JPS6427257A - Cmos type standard cell - Google Patents

Cmos type standard cell

Info

Publication number
JPS6427257A
JPS6427257A JP62183905A JP18390587A JPS6427257A JP S6427257 A JPS6427257 A JP S6427257A JP 62183905 A JP62183905 A JP 62183905A JP 18390587 A JP18390587 A JP 18390587A JP S6427257 A JPS6427257 A JP S6427257A
Authority
JP
Japan
Prior art keywords
regions
wirings
wiring
external
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62183905A
Other languages
Japanese (ja)
Inventor
Koichiro Okumura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP62183905A priority Critical patent/JPS6427257A/en
Publication of JPS6427257A publication Critical patent/JPS6427257A/en
Pending legal-status Critical Current

Links

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To remove wasteful regions, and to reduce the area of a chip for an integrated circuit by forming an external wiring region between wirings in P-type and N-type transistor regions in a first metallic wiring layer and changing the space of the P-type and N-type transistor regions in response to the number of external wirings passing in the external wiring region. CONSTITUTION:A wiring 42 between transistor regions is shaped by wirings 41b, 41d in the transistor region formed to a first metallic wiring layer 4 and a wiring 51 between transistor regions shaped to a second metallic wiring layer 5, and the wiring between the transistor regions is not formed to the first metallic wiring layer 4. External wiring regions 6, 6a for shaping at least one of an external wiring 61 passing in the cross direction among wirings 41a, 41b in the P-type transistor region and wirings 41c, 41d in the N-type transistor region in the first metallic wiring layer 4 are formed, and a space between the P-type transistor region 1 and the N-type transistor region 2 is changed in response to the number of the formation of the external wirings 61. Accordingly, wasteful regions are decreased, and the area of a chip for an integrated circuit can be reduced.
JP62183905A 1987-07-22 1987-07-22 Cmos type standard cell Pending JPS6427257A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62183905A JPS6427257A (en) 1987-07-22 1987-07-22 Cmos type standard cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62183905A JPS6427257A (en) 1987-07-22 1987-07-22 Cmos type standard cell

Publications (1)

Publication Number Publication Date
JPS6427257A true JPS6427257A (en) 1989-01-30

Family

ID=16143866

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62183905A Pending JPS6427257A (en) 1987-07-22 1987-07-22 Cmos type standard cell

Country Status (1)

Country Link
JP (1) JPS6427257A (en)

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