Mn,Fe,Co,Ni和Cu)掺杂的、公式为MeZ的二价II-VI晶体的中红外微芯片激光器,公式中Me可以是Zn,Cd,Ca,Mg,Sr,Ba,Hg,Pb,而Z可以是S,Se,Te,O和它们的混合物,Z也可以是公式为MeX2Z4,X为Ga,In,Al的混合的三元硫族化合物基质。本发明的一个特殊实施例是基于掺铬(Cr2+)的ZnS,ZnSe,CdS和CdSe晶体的微芯片激光器。这种微芯片激光器是最紧凑和最简单的、具有典型尺寸为0.5至1mm3的、由二极管或光纤激光器泵激的固态激光器。所建议的微芯片激光器的主要优点是能以大规模生产方法制造,从而允许以具有良好的再复制率、可靠性和简单性的低成本的大量生产,允许其使用可不需要任何的光学校准和维护。
以下步骤与本发明的实际应用有密切的关系。
生长(化学、物理气相传输或其他方法)或从商业卖主那里购买II-VI基质晶体材料,然后将它们切割成0.1至3mm厚度的抛光晶片;
在以脉冲激光沉积、等离子溅射、阴极电弧沉积或其他方法生长晶体这样的步骤之后,在晶体面上引入具有可控制厚度的过渡金属(例如Cr)薄膜;
在能提供晶体体积中最高的掺杂物浓度而不使激光器的性能由于散射和浓度猝熄而降低的一定的温度和作用时间内,在电场的同时作用下将晶体热退火,以使掺杂物有效地热扩散进入晶体体积中;
抛光微芯片表面;
通过在一薄的TM:II-VI晶片的平的平行的被抛光平面上直接沉积镜面的方法,形成微芯片激光器。
这样,制备好的微芯片激光器可用直流二极管(direct diode)或光纤激光器以具有能形成正透镜、相应的空腔谐振器状态稳定和在激光材料中临界粒子数反转的功率密度水平来泵激,
本发明通过利用II-VI晶体的声光、电光、光电折射和双折射特性,还构思了一种组合激光发射介质、声光或电光调制器、滤波器、空腔谐振器的其他无源组件(例如波导光栅)或双折射滤波器的集成微芯片系统。
本发明进一步构思了集成进“空间分散”的空腔谐振器的微芯片激光器,用来实现从单频到极宽频带范围内的并工作在多线方式的可容易地再设计的、灵活的激光器模块。
本发明的优点将由下面提供的附图和详细说明来进一步评价。
附图说明
通过参考下面的说明和附图,将会得到并更详细地理解这里所描述的本发明的特征和其他明显的特点。附图是本说明书的一部分。但是,需要说明的是,附图只是阐述本发明的示范性实施方式,因而不能认作是对其范围的限制,因为本发明可容纳其他相同效果的实施方式。
图1是依据本发明的一种用于生产跃迁方式掺杂晶片的三阶段方法实施例的流程图,该晶片可以进一步被切割成多个微芯片激光发射单元。
图2是依据本发明制备的Cr2+:ZnS(A)和Cr2+:ZnSe(C)晶体在300K下检测、并以横截面单位绘制的室温吸收和发射光谱曲线图,以及相应的发射寿命和温度的关系图(B,D)。
图3是依据本发明制备的Cr2+:CdS(A)和Cr2+:CdSe(C)晶体在300K下检测、并以横截面单位绘制的室温吸收和发射光谱曲线图,以及相应的发射寿命和温度的关系曲线图(B,D)。
图4是在Cr2+:ZnS晶体中的基态吸收饱和曲线图。图中实线是用Frantz-Nodvic公式计算得到的结果。
图5是用作Cr2+:ZnS增益开关激光发射的实验性的无选择性半球形空腔谐振器的方框图。
图6是在具有10%输出耦合器的半球形空腔谐振器中,Cr2+:ZnS增益开关激光器的输出—输入能量曲线图。所测得的斜度效率为9.5%。
图7是用于Cr2+:ZnS可调增益开关激光发射的、带有CaF2棱镜色散元件的、实验性的有选择性半球形空腔谐振器的方框图。
图8是采用CaF2棱镜选择器的Cr2+:ZnS的调谐曲线图。该调谐受到可得到的空腔谐振器光学装置的涂层的限制。目前可得到从2050nm至2800nm的调谐。
图9是在外部半球形空腔谐振器中,在铒(Er)光纤激光器激发下,Cr2+:ZnS连续波激光发射的实验装置的结构简图。
图10是在1.55μm铒光纤激光器泵激下,在半球形空腔谐振器中,Cr2+:ZnS连续波激光器在采用不同的输出耦合器时的输出—输入性能曲线图;用(●)代表T=20%,和用(■)T=2%代表相应于最小阈值的调整;用(▲)T=2%代表调整到最大输出功率。
图11是没有镜面沉积在晶体的面上的Cr2+:ZnS和Cr2+:ZnSe增益开关微芯片激光器的结构简图。
图12是没有镜面沉积在晶体的面上的ZnSe增益开关微芯片激光器的输出—输入能量曲线图。(▲和●代表晶体上不同的激发地点)
图13是微芯片组合中,在铒光纤激光器激发下,Cr2+:ZnS和Cr2+:ZnSe连续波激光发射的实验装置结构简图。
图14是在1.55μm铒光纤激光器泵激下,Cr2+:ZnS和Cr2+:ZnSe连续波微芯片激光器的输出—输入性能曲线图。
图15是在1.55μm铒光纤激光器泵激下,最佳化的Cr2+:ZnS连续波微芯片激光器的输出—输入曲线图。
图16分别是Cr2+:ZnS和Cr2+:ZnSe晶体的微芯片激光器(A)和耦合空腔谐振器(B)微芯片激光器(带有外部标准具)的模场结构图。
图17结合Cr2+:ZnS(红色)和Cr2+:ZnSe(绿色)激光器的辐射输出在距离输出激光器表面L=300mm处的空间分布曲线,提供了用于测量微芯片输出光束发散的实验装置的结构简图。
图18是由孤立元件组成的、用来实现从单频到极宽频带范围的并工作在多线方式的可容易地再设计的、灵活的激光器模块的“空间分散”空腔谐振器的结构简图。
图19是芯片大小的集成多线TM:II-VI激光器的结构简图。
具体实施方式
在优选的实施方式中,Cr2+:ZnS晶体按照图1中描述的流程图由三阶段方法制备而得。在第一阶段,利用碘气体传输方法通过化学传输反应由气相合成未掺杂的单晶,该合成最好在一个放置于两个加热区的炉子上的、直径为20mm、长度为200mm的石英管内进行。通过共同引燃最初的组成成份而得到作为原料的粉末。原料区和结晶区的温度分别接近1200℃和1100℃。I2的浓度在2~5mg/cm3的范围内。将光学高质量的无定向的结晶块(最好取Ф2xcm3)切割并磨成5×5×3mm尺寸的厚片。
在第二阶段和第三阶段,将铬(或其他过渡金属)引入到晶体基片中是利用从一沉积薄膜的热扩散(第三阶段)来完成的,其中该沉积薄膜可优选使用脉冲激光器沉积方法(第二阶段)来得到。也可以使用等离子溅射或其他的薄膜沉积方法来得到。热退火可以在优选压力约10-5托(torr)、温度接近830℃~1100℃、时间3~20天的条件下,在密封的细颈瓶中进行。在某些需要更有效地热扩散的情况下,上述过程可以在幅度为1~30kV/cm的电场的同时作用下进行,电场的正极施加到Cr膜上,而电场的负极施加到沉积在晶片的相反表面的Ag电极上。然后,可以得到厚度为1~3mm和最大孔径为5mm的抛光样品。
图2A和2C中.以横截面单位分别给出了被研究的Cr2+:ZnS和Cr2+:ZnSe晶体的室温吸收和荧光光谱。吸收光谱用一个(ShimadzuUV-VIS-NIR-3101PC)分光光度仪来检测。荧光光谱用一个(ActionResearch ARC-300i)分光计和一个耦合到放大器(Perry PA050)的液氮冷却的(EGG Judson J10D-M204-R04M-60)InSb检测仪来检测。这种InSb检测仪—放大器组合的特征在于瞬时分辨率为0.4μs。考虑到记录系统的光谱敏感度,利用卤化钨校准灯(Oriel-9-2050)对荧光光谱加以校正。我们使用调制在800Hz的连续波铒掺杂光纤激光器(IPG Photonics,ELD-2)作为激发源。值得注意的是,Cr2+:ZnSe晶体并不表现出任何吸收对极化的依赖性,而在室温下,由于Cr:ZnS的吸收和荧光光谱对于极化的依赖性所造成的差异不超过10%。这使得我们在一阶近似下,可将所研究的晶体以光学上各向同性来进行处理。
对于晶体发光动力(kinetics)的测量,是利用D2和H2拉曼位移(Raman-shifted)Nd:YAG激光器在1560和1907nm波长上的激发,在一个宽的温度范围内取波长为1950,2100,2400和2600nm进行的。当检测精度在0.4μs以内时,对于在不同波长下的激发和配对(registration)的发光寿命并没有差异。图2B显示了:在14°K和300°K之间,ZnS的发射寿命只有轻微的下降,即从5.7秒降到4.3秒,而对于ZnSe(图2D),发射寿命实际上没有变化。这表明在300°K以下的淬熄并不是很要紧的。
