JPS6432674A - Electronic device including tunnel junction and manufacture thereof - Google Patents
Electronic device including tunnel junction and manufacture thereofInfo
- Publication number
- JPS6432674A JPS6432674A JP62178739A JP17873987A JPS6432674A JP S6432674 A JPS6432674 A JP S6432674A JP 62178739 A JP62178739 A JP 62178739A JP 17873987 A JP17873987 A JP 17873987A JP S6432674 A JPS6432674 A JP S6432674A
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- silicon layer
- tunnel junction
- crystal silicon
- film thickness
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 abstract 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 2
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 2
- 239000013078 crystal Substances 0.000 abstract 1
- 230000007547 defect Effects 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 238000007493 shaping process Methods 0.000 abstract 1
Landscapes
- Bipolar Transistors (AREA)
- Recrystallisation Techniques (AREA)
Abstract
PURPOSE:To reduce leakage currents at room temperature and high voltage, and to diminish the scattering loss of tunnel currents by forming a single crystal or a polycrystalline silicon layer, grain size of which extends over not less than the same extent as film thickness, onto a silicon oxide film on a single crystal silicon layer. CONSTITUTION:A tunnel junction is constituted by shaping a single crystal silicon layer 2 or a polycrystalline silicon layer, grain size of which extends over not less than the same extent as film thickness, onto silicon oxide films 3-1, 3-2 being formed onto a single crystal silicon layer 1 and having film thickness of 5-500Angstrom . The tunnel junction has sufficient height as 3.45eV. Consequently, the leakage of thermoelectrons can be stopped even at a temperature considerably higher than room temperature and at high voltage. Single crystal silicon boards are mutually joined and manufactured through heat treatment, thus extremely preventing the generation of trouble such as leakage currents resulting from defects such as pinholes, the ununiformity of operation, etc.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62178739A JPS6432674A (en) | 1987-07-17 | 1987-07-17 | Electronic device including tunnel junction and manufacture thereof |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62178739A JPS6432674A (en) | 1987-07-17 | 1987-07-17 | Electronic device including tunnel junction and manufacture thereof |
| JP8189687 | 1987-07-20 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6432674A true JPS6432674A (en) | 1989-02-02 |
Family
ID=26422880
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62178739A Pending JPS6432674A (en) | 1987-07-17 | 1987-07-17 | Electronic device including tunnel junction and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6432674A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6939623B2 (en) | 2000-12-19 | 2005-09-06 | Posco | High strength steel plate having superior electromagnetic shielding and hot-dip galvanizing properties |
-
1987
- 1987-07-17 JP JP62178739A patent/JPS6432674A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6939623B2 (en) | 2000-12-19 | 2005-09-06 | Posco | High strength steel plate having superior electromagnetic shielding and hot-dip galvanizing properties |
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