JPS6425464A - Semiconductor memory cell - Google Patents

Semiconductor memory cell

Info

Publication number
JPS6425464A
JPS6425464A JP62181474A JP18147487A JPS6425464A JP S6425464 A JPS6425464 A JP S6425464A JP 62181474 A JP62181474 A JP 62181474A JP 18147487 A JP18147487 A JP 18147487A JP S6425464 A JPS6425464 A JP S6425464A
Authority
JP
Japan
Prior art keywords
layer
type
substrate
polysilicon
plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62181474A
Other languages
English (en)
Inventor
Yoshiyuki Iwata
Takashi Osone
Masanori Fukumoto
Mitsuo Yasuhira
Toshiki Yabu
Yohei Ichikawa
Kazuhiro Matsuyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP62181474A priority Critical patent/JPS6425464A/ja
Publication of JPS6425464A publication Critical patent/JPS6425464A/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B12/00Dynamic random access memory [DRAM] devices
    • H10B12/30DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/39DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor and the transistor being in a same trench
    • H10B12/395DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor and the transistor being in a same trench the transistor being vertical

Landscapes

  • Semiconductor Memories (AREA)
JP62181474A 1987-07-21 1987-07-21 Semiconductor memory cell Pending JPS6425464A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62181474A JPS6425464A (en) 1987-07-21 1987-07-21 Semiconductor memory cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62181474A JPS6425464A (en) 1987-07-21 1987-07-21 Semiconductor memory cell

Publications (1)

Publication Number Publication Date
JPS6425464A true JPS6425464A (en) 1989-01-27

Family

ID=16101387

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62181474A Pending JPS6425464A (en) 1987-07-21 1987-07-21 Semiconductor memory cell

Country Status (1)

Country Link
JP (1) JPS6425464A (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01260854A (ja) * 1988-04-12 1989-10-18 Fujitsu Ltd 半導体記憶装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01260854A (ja) * 1988-04-12 1989-10-18 Fujitsu Ltd 半導体記憶装置

Similar Documents

Publication Publication Date Title
EP0154871A3 (en) One-transistor dynamic random-access memory
JPS6441262A (en) Memory cell
JPS5718356A (en) Semiconductor memory storage
US4158238A (en) Stratified charge ram having an opposite dopant polarity MOSFET switching circuit
JPS6425464A (en) Semiconductor memory cell
HK125595A (en) Memory cell design for dynamic semiconductor memories
JPS6422057A (en) Manufacture of multi-layer planar type capacitor
JPS6486561A (en) Vertical mos transistor
KR890003031A (ko) 반도체장치
JPS57118664A (en) Semiconductor device
JPS6474737A (en) Master slice type semiconductor device
JPS6425465A (en) Semiconductor storage device
JPS5536928A (en) Semiconductor dynamic memory element
JPS6414953A (en) Mis type semiconductor memory device
JPS6425463A (en) Semiconductor memory cell
JPS6425459A (en) Semiconductor memory cell
JPS57103349A (en) Semiconductor memory device
JPS6425461A (en) Semiconductor memory cell and manufacture thereof
JPS56126978A (en) Manufacture of junction type field effect transistor
JPS57121271A (en) Field effect transistor
JPS6489370A (en) Semiconductor storage device
JPS6481359A (en) Mos type semiconductor integrated circuit device
JPS6425460A (en) Semiconductor memory
JPS5797668A (en) Semiconductor device
JPS57206068A (en) Semiconductor memory device