利用Fuchtbauer-Ladenburg公式,从荧光强度信号I(λ)可得到自发发射截面积σcm(λ)(图2A和2C):
这里,A是从上能级的自发发射概率,n是折射率。
为了由“吸收光谱”得到吸收截面的大小,需要知道Cr2+的浓度。但是,不幸的是,在扩散掺杂时,掺杂剂的绝对浓度既不是均匀的,也不能准确地知道。因此我们使用宽带跃迁的互易方法:
利用已知基态和上能级的简并度分别为g1=3和g2=2,结合测量出的吸收光谱来计算图2A和2C中的吸收截面。这里EZFL是相应跃迁的零声子线的能量,k是波兹曼(Boltzmann)常数,以及T是温度。我们同样假设上下能级的Jahn-Teller分裂能够被忽略,因为它在室温下小于或与kT相当。我们得到的Cr2+:ZnS在波长为1690nm时最高吸收截面的峰值为σc=1.6×10-18cm2,这与在现有技术中已知且使用吸收系数和已知的Cr2+密度而得到的值σc=1.0×10-18cm2相当吻合。
图3显示了按本发明制备的Cr2+:CdS(A)和Cr2+:CdSe(C)晶体在300K下检测、并以横截面单位绘制的室温吸收和发射光谱的类似的曲线图,以及相应的发射寿命和温度的关系曲线图(B,D)。
TM:II-VI晶体的一种重要的潜在应用就是固体激光器谐振器的无源Q-开关(例如用于铒:玻璃(Er:glass)激光器无源Q-开关的Cr2+:ZnS晶体)。关于Cr2+:ZnS吸收饱和性的实验是在1.56μm的激发下进行的。使用了一个D2-拉曼位移(Raman-shifted)YAG:Nd激光器发出的辐射,其脉冲持续时间为5ns,脉冲能量最高为20mJ和重复率为10Hz。利用一个厚度为2.5mm、初始透射率为T=0.43的Cr2+:ZnS晶体,在1.56μm时进行饱和实验。通过一个26.5cm的透镜将泵激辐射聚焦在样品上,通过对样品进行Z-扫描的方式测出晶体传输率作为泵激能量密度函数的依赖关系。泵激辐射的空间能量分布由标准的刀口法测定。泵激光束的有效半径在辐射的最大泵激密度的0.5处测得。
从图4可以看到,当泵激能量流量由W=0.8×1018光子/cm2增加至W=6.7×1018光子/cm2时,受激吸收的变化大于1.4倍。由于泵激脉冲持续时间(5ns)要远远短于Cr2+:ZnS可饱和吸收体的弛豫时间(4.5μs),饱和行为可根据能量流量和对于四级水平缓慢吸收体的修正的Frantz-Nodvik公式来分析。按照这个公式,晶体的传输率是按如下所示依赖于泵激的能量流量“W”和吸收截面的:
其中z=Wσabr,T0为在W=0时的最初的晶体跃迁,以及σabs为吸收截面(cm2)。公式(3)用数字解出,根据与实验结果的最佳适配(图4,实线),σabs的值(λ=1.56μm)被估算为0.7×1018cm2。考虑到在1.56μm时和在最大吸收带(λ=1.7μm,见图2)的吸收率,最大吸收截面被确定为1.4×1018cm2,这个值与当前从分光镜测量的研究中估算出的截面值有着很好的吻合。
晶体中Cr2+的浓度是3.5×1018cm-3。由分光镜确定的σabs值和饱和测量而确定的σabs值的极好的一致性表明,对于Cr2+:ZnS,在波长为1.56μm和波长为铒:玻璃激光器的振荡波长(1.54μm)时的受激态吸收损失是可以忽略的。因此,与铒:玻璃的7×10-21cm2的吸收截面相比,Cr2+:ZnS晶体在波长1.56μm处,具有相对高的0.7×10-18cm2的吸收截面。这个值比现有技术中已知的Cr2+:ZnSe的0.27×10-18cm2截面值实际上要大两倍,结合可忽略的受激态吸收损耗,这就揭示了:Cr2+:ZnS晶体用作铒:玻璃激光器空腔谐振器的可饱和吸收体的极有前途的可能用途。除此之外,将带有沉积于其表面的二向色镜的Cr2+:ZnS晶体应用于固体激光器的Q开关和模式锁定上也是具有优势的。这些镜子被认为在固体激光器(例如铒:玻璃激光器)的振荡波长上是透明的,而在Cr2+:ZnS发射激光的区域内是能够反射的。在这个耦合空腔谐振器结构中,Cr2+:ZnS元件将同时可当作无源Q开关或锁模元件、可当作固体激光器的负载和当作一激光发射元件。由于在Cr2+:ZnS中的受激过程,可以料想Cr2+:ZnS受激能级粒子数减少的有效时间将要远远快于惯常的没有耦合空腔谐振器的设置。这将导致在Q开关状态中较短的脉冲时间,甚至导致锁模运行的可能。
图5描述了用作Cr2+:ZnS增益开关激光发射的实验性的无选择性半球形空腔谐振器的方框图。激光器实验是使用由D2拉曼(Raman)单元输出的1.5607μm的光而进行的,该拉曼单元由Nd:YAG激光器发出的1.064μm的光以反向散射的几何形状泵激。一个光学二极管置放在拉曼单元之前,用于防止因放大了的反向散射的1.06μm光辐射而可能造成的Nd:YAG激光器光学装置的损坏。来自拉曼单元的泵激脉冲在半最大值全宽度(FWHM)下的脉冲持续时间为5ns;输出能量达到100mJ,并且被半波片和Glan棱镜的组合连续衰减。泵激脉冲的振幅稳定性在5%左右。半球形空腔谐振器包括沉积在ZnS晶体面上的输入镜和曲率半径为20cm的输出镜。输出镜或者在2.05~2.5μm的光谱区域内具有10~20%的透射率,或者在1.95~2.5μm的光谱区域内具有20~30%的透射率。两个镜子都在2.360μm处具有峰值反射率。空腔谐振器的长度为18.5cm。泵激辐射通过置放于晶体前方22.5cm处的26.5cm透镜聚焦在晶体上,提供了泵激焦散面和空腔谐振器模场尺寸(200μm)的良好匹配。采用厚度为1.7mm的低掺杂样品(在1.7μm时为3~4cm-1)。晶体的第二个晶面在发射激光的区域内涂覆有防反射(AR)材料,它对于泵激波长是全反射的,从而提供了一个双通的泵激系统。一Ge滤波器用来把残余的泵激光和Cr2+:ZnS激光束分开。
当使用R2.360μm=90%的输出耦合器时,室温激光器的工作是在阈值为170μJ以及相对于泵浦能量的斜度效率为9.5%的情况下实现的。激光器具有大约为90nm(半最大值全宽度FWHM)的输出线宽,其中心在2.24μm处,并且最大输出能量可达到100μJ。图6描述了在半球形空腔谐振器中Cr2+:ZnS增益开关激光器输出一输入能量曲线图。进一步地增加泵激功率会导致输入镜面的光学损害。扩散型掺杂Cr2+:ZnS晶体的激光器性能可以通过优化晶体质量、掺杂技术和优化输出耦合器而得到改进。
带有R2.360μm=80%的反射镜的激光器发射是在阈值为250μ下实现的。这就可以应用Findlay-Clay计算法来计算空腔谐振器内的损耗。当晶体长度为1.7mm且σabs=0.8×10-18cm2时,计算得到的空腔谐振器内的损耗为14.7%。可以认为,这也可通过优化晶体制备技术而得到改进。
在图7所示的波长调谐实验中,使用了一长度为19.7cm的半球形空腔谐振器。波长调整是通过使用放置在离输出耦合器5cm处、作为色散元件的CaF2布鲁斯特(Brewster)棱镜来实现的。聚焦透镜和晶体保留在非选择性空腔谐振器中所采用的位置上。输出耦合器为用在非选择性空腔谐振器内的20cm,R2.360μm=90%的反射镜。这种设置提供了空腔谐振器的腰部与晶体中泵激光束的光点(约200μm)的极好匹配。
泵激源工作在1.5607μm波长上,它在TEM00模式中的脉冲功率大约为600μJ,脉冲持续时间约为5ns。这种泵激能量比临界泵激能量水平要大三倍左右。Cr2+:ZnS激光器的输出通过CaF2透镜被引导到一个0.3m“SpectroPro”单色仪,此单色仪带有用于波长检测的PbS检测仪。图8展示了在2.05~2.40μm光谱区域上实现的连续的波长调节。
铬激光的振荡输出具有大约30nm(半最大值全宽度FWHM)的线宽。可调输出的峰值效率是以2.25μm为中心的。调节上的受限是由于空腔谐振器光学器件的涂层,而不是由于Cr2+:ZnS晶体的发射光谱。使用适当的宽带涂层,有可能将调节范围增加到1.85~2.7μm。
借助于Littrow或Littman设置的光栅调谐腔,可以使激光器的输出线宽进一步变窄。
