JPS6425985A - Reduced-pressure vapor growing device - Google Patents
Reduced-pressure vapor growing deviceInfo
- Publication number
- JPS6425985A JPS6425985A JP18188687A JP18188687A JPS6425985A JP S6425985 A JPS6425985 A JP S6425985A JP 18188687 A JP18188687 A JP 18188687A JP 18188687 A JP18188687 A JP 18188687A JP S6425985 A JPS6425985 A JP S6425985A
- Authority
- JP
- Japan
- Prior art keywords
- supporting base
- light transmissive
- substrate
- transmissive supporting
- reduced
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Chemical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18188687A JPS6425985A (en) | 1987-07-20 | 1987-07-20 | Reduced-pressure vapor growing device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18188687A JPS6425985A (en) | 1987-07-20 | 1987-07-20 | Reduced-pressure vapor growing device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6425985A true JPS6425985A (en) | 1989-01-27 |
JPH0465148B2 JPH0465148B2 (enrdf_load_stackoverflow) | 1992-10-19 |
Family
ID=16108595
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP18188687A Granted JPS6425985A (en) | 1987-07-20 | 1987-07-20 | Reduced-pressure vapor growing device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6425985A (enrdf_load_stackoverflow) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1995028002A1 (en) * | 1994-04-08 | 1995-10-19 | Hitachi, Ltd. | Method and device for processing semiconductor wafer |
WO1999043022A1 (en) * | 1998-02-23 | 1999-08-26 | Applied Materials, Inc. | Thermal cycling module and process using radiant heat |
US5951774A (en) * | 1995-01-27 | 1999-09-14 | Nec Corporation | Cold-wall operated vapor-phase growth system |
US7740703B2 (en) * | 2003-03-18 | 2010-06-22 | Hitachi Cable, Ltd. | Semiconductor film formation device |
-
1987
- 1987-07-20 JP JP18188687A patent/JPS6425985A/ja active Granted
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1995028002A1 (en) * | 1994-04-08 | 1995-10-19 | Hitachi, Ltd. | Method and device for processing semiconductor wafer |
US5951774A (en) * | 1995-01-27 | 1999-09-14 | Nec Corporation | Cold-wall operated vapor-phase growth system |
WO1999043022A1 (en) * | 1998-02-23 | 1999-08-26 | Applied Materials, Inc. | Thermal cycling module and process using radiant heat |
US7740703B2 (en) * | 2003-03-18 | 2010-06-22 | Hitachi Cable, Ltd. | Semiconductor film formation device |
Also Published As
Publication number | Publication date |
---|---|
JPH0465148B2 (enrdf_load_stackoverflow) | 1992-10-19 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP0255454A3 (en) | Apparatus for chemical vapor deposition | |
EP0383491A3 (en) | A low pressure vapour phase growth apparatus | |
GB2163000B (en) | Apparatus for forming crystal of semiconductor | |
ES465054A1 (es) | Un dispositivo mejorado para el fotocurado de un revesti- miento sobre un sustrato en movimiento. | |
AU5924886A (en) | Heat activation process and apparatus for heat shrinkable material | |
FR2815395B1 (fr) | Dispositif de chauffage rapide et uniforme d'un substrat par rayonnement infrarouge | |
CA2001009A1 (en) | Infrared window | |
DE69909046D1 (de) | Ofen zum Erwärmen von Gegenständen | |
JPS6425985A (en) | Reduced-pressure vapor growing device | |
EP0605725A4 (en) | Apparatus for introducing gas, and apparatus and method for epitaxial growth. | |
CA2051214A1 (en) | Vacuum Film Forming Apparatus | |
JPS6474717A (en) | Formation of thin film | |
JPS56155786A (en) | Developing device for sheet for forming solid image | |
HK19490A (en) | Ultraviolet irradiation bonding apparatus | |
EP0095384A3 (en) | Vacuum deposition apparatus | |
JPS6481318A (en) | Ashing of organic polymer film and device therefor | |
JPS5745923A (en) | Light diffusing method | |
TW350981B (en) | Method and system for plasma-processing | |
JPS6453421A (en) | Resist coating device | |
JPS57178316A (en) | Manufacture of semiconductor element and device therefor | |
WO1994024840A3 (en) | Thin film heat treatment apparatus | |
JPS5275177A (en) | Vapor growth device | |
JPS534419A (en) | Pick up unit | |
JPS648631A (en) | Cleaning of semiconductor surface | |
RU1515719C (ru) | Протяжная электропечь для светлого отжига ленты |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
EXPY | Cancellation because of completion of term | ||
FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20071019 Year of fee payment: 15 |