JPS6426857U - - Google Patents
Info
- Publication number
- JPS6426857U JPS6426857U JP12133387U JP12133387U JPS6426857U JP S6426857 U JPS6426857 U JP S6426857U JP 12133387 U JP12133387 U JP 12133387U JP 12133387 U JP12133387 U JP 12133387U JP S6426857 U JPS6426857 U JP S6426857U
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- semiconductor device
- type semiconductor
- element type
- individual elements
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims description 9
- 239000002131 composite material Substances 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims description 3
- 230000004888 barrier function Effects 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- 230000000630 rising effect Effects 0.000 claims 1
- 230000017525 heat dissipation Effects 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Description
第１図は本考案実施例の構成を示す部分断面側
視図、第２図は第１図の平面図、第３図は従来構
成による複合素子型半導体装置の側面図である。 各図において、１：各素子共通な放熱用金属基
板、２：絶縁基板、２ａ：バリア部、３：チツプ
用放熱基板、４：個別素子としてのチツプ、５：
外部導出リード、６：はんだ接合層。
視図、第２図は第１図の平面図、第３図は従来構
成による複合素子型半導体装置の側面図である。 各図において、１：各素子共通な放熱用金属基
板、２：絶縁基板、２ａ：バリア部、３：チツプ
用放熱基板、４：個別素子としてのチツプ、５：
外部導出リード、６：はんだ接合層。
Claims (1)
- 共通な放熱金属基板の上に個々に絶縁基板を介
して複数の個別素子を並置実装した複合素子形半
導体装置において、前記絶縁基板が当該基板上に
実装した個別素子の周囲を包囲して基板の周縁よ
り立上がるバリア部を有する断面凹形基板と成し
たことを特徴とする複合素子形半導体装置。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12133387U JPS6426857U (ja) | 1987-08-07 | 1987-08-07 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12133387U JPS6426857U (ja) | 1987-08-07 | 1987-08-07 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6426857U true JPS6426857U (ja) | 1989-02-15 |
Family
ID=31368244
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12133387U Pending JPS6426857U (ja) | 1987-08-07 | 1987-08-07 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6426857U (ja) |
-
1987
- 1987-08-07 JP JP12133387U patent/JPS6426857U/ja active Pending