图9描述了在外部半球形空腔谐振器中,在铒光纤激光器激发下,Cr2+:ZnS连续波激光发射的实验装置的结构简图。泵激源是一掺铒光纤激光器(ELD-2,IPGPhotonics)。该激光器发射出2W的、波长为1550nm的单模连续波非偏振辐射光,并且装备了一光隔离器,用以防止来自ZnS和ZnSe激光器系统的任何可能的反馈。光纤纤心的直径为5μm。对于外部的非选择性谐振器激光器实验,半球形空腔谐振器包括有平的输入镜和半径为20cm的输出镜。输入镜晶体在2.2~2.5μm的光谱范围内具有99.5%的反射率。输出镜或者在2.2~2.5μm的光谱范围内具有2~20%的透射率,或者在1.95~2.5μm的光谱范围内具有20~30%的透射率。两个输出镜都在2.360μm波长上具有峰值的反射率。厚度为1.1mm、在泵激波长上的吸收系数为5cm-1的、涂覆有抗反射膜的掺铬ZnS晶体被采用。为了有效地散热,所述晶体被安放得使之与由YAG晶体制成的输入平面二向色镜接触。掺铒光纤激光器的泵激辐射首先由一显微镜的物镜准直为直径1mm的平行的光线锥,然后利用第二个焦距为15mm的物镜通过输入镜聚焦在晶体上。当空腔谐振器被调节到最小的阈值和最大的输出功率时,输出激光的参数是不同的。图10描述了在铒光纤泵激下,对于两种不同的输出耦合器和对于调节至最小阈值和最大输出功率的不同的空腔谐振器调节,ZnS:Cr2+连续波激光发射的输出-输入关系。
对于输出耦合器的透射率为2%和20%的时,测量得到的最小阈值分别为100mW和200mW的被吸收泵激能量。实验曾展示了:当输出耦合器的透射率为2%、被吸收的泵激能量为0.6W、将输出功率调到最大时,在波长2370nm附近的输出功率为63mw。在这个实验中,相对于被吸收的泵激能量的最大斜度效率“η”为18%。根据Findley-Clay的分析,在空腔谐振器中往返的无源损耗“Ld”可估计为3.7%。根据Caird关于斜度效率倒数相对于输出耦合倒数的分析,所研究晶体的极限斜度效率可利用下面的公式估计为51%:
其中,η是斜度效率,η0是极限斜度效率,T是镜面的透射率。该数值接近所研究晶体的量子数亏损65%。
图11描述了没有反射镜沉积在其晶体面上的Cr2+:ZnS和Cr2+:ZnSe增益开关微芯片激光器的结构简图。增益开关微芯片激光器的实验是用掺杂Cr2+的ZnSe和ZnS进行的。所用晶体的厚度为0.5~3mm,且具有抛光了的但未涂覆的平行面,并且在1.77μm处具有k~6cm-1的吸收系数。泵激来自工作在10Hz的D2拉曼移位Nd:YAG激光器的1.56μm波长的输出,其脉冲持续时间约为5ns,光束直径为1.5mm。图12显示了对于不同的激光发射地点的脉冲ZnSe微芯片激光发射的输出-输入能量关系曲线。输入能量阈值被发现为7mJ。当正反馈仅由于Fresnel反射而产生时,对于没有反射镜的微芯片得到了6.5%的最大斜度效率和1mJ的最大输出能量。自激激光器输出的光谱范围是从2270nm到2290nm。
图13描述了微芯片组合中,在铒光纤激光器激发下,Cr2+:ZnS和Cr2+:ZnSe连续波激光发射的实验装置结构简图。对于微芯片激光器实验,既研究了Cr2+:ZnS晶体,也研究了Cr2+:ZnSe晶体。晶体分别被抛光成平坦而且平行的(约10”的平行度)1.1mm和2.5mm的厚度。镜面直接被沉积在激光发射材料薄晶片的平行抛光面上。输入和输出二向色镜分别在2300~2500nm光谱范围内具有0.01和3.5%的透射率,它们在1550nm的泵激波长上的透射率为75%。使用了两种不同的泵激设置。第一种设置与在半球形空腔谐振器中Cr2+:ZnS连续波激光发射的泵激条件是相同的,即:掺铒光纤激光器的泵激辐射首先通过显微物镜校准成直径为1mm的平行的光线锥,然后利用焦距为15mm第二物镜通过输入镜面聚焦在晶体上。第二种泵激设置借助于将微芯片激光器安装在离泵浦掺铒光纤激光器的末端很接近的距离(约20um)上,因而不需要任何额外的光学元件。在这两种情况下,凭借造成一强的正透镜并提供了微芯片空腔谐振器的有效稳定状态,相当大的ZnS和ZnSe晶体折射率温度导数的值(比YAG晶体大大约5倍)起了建设性的作用。图14显示了作为被吸收的泵激功率的函数而绘制的Cr2+:ZnS和Cr2+:ZnSe微芯片激光器的输出功率。
在泵激光束被聚焦的设置中,对于Cr2+:ZnS微芯片激光器,实现了120nW的激光器阈值和53%的相对于被吸收泵激功率的斜度效率。高的、接近于理论阈限65%的微芯片激光器的斜度效率,显示了所用晶体的良好质量。如图15所示,优化了的Cr2+:ZnS微芯片激光器的最大输出功率达到了150mW。
对于ZnSe微芯片在泵激光束被聚焦的设置中的情况,实验显示了190mW的激光器阈值和20%的相对于被吸收的泵激功率的斜度效率。最大输出功率达到100mW。
对于第二种泵激设置,当微芯片激光被直接耦合到光纤末端时,对于Cr2+:ZnS和Cr2+:ZnSe微芯片激光器,得到的激光器阈值分别为150mW和240mW,而相对于被吸收的泵激功率的斜度效率分别为36%和14%。与泵激光束被聚焦的设置相比,Cr2+:ZnS微芯片激光器的最大输出功率实际上没有变化,而Cr2+:ZnSe微芯片激光器的最大输出功率以1.6的因子下降了。这可以由在ZnSe微芯片的在模场尺寸和泵激光束轮廓中,过分的长度和相应的不匹配来解释。
对于ZnS和ZnSe微芯片激光器,自激激光器的输出光谱分别覆盖2280~2360和2480~2590的光谱范围。在最大的泵激功率下,Cr2+:ZnSe激光器的输出光谱包括有超过100个的具有自由光谱范围Δv=0.8cm-1的轴向模。微芯片激光器的典型输出光谱在图16中用“A”指示出。由于较小的晶体厚度,Cr2+:ZnS微芯片激光器的自由光谱范围是Δv=2cm-1,且输出光谱包括大约50个轴向模。我们试图借助于一个耦合空腔谐振器装置和一个附加的外部反射镜,来对微芯片激光器的模式加以控制。耦合的微芯片和反射镜产生了如图16中“B”所指示出的光谱结构。在这些实验中,对于两个激光器,轴向模的数量都减少到18~24个(图16B中每一条线包括3个纵向模)。利用一个窄带输出耦合器,在双空腔谐振器的配置中,可以更进一步减少到单个纵向模的振荡。该实验表明,利用一个有选择性的输出耦合器,结合外部标准具,实现微芯片以单一纵模发射激光是可行的。
图17结合Cr2+:ZnS(红色)和Cr2+:ZnSe(绿色)激光器的辐射输出在距离输出激光器表面L=300mm处的空间分布曲线,显示了用于微芯片输出光束发散测量的实验装置的结构简图。正如可以看到的,对于Cr2+:ZnS激光器检测到了18毫拉德(mrad)强度剖面的半最大值全宽度(FWHM)。它稍小于对于Cr2+:ZnSe激光器测得的值(25毫拉德)。计入决定空腔谐振器稳定性的热效应,其发散性上的差异可以由Cr2+:ZnS晶体中的dn/dT较低(在ZnS中为+46×10-6K-1,而在ZnSe中为+70×10-6K-1)来解释。
被提议的对于超宽带/多波长(SBML)系统的研究是基于在单一激光器空腔谐振器中不同波长的空间分离。关于这些,特将美国专利No.5,461,635和6,236,66给出的指教收编在此作为参考。激光发射器的基本光学配置如图18所示。
激光器的工作如下。从激光发射介质的空间上分离的通路发射出的光经过腔内透镜进入偏离轴线的模式抑制元件孔隙A,它与在空间上被滤波的泵激光一起将增益波导的激发区分成若干个通路,并从单个通路的被放大了的发射光中仅仅分离出那些与谐振器轴线平行的部分。这部分被分离出来的光线在衍射光栅上衍射。Littrow支架光栅作为在自动校准方法中的第一级衍射回射器工作,将部分辐射光线反射回孔隙。偏离轴线的模式抑制元件孔隙反过来从衍射光中提取出具有主激光器模式的光线。偏离光轴的二阶激光器模式从产生激光的过程中被排除。因此,孔隙应该同时为空腔谐振器中现存的所有通路选择出基本的横向模。每个都有不同的波长的、具有主激光器模式的光线,通过聚焦透镜准直并导回到激光发射介质上。如图18所示,空腔谐振器的光学元件在激光发射元件的激发区中维持了不同的增益通路,减少了交叉干扰,抑制了模式竞争,并迫使每一个通路以特定的稳定的波长发射激光。该方法实现了一种激光器结构,这种激光器可以发射多个窄的光谱线,这些光谱线可以在增益介质的放大光谱内很容易地被处理成任何预先设定的光谱组成。我们相信过渡金属掺杂(TM)的II-VI基质,特别是具有宽放大光谱的掺杂铬的ZnS和ZnSe晶体,是发射超宽带和多谱线激光的理想激光发射介质。
有不同的方法可以提供II-VI微芯片激光器的单一纵模工作,该II-VI微芯片激光器与外部标准具空腔谐振器相耦合,且与窄带输出耦合器、光纤光栅对接耦合、外部光栅、混合耦合的相位阵列(多路)信号分离器以及波导光栅反射镜相结合工作。
