Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co LtdfiledCriticalNEC Corp
Priority to JP5068676ApriorityCriticalpatent/JPS52133763A/en
Publication of JPS52133763ApublicationCriticalpatent/JPS52133763A/en
PURPOSE: To obtain an insulating layer of a narrow width by utilizing the difference in the rate of impurity diffusion and the difference in the rate of melting between poly-Si and single crystal Si.
COPYRIGHT: (C)1977,JPO&Japio
JP5068676A1976-04-301976-04-30Production of semiconductor integrated circuit
PendingJPS52133763A
(en)