JPH0465148B2 - - Google Patents

Info

Publication number
JPH0465148B2
JPH0465148B2 JP18188687A JP18188687A JPH0465148B2 JP H0465148 B2 JPH0465148 B2 JP H0465148B2 JP 18188687 A JP18188687 A JP 18188687A JP 18188687 A JP18188687 A JP 18188687A JP H0465148 B2 JPH0465148 B2 JP H0465148B2
Authority
JP
Japan
Prior art keywords
light
substrate
support base
reduced pressure
vapor phase
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP18188687A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6425985A (en
Inventor
Isamu Morisako
Kenji Numajiri
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Anelva Corp
Original Assignee
Anelva Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Anelva Corp filed Critical Anelva Corp
Priority to JP18188687A priority Critical patent/JPS6425985A/ja
Publication of JPS6425985A publication Critical patent/JPS6425985A/ja
Publication of JPH0465148B2 publication Critical patent/JPH0465148B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP18188687A 1987-07-20 1987-07-20 Reduced-pressure vapor growing device Granted JPS6425985A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18188687A JPS6425985A (en) 1987-07-20 1987-07-20 Reduced-pressure vapor growing device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18188687A JPS6425985A (en) 1987-07-20 1987-07-20 Reduced-pressure vapor growing device

Publications (2)

Publication Number Publication Date
JPS6425985A JPS6425985A (en) 1989-01-27
JPH0465148B2 true JPH0465148B2 (enrdf_load_stackoverflow) 1992-10-19

Family

ID=16108595

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18188687A Granted JPS6425985A (en) 1987-07-20 1987-07-20 Reduced-pressure vapor growing device

Country Status (1)

Country Link
JP (1) JPS6425985A (enrdf_load_stackoverflow)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1995028002A1 (en) * 1994-04-08 1995-10-19 Hitachi, Ltd. Method and device for processing semiconductor wafer
JP2701767B2 (ja) * 1995-01-27 1998-01-21 日本電気株式会社 気相成長装置
US6018616A (en) * 1998-02-23 2000-01-25 Applied Materials, Inc. Thermal cycling module and process using radiant heat
JP4058364B2 (ja) * 2003-03-18 2008-03-05 株式会社日立製作所 半導体製造装置

Also Published As

Publication number Publication date
JPS6425985A (en) 1989-01-27

Similar Documents

Publication Publication Date Title
KR100919331B1 (ko) 샤워 헤드 구조체 및 가스 처리 장치
US20080210273A1 (en) Batch photoresist dry strip and ash system and process
JP2001023966A (ja) 半導体装置の製造方法及び処理装置
US5916370A (en) Semiconductor processing chamber having diamond coated components
US4058638A (en) Method of optical thin film coating
JP2002155364A (ja) シャワーヘッド構造、成膜装置、成膜方法及びクリーニング方法
KR100274754B1 (ko) 성막장치 및 성막방법
JPH0465148B2 (enrdf_load_stackoverflow)
KR100375396B1 (ko) 준고온벽을갖춘반응챔버
JP2701767B2 (ja) 気相成長装置
US6106628A (en) Heater unit for chemical vapor deposition systems
JP3131860B2 (ja) 成膜処理装置
JPH0544825B2 (enrdf_load_stackoverflow)
JP2001267255A (ja) 気相成長装置及び気相成長方法
JPH06120146A (ja) 成膜処理方法及びその装置
JPH0560256B2 (enrdf_load_stackoverflow)
JPH06302519A (ja) 半導体製造装置
JP3258121B2 (ja) Ｃｖｄ装置
JPS622525A (ja) 気相反応装置
JP3231914B2 (ja) 成膜方法及び成膜装置
JPH04191375A (ja) 基板加熱装置
JPH05160071A (ja) 半導体製造装置
JPH0598447A (ja) 光ｃｖｄ装置
JPH06216045A (ja) 気相成長装置
JPH07108836B2 (ja) 減圧ｃｖｄ装置

Legal Events

Date Code Title Description
R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

EXPY Cancellation because of completion of term
FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20071019

Year of fee payment: 15