图19进一部显示了芯片大小的多线的TM:II-VI激光器的集成。集成的光学芯片在II-VI基片上制成。芯片由几部分组成。右边的部分具有蚀刻在II-VI基片上的多个V形凹槽,用来和光纤激光器或光纤耦合二极管激光器相连接。中间的部分由多个波导(例如由离子交换或脊形效应技术制成)组成,用于向激光发射部分传送泵激光。激光发射部分包括多个掺杂有二阶过渡金属离子(TM2+)的II-VI波导,并能进一步与诸如锥形光栅那样的色散元件相结合。锥形光栅可通过例如用紫外线(UV)的干涉图型对激光发射波导曝光而制成。锥形光栅的使用提供了对于引起振荡的多频的每个单独的激活波导,和对于不同波长光的回复反射的自动准直方法。由于II-VI材料的电光性能,就有可能将Mach-Zehnder或电-反射内部调制器与同一波导的激光发射部分(图中未示出)集成在一起。输出多频辐射光可被耦合到输出光纤中。
在一个结合有激活介质、声光或声光调制器、滤波器、空腔谐振器的其它无源组件的集成芯片系统中,利用II-VI晶体的声光、声光、光电折射和双折射特性的其他可能的方案是很多的。
尽管我们的发明已经以各种各样的方式进行了公开,这种公开不能被认为将本发明只限制为这些方式,更确切地,本发明应该以权利要求的保护宽度作为限制。
Claims (34)
1.一种构建并使用过渡金属掺杂的激光介质的方法,其特征在于包括以下步骤:
a.形成足够厚度的晶体用于作为微芯片激光发射材料,该晶体选自MeX2Z4和MeZ的结构,其中Me选自由Zn,Cd,Ca,Mg,Sr,Ba,Hg和Pb组成的集合;Z选自由S,Se,Te,O和它们的混合物组成的集合;以及X选自由Ga,In和Al组成的集合;
b.以选自由脉冲激光沉积、阴极电弧沉积和等离子溅射方法组成的集合中的一种方法,在所述晶体的相对面上沉积一过渡金属薄膜层;
c.在足以使得所述晶体在其选定的区域内通过过渡金属扩散和置换实现掺杂的一定温度下和一定时间内,将所述晶体在一炉子中退火。
2.权利要求1所限定的方法,其特征在于:在所述退火步骤期间,横跨所述晶体建立一个电场,用以促进所述过渡金属的扩散。
3.权利要求1或2所限定的方法,其特征进一步在于:在晶体掺杂后抛光所述晶体的面。
4.权利要求3所限定的方法,其特征在于:Me选自由Zn和Cd组成的集合。
5.权利要求4所限定的方法,其特征在于:Z选自由S,Se和Te组成的集合。
6.权利要求3所限定的方法,其特征在于:晶体是ZnS而过渡金属是Cr++。
7.权利要求3所限定的方法,其特征在于:所述晶体具有小于大约3.0毫米的厚度。
8.权利要求3所限定的方法,其特征在于:所述时间范围在3天到20天之间并且所述温度为大约830℃到大约1100℃。
9.权利要求3所限定的方法,其特征在于:所述掺杂只在靠近所述晶体面的限定的区域内发生。
10.权利要求3所限定的方法,其特征在于:通过改变扩散梯度,所述掺杂在横跨过所述晶体的宽度上是有变化的,以使得在所述晶体中造成过渡金属置换的有变化的浓度。
11.权利要求3所限定的方法进一步包括接在所述退火步骤以后,在所述晶体的所述面上沉积镜面。
12.权利要求8所限定的方法进一步包括将所述晶体分割成多个微芯片大小的单元,所述单元具有一在相对面上有反射镜的TM:MeZ晶片。
13.权利要求9所限定方法,其特征在于:每一个微芯片大小的单元在所述TM:MeZ晶片内已规定了一掺杂浓度梯度。
14.权利要求3所限定的方法进一步包括将所述晶体分割成为多个微芯片大小的、具有一TM:MeZ晶片在内的单元,该TM:MeZ晶片具有对立的、高抛光的、相当平行的、用以提供内反射的面。
15.权利要求14所限定的方法进一步包括将所述的微芯片大小的单元中的至少一个固定在在含有一激励二极管的半导体上。
16.权利要求14所限定的方法进一步包括向所述晶体提供连续波激发能量的步骤,用来激发连续波的激光输出。
17.权利要求14所限定的方法进一步包括向所述晶体提供脉冲的激发能量,用来激发脉冲的激光输出。
18.一种激光器,其特征在于,以权利要求3所述构建的激光介质,其中所述激光介质具有置放在其每一面上的包括一输出镜的二向色镜,以及一个被放置来向所述激光介质提供连续波激发能量的连续的激发源,用于激发连续的激光输出。
19.以按权利要求18构建的激光介质为特征的激光器,其特征在于:所述激光介质是一微芯片。
20.以按权利要求3构建的激光介质为特征的激光器,其特征在于:包括一个被放置来向所述激光介质提供被泵激的激发能量的泵激激发源,用以激发被泵激的激光输出。
21.以按照权利要求20构建的激光介质为特征的激光器,进一步包括一套放置在所述晶体对立面上的二向色镜。
22.以按权利要求3构建的激光介质为特征的激光器,其特征在于,所述激光介质是设置在半导体上的微芯片,并且微芯片进一步包括用于向所述激光介质提供激发能量的激发源。
23.权利要求22所述的激光器,其特征在于,激光介质含有在大约1018cm-3到1020cm-3之间的Cr2+浓度。
24.权利要求22所述的激光器,其特征在于,激光介质是由一铒:玻璃光纤激光器的输出而激发的,并且具有在大约2110至大约2840nm范围上的可调的输出。
25.权利要求22所述的激光器,其特征在于,所述激光器具有在大约2110和大约2840nm之间可调的输出。
26.权利要求22所述的激光器,其特征在于,所述激光介质被耦合到与窄带输出耦合器相结合的外部标准具空腔谐振器。
27.权利要求22所述的激光器,其特征在于,所述激光介质与光纤光栅对接耦合。
28.权利要求22所述的激光器,其特征在于,所述激光介质被耦合到外部光栅。
29.权利要求22所述的激光器,其特征在于:所述激光介质被混合地耦合到相位阵列的多路信号分离器。
30.权利要求22所述的激光器,其特征在于:所述激光介质被耦合到波导光栅反射镜。
31.权利要求22所述的激光器,其特征在于:所述激光介质被耦合到与空间上分散的空腔谐振器用以产生多频的或超宽带的输出辐射。
32.权利要求22所述的激光器,其特征在于:所述激光介质是与空腔谐振器的其他无源组件一起以芯片尺寸被集成在II-VI波导上。
33.权利要求32所述的激光器,其特征在于:所述激光介质进一步与电光调制器一起以芯片尺寸被集成在II-VI波导上。
34.一种利用按照权利要求3构建的激光介质的可饱和的吸收体材料进一步包括一套放置在所述晶体的对立的面上的二向色镜。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US32355101P | 2001-09-20 | 2001-09-20 | |
US60/323,551 | 2001-09-20 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN1589513A true CN1589513A (zh) | 2005-03-02 |
Family
ID=23259696
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNA028229487A Pending CN1589513A (zh) | 2001-09-20 | 2002-09-19 | 中红外微芯片激光器:带有可饱和吸收材料的ZnS:Cr2+激光器 |
Country Status (6)
Country | Link |
---|---|
US (6) | US6960486B2 (zh) |
EP (1) | EP1436865B1 (zh) |
JP (1) | JP2005504437A (zh) |
CN (1) | CN1589513A (zh) |
CA (2) | CA2783176C (zh) |
WO (1) | WO2003026086A1 (zh) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102208749A (zh) * | 2011-04-15 | 2011-10-05 | 中国人民解放军国防科学技术大学 | 中、远红外双波段激光器 |
CN102264434A (zh) * | 2008-12-02 | 2011-11-30 | 塞拉莫普泰克工业公司 | 激光诱导蒸汽/等离子体介导的医疗过程及装置 |
CN103897692A (zh) * | 2014-03-31 | 2014-07-02 | 中国科学院上海光学精密机械研究所 | 过渡金属离子浓度渐变掺杂硫化锌或硒化锌及其制备方法 |
