JPS6425463A - Semiconductor memory cell - Google Patents

Semiconductor memory cell

Info

Publication number
JPS6425463A
JPS6425463A JP62181473A JP18147387A JPS6425463A JP S6425463 A JPS6425463 A JP S6425463A JP 62181473 A JP62181473 A JP 62181473A JP 18147387 A JP18147387 A JP 18147387A JP S6425463 A JPS6425463 A JP S6425463A
Authority
JP
Japan
Prior art keywords
numeral
trench
memory cell
denotes
diffused layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62181473A
Other languages
Japanese (ja)
Inventor
Yoshiyuki Iwata
Masanori Fukumoto
Mitsuo Yasuhira
Toshiki Yabu
Yohei Ichikawa
Kazuhiro Matsuyama
Takashi Osone
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP62181473A priority Critical patent/JPS6425463A/en
Publication of JPS6425463A publication Critical patent/JPS6425463A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/39—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor and the transistor being in a same trench
    • H10B12/395—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor and the transistor being in a same trench the transistor being vertical

Landscapes

  • Semiconductor Memories (AREA)

Abstract

PURPOSE:To perform a semiconductor memory cell which can cope with a large capacity and high density DRAM by forming all charge storage capacitor, a field effect transistor and an element isolating region in a trench. CONSTITUTION:A trench is so formed on a P-type Si substrate 1 that a memory cell remains insularly, a P<+> type diffused layer region 5 is formed in the bottom of the trench to isolate elements between adjacent memory cells. A charge storage capacitor is composed of a storage electrode 2 of an N<+> type diffused layer region, a capacitor oxide film 3, and a polysilicon plate electrode 4. Numeral 7 denotes an N<+> type diffused layer region, numeral 8 denotes a polysilicon film, numeral 9 denotes an SiO2 film, numeral 2 is a source, numeral 7 is a drain, numeral 8 is a gate, and numeral 9 is a gate oxide film. Thus, a vertical MOS transistor is formed on the top of the sidewall of the trench, and two MOS transistors are provided in one memory cell. A bit line 12 is connected through a contact region 13 to the drain 7.
JP62181473A 1987-07-21 1987-07-21 Semiconductor memory cell Pending JPS6425463A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62181473A JPS6425463A (en) 1987-07-21 1987-07-21 Semiconductor memory cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62181473A JPS6425463A (en) 1987-07-21 1987-07-21 Semiconductor memory cell

Publications (1)

Publication Number Publication Date
JPS6425463A true JPS6425463A (en) 1989-01-27

Family

ID=16101370

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62181473A Pending JPS6425463A (en) 1987-07-21 1987-07-21 Semiconductor memory cell

Country Status (1)

Country Link
JP (1) JPS6425463A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1180730A2 (en) * 2000-08-11 2002-02-20 Canon Kabushiki Kaisha Image heating apparatus of induction heating type

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61280653A (en) * 1985-02-28 1986-12-11 テキサス　インスツルメンツ　インコ−ポレイテツド Dram cell and memory cell array thereof and making thereof

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61280653A (en) * 1985-02-28 1986-12-11 テキサス　インスツルメンツ　インコ−ポレイテツド Dram cell and memory cell array thereof and making thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1180730A2 (en) * 2000-08-11 2002-02-20 Canon Kabushiki Kaisha Image heating apparatus of induction heating type

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