JPS6425462A - Semiconductor memory cell and manufacture thereof - Google Patents

Semiconductor memory cell and manufacture thereof

Info

Publication number
JPS6425462A
JPS6425462A JP62181472A JP18147287A JPS6425462A JP S6425462 A JPS6425462 A JP S6425462A JP 62181472 A JP62181472 A JP 62181472A JP 18147287 A JP18147287 A JP 18147287A JP S6425462 A JPS6425462 A JP S6425462A
Authority
JP
Japan
Prior art keywords
layer
film
capacity
semiconductor memory
trench
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62181472A
Other languages
Japanese (ja)
Inventor
Kazuhiro Matsuyama
Takashi Osone
Masanori Fukumoto
Mitsuo Yasuhira
Toshiki Yabu
Yoshiyuki Iwata
Yohei Ichikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP62181472A priority Critical patent/JPS6425462A/en
Publication of JPS6425462A publication Critical patent/JPS6425462A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/39—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor and the transistor being in a same trench
    • H10B12/395—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor and the transistor being in a same trench the transistor being vertical

Landscapes

  • Semiconductor Memories (AREA)

Abstract

PURPOSE:To highly integrate and to increase the capacity of a semiconductor memory by providing a semiconductor layer having the same area as the opening area of a trench above a word line to allow the interval of the trenches to be shorter. CONSTITUTION:A trench 9 is formed on a P<+> type substrate 1, an SiO2 film 4 for a capacity and a polysilicon charge storage layer 5 are formed therein, thereby constructing a storage capacity. An N<+> type semiconductor layer 11, a P-type substrate 2, a gate oxide film 6, and a polysilicon film 7 are formed on the upper face of the capacity, and a MOS transistor is formed of the layer 5. The film 7 is the gate of the transistor and a word line. An aluminum bit line 12 is formed in contact with the layer 11. The layer 11 is formed in the same shape as the trench 9 on the upper face of the film 7, and the interval of trenches 9 between adjacent semiconductor memory cells can be made shorter to realize a high degree of integration.
JP62181472A 1987-07-21 1987-07-21 Semiconductor memory cell and manufacture thereof Pending JPS6425462A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62181472A JPS6425462A (en) 1987-07-21 1987-07-21 Semiconductor memory cell and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62181472A JPS6425462A (en) 1987-07-21 1987-07-21 Semiconductor memory cell and manufacture thereof

Publications (1)

Publication Number Publication Date
JPS6425462A true JPS6425462A (en) 1989-01-27

Family

ID=16101354

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62181472A Pending JPS6425462A (en) 1987-07-21 1987-07-21 Semiconductor memory cell and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS6425462A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5281837A (en) * 1990-05-28 1994-01-25 Kabushiki Kaisha Toshiba Semiconductor memory device having cross-point DRAM cell structure

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5281837A (en) * 1990-05-28 1994-01-25 Kabushiki Kaisha Toshiba Semiconductor memory device having cross-point DRAM cell structure

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