CN105204115A (zh) * | 2015-10-10 | 2015-12-30 | 浙江大学 | 一种基于对称金属包覆波导的中红外波段可调光延时器 |
CN107750411A (zh) * | 2015-03-23 | 2018-03-02 | Ipg光子公司 | 大功率cw中红外激光器 |
CN110082349A (zh) * | 2019-02-01 | 2019-08-02 | 南京师范大学 | 一种基于olci的内陆富营养化湖泊水体蓝藻生物量比例遥感估算方法 |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6960486B2 (en) * | 2001-09-20 | 2005-11-01 | University Of Alabama At Brimingham Research Foundation | Mid-IR microchip laser: ZnS:Cr2+ laser with saturable absorber material |
US7606274B2 (en) * | 2001-09-20 | 2009-10-20 | The Uab Research Foundation | Mid-IR instrument for analyzing a gaseous sample and method for using the same |
US8817830B2 (en) | 2002-09-19 | 2014-08-26 | The Uab Research Foundation | Saturable absorbers for Q-switching of middle infrared laser cavaties |
US7024066B1 (en) * | 2003-04-07 | 2006-04-04 | Luxtera, Inc. | Littrow gratings as alignment structures for the wafer level testing of optical and optoelectronic chips |
US7286573B1 (en) | 2004-08-12 | 2007-10-23 | United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration (Nasa) | Conversion of type of quantum well structure |
CN101233657A (zh) | 2005-07-28 | 2008-07-30 | 松下电器产业株式会社 | 激光光源和显示器装置 |
US7519253B2 (en) | 2005-11-18 | 2009-04-14 | Omni Sciences, Inc. | Broadband or mid-infrared fiber light sources |
US10278711B2 (en) * | 2006-02-27 | 2019-05-07 | Biomet Manufacturing, Llc | Patient-specific femoral guide |
EP2052445A4 (en) * | 2006-03-13 | 2014-05-07 | Uab Research Foundation | MEDIUM WIDELY ADJUSTABLE IR PIPES WITH ELECTRIC PUMPING BASED ON QUANTUM CONFINED TRANSITION METAL COATED SEMICONDUCTORS |
US7995631B2 (en) * | 2006-04-14 | 2011-08-09 | Raytheon Company | Solid-state laser with spatially-tailored active ion concentration using valence conversion with surface masking and method |
WO2008052161A2 (en) * | 2006-10-27 | 2008-05-02 | University Of Alabama At Birmingham Research Foundation | Saturable absorbers for q-switching of middle infrared laser cavities |
FR2971640B1 (fr) | 2011-02-16 | 2014-04-04 | Univ Bordeaux 1 | Dispositif de pompage optique. |
DE102011054024B4 (de) * | 2011-09-28 | 2014-10-09 | Deutsches Zentrum für Luft- und Raumfahrt e.V. | Infrarotlaserverstärkersystem |
US20170071695A1 (en) * | 2014-01-10 | 2017-03-16 | Riken | Medical laser light source system |
WO2016024877A1 (ru) * | 2014-08-13 | 2016-02-18 | Федеральное государственное бюджетное учреждение науки Институт химии высокочистых веществ им. Г.Г. Девятых Российской академии наук (ИХВВ РАН) | Способ получения легированных халькогенидов цинка |
US9768901B2 (en) * | 2014-11-20 | 2017-09-19 | Kaiam Corp. | Planar lightwave circuit active connector |
DE112017007786T5 (de) * | 2017-07-27 | 2020-05-14 | Canare Electric Co., Ltd. | Laserstrahlprofil-Messvorrichtung |
EP3680998B1 (en) * | 2017-09-05 | 2023-06-14 | National Institutes for Quantum Science and Technology | Laser device, light source, and measurement device |
US11947048B2 (en) | 2020-05-06 | 2024-04-02 | Waymo Llc | Crosstalk reduction for light detection and ranging (lidar) devices using wavelength locking |
CN113186602B (zh) * | 2021-04-29 | 2023-06-02 | 杭州光学精密机械研究所 | 一种Cr掺杂II-VI族化合物同质包边多晶激光材料及其制备方法 |
Family Cites Families (42)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3820896A (en) * | 1973-01-02 | 1974-06-28 | Singer Co | Velocimeter with improved signal to noise ratio |
US4070094A (en) * | 1975-08-25 | 1978-01-24 | The United States Of America As Represented By The Secretary Of The Navy | Optical waveguide interferometer modulator-switch |
US4097118A (en) * | 1975-10-30 | 1978-06-27 | Rca Corporation | Optical waveguide coupler employing deformed shape fiber-optic core coupling portion |
US4169009A (en) * | 1977-03-30 | 1979-09-25 | United Technologies Corporation | Large area microstructure processing |
US4124270A (en) * | 1977-03-30 | 1978-11-07 | United Technologies Corporation | Monolithic, three-dimensional infrared waveguide for high power lasers |
US4158207A (en) * | 1978-03-27 | 1979-06-12 | The United States Of America As Represented By The Secretary Of The Navy | Iron-doped indium phosphide semiconductor laser |
US4762382A (en) * | 1987-06-29 | 1988-08-09 | Honeywell Inc. | Optical interconnect circuit for GaAs optoelectronics and Si VLSI/VHSIC |
US4847138A (en) * | 1987-10-07 | 1989-07-11 | Corning Glass Works | Thermal writing on glass and glass-ceramic substrates |
US5070488A (en) * | 1988-06-29 | 1991-12-03 | Atsuko Fukushima | Optical integrated circuit and optical apparatus |
DE68914240T2 (de) * | 1988-10-21 | 1994-10-27 | Sony Corp | Optischer Wellenleiter und Generator zur Erzeugung der zweiten Harmonischen. |
US5009502A (en) * | 1989-04-20 | 1991-04-23 | Hughes Aircraft Company | System of holographic optical elements for testing laser range finders |
US4991926A (en) * | 1990-04-06 | 1991-02-12 | Litton Systems, Inc. | Integrated optics decorrelator |
US5488626A (en) * | 1991-01-14 | 1996-01-30 | Light Age, Inc. | Method of and apparatus for pumping of transition metal ion containing solid state lasers using diode laser sources |
US5321711A (en) * | 1992-08-17 | 1994-06-14 | Alliedsignal Inc. | Segmented solid state laser gain media with gradient doping level |
US5461635A (en) | 1993-04-02 | 1995-10-24 | Basiev; Tasoltan T. | Solid state laser with superbroadband or control generation spectrum |
US5379310A (en) * | 1993-05-06 | 1995-01-03 | Board Of Trustees Of The University Of Illinois | External cavity, multiple wavelength laser transmitter |
FR2708626B1 (fr) * | 1993-08-02 | 1998-06-05 | Director General Agency Ind | Film ultramince transparent et conducteur et procédé pour sa fabrication. |
US5428635A (en) * | 1994-01-11 | 1995-06-27 | American Biogenetic Sciences, Inc. | Multi-wavelength tunable laser |
GB9405613D0 (en) * | 1994-03-22 | 1994-05-11 | British Tech Group | Laser waveguide |
US5541948A (en) * | 1994-11-28 | 1996-07-30 | The Regents Of The University Of California | Transition-metal doped sulfide, selenide, and telluride laser crystal and lasers |
WO1997043806A2 (en) * | 1996-05-17 | 1997-11-20 | Uab Research Foundation | Semiconductor laser with a superbroadband or multiline spectral output |
FR2751480A1 (fr) * | 1996-07-19 | 1998-01-23 | Commissariat Energie Atomique | Microlaser solide a declenchement actif par semi-conducteur |
US5796771A (en) * | 1996-08-19 | 1998-08-18 | The Regents Of The University Of California | Miniature self-pumped monolithically integrated solid state laser |
US5832008A (en) * | 1997-01-24 | 1998-11-03 | Hughes Electronics | Eyesafe laser system using transition metal-doped group II-VI semiconductor as a passive saturable absorber Q-switch |
CA2282612A1 (en) * | 1998-09-18 | 2000-03-18 | Sumitomo Electric Industries, Ltd. | Photodiode module |
US6330388B1 (en) * | 1999-01-27 | 2001-12-11 | Northstar Photonics, Inc. | Method and apparatus for waveguide optics and devices |
US6297179B1 (en) * | 1999-10-18 | 2001-10-02 | Corning Incorporated | Transition-metal, glass-ceramic gain media |
US6326666B1 (en) * | 2000-03-23 | 2001-12-04 | International Business Machines Corporation | DTCMOS circuit having improved speed |
DE10102818A1 (de) * | 2001-01-23 | 2002-08-08 | Lohmann Therapie Syst Lts | Primärverpackungseinheit für mehrere vereinzelte Filmplättchen als Darreichungsformen |
CN1313656C (zh) * | 2001-03-02 | 2007-05-02 | 独立行政法人科学技术振兴机构 | Ⅱ-ⅵ族或ⅲ-ⅴ族系单结晶铁磁性化合物及其铁磁性特性的调整方法 |
US6869229B2 (en) * | 2001-03-16 | 2005-03-22 | Peregrine Semiconductor Corporation | Coupled optical and optoelectronic devices, and method of making the same |
GB2379747B (en) * | 2001-06-22 | 2003-08-27 | Bookham Technology Plc | Optical Chip with optic fibre alignment features |
US8817830B2 (en) * | 2002-09-19 | 2014-08-26 | The Uab Research Foundation | Saturable absorbers for Q-switching of middle infrared laser cavaties |
US7606274B2 (en) * | 2001-09-20 | 2009-10-20 | The Uab Research Foundation | Mid-IR instrument for analyzing a gaseous sample and method for using the same |
US6960486B2 (en) * | 2001-09-20 | 2005-11-01 | University Of Alabama At Brimingham Research Foundation | Mid-IR microchip laser: ZnS:Cr2+ laser with saturable absorber material |
WO2003032021A2 (en) * | 2001-10-09 | 2003-04-17 | Infinera Corporation | TRANSMITTER PHOTONIC INTEGRATED CIRCUITS (TxPIC) AND OPTICAL TRANSPORT NETWORKS EMPLOYING TxPICs |
US7751658B2 (en) * | 2001-10-09 | 2010-07-06 | Infinera Corporation | Monolithic transmitter photonic integrated circuit (TxPIC) having tunable modulated sources with feedback system for source power level or wavelength tuning |
US7672546B2 (en) * | 2001-10-09 | 2010-03-02 | Infinera Corporation | Optical transport network having a plurality of monolithic photonic integrated circuit semiconductor chips |
US7194016B2 (en) * | 2002-03-22 | 2007-03-20 | The Research Foundation Of The University Of Central Florida | Laser-to-fiber coupling |
GB2413004B (en) | 2003-02-03 | 2007-03-21 | Bae Systems Information | Method and apparatus for generating mid and long ir wavelength radiation |
US8288157B2 (en) * | 2007-09-12 | 2012-10-16 | Plc Diagnostics, Inc. | Waveguide-based optical scanning systems |
US7676122B2 (en) * | 2006-12-11 | 2010-03-09 | Jiahua James Dou | Apparatus, system and method for particle manipulation using waveguides |
-
2002
- 2002-09-19 US US10/247,272 patent/US6960486B2/en not_active Expired - Lifetime
- 2002-09-19 CN CNA028229487A patent/CN1589513A/zh active Pending
- 2002-09-19 WO PCT/US2002/029707 patent/WO2003026086A1/en active Application Filing
- 2002-09-19 CA CA2783176A patent/CA2783176C/en not_active Expired - Lifetime
- 2002-09-19 CA CA2461096A patent/CA2461096C/en not_active Expired - Lifetime
- 2002-09-19 JP JP2003529589A patent/JP2005504437A/ja active Pending
- 2002-09-19 EP EP02761727.3A patent/EP1436865B1/en not_active Expired - Lifetime
-
2005
- 2005-05-27 US US11/140,271 patent/US7548571B2/en not_active Expired - Lifetime
-
2009
- 2009-06-16 US US12/485,826 patent/US20100022049A1/en not_active Abandoned
-
2011
- 2011-12-01 US US13/309,496 patent/US8767789B2/en not_active Expired - Lifetime
-
2014
- 2014-07-01 US US14/321,553 patent/US9887510B2/en not_active Expired - Lifetime
-
2018
- 2018-01-30 US US15/884,271 patent/US20180175579A1/en not_active Abandoned
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102264434A (zh) * | 2008-12-02 | 2011-11-30 | 塞拉莫普泰克工业公司 | 激光诱导蒸汽/等离子体介导的医疗过程及装置 |
CN102264434B (zh) * | 2008-12-02 | 2016-02-03 | 拜欧利泰克投资二代公司 | 激光诱导蒸汽/等离子体介导的医疗过程及装置 |
CN102208749A (zh) * | 2011-04-15 | 2011-10-05 | 中国人民解放军国防科学技术大学 | 中、远红外双波段激光器 |
CN102208749B (zh) * | 2011-04-15 | 2012-06-27 | 中国人民解放军国防科学技术大学 | 中、远红外双波段激光器 |
CN103897692A (zh) * | 2014-03-31 | 2014-07-02 | 中国科学院上海光学精密机械研究所 | 过渡金属离子浓度渐变掺杂硫化锌或硒化锌及其制备方法 |
CN107750411A (zh) * | 2015-03-23 | 2018-03-02 | Ipg光子公司 | 大功率cw中红外激光器 |
CN107750411B (zh) * | 2015-03-23 | 2020-10-16 | Ipg光子公司 | 大功率cw中红外激光器 |
CN105204115A (zh) * | 2015-10-10 | 2015-12-30 | 浙江大学 | 一种基于对称金属包覆波导的中红外波段可调光延时器 |
CN105204115B (zh) * | 2015-10-10 | 2018-02-16 | 浙江大学 | 一种基于对称金属包覆波导的中红外波段可调光延时器 |
CN110082349A (zh) * | 2019-02-01 | 2019-08-02 | 南京师范大学 | 一种基于olci的内陆富营养化湖泊水体蓝藻生物量比例遥感估算方法 |
CN110082349B (zh) * | 2019-02-01 | 2021-11-02 | 南京师范大学 | 一种基于olci的内陆富营养化湖泊水体蓝藻生物量比例遥感估算方法 |
Also Published As
Publication number | Publication date |
---|---|
US20150333470A1 (en) | 2015-11-19 |
US20120224599A1 (en) | 2012-09-06 |
US8767789B2 (en) | 2014-07-01 |
WO2003026086A1 (en) | 2003-03-27 |
CA2461096C (en) | 2014-02-18 |
US6960486B2 (en) | 2005-11-01 |
EP1436865A4 (en) | 2005-12-28 |
CA2783176C (en) | 2014-05-20 |
US20050281301A1 (en) | 2005-12-22 |
US20180175579A1 (en) | 2018-06-21 |
JP2005504437A (ja) | 2005-02-10 |
US20030072340A1 (en) | 2003-04-17 |
EP1436865B1 (en) | 2019-06-05 |
EP1436865A1 (en) | 2004-07-14 |
US20100022049A1 (en) | 2010-01-28 |
CA2461096A1 (en) | 2003-03-27 |
CA2783176A1 (en) | 2003-03-27 |
US9887510B2 (en) | 2018-02-06 |
US7548571B2 (en) | 2009-06-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN1589513A (zh) | 中红外微芯片激光器:带有可饱和吸收材料的ZnS:Cr2+激光器 | |
Schweizer et al. | Spectroscopic properties and diode pumped 1.6 μm laser performance in Yb-codoped Er: Y3Al5O12 and Er: Y2SiO5 | |
Podlipensky et al. | Efficient laser operation and continuous-wave diode pumping of Cr2+: ZnSe single crystals | |
Elder et al. | Diode-pumped, room-temperature Tm: YAP laser | |
Akimov et al. | Efficient IR Fe: ZnSe laser continuously tunable in the spectral range from 3.77 to 4.40 μm | |
Akimov et al. | Efficient pulsed Cr2+: CdSe laser continuously tunable in the spectral range from 2.26 to 3.61 μm | |
CN105846302A (zh) | 一种新型的克尔透镜锁模Cr:ZnS飞秒激光器 | |
Thony et al. | 1.55 μm passive Q-switched microchip laser | |
Basiev et al. | Mid IR laser oscillations in new low phonon PbGa2S4: Dy3+ crystal | |
US5471493A (en) | Sc2+ based active crystalline luminescent media for laser systems tunable in UV-visible spectral range | |
US5640408A (en) | Quasi four-level Tm:LuAG laser | |
Chen et al. | Generation of coherent ultraviolet radiation in the 330 nm region by multiphoton excitation of sodium vapor | |
Graham et al. | Laser performance of Cr2+-doped ZnS | |
Koranda et al. | Cr: ZnSe laser pumped with Tm: YAP microchip laser | |
Liao et al. | Electronic excitation migration in neodymium pentaphosphate | |
Wagner et al. | High-efficiency, broadly tunable continuous-wave Cr2+: ZnSe laser | |
Volokitina et al. | Efficient laser operation in cleaved single-crystal plates of Yb: KY (MoO4) 2: A novel molybdate compound | |
Kisel et al. | Emission lifetime measurements and laser performance of Cr: ZnSe under diode pumping at 1770 nm | |
Mirov et al. | Mid-IR microchip laser: ZnS: Cr2+ laser with saturable absorber material | |
Doroshenko et al. | Tuning possibility of dysprosium-doped lead thiogallate laser | |
Urata et al. | Characterization of thulium-and holmium-doped YAG ceramic laser materials | |
Andronov et al. | Lasing of polycrystalline Cr2+: ZnSe pumped by a pulse-periodic Tm: YLF laser | |
CN117913642A (zh) | 一种抑制Ho3+掺杂激光晶体3μm波段激光跃迁自终止的方法 | |
CN116581634A (zh) | 激光二极管泵浦Pr3+:YLF晶体的实验装置和方法 | |
Jelínková et al. | Tunable Fe, Cr: ZnMgSe gain-switched mid-IR laser operating at room temperature |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
WD01 | Invention patent application deemed withdrawn after publication |