JPS6418763U - - Google Patents

Info

Publication number
JPS6418763U
JPS6418763U JP11279887U JP11279887U JPS6418763U JP S6418763 U JPS6418763 U JP S6418763U JP 11279887 U JP11279887 U JP 11279887U JP 11279887 U JP11279887 U JP 11279887U JP S6418763 U JPS6418763 U JP S6418763U
Authority
JP
Japan
Prior art keywords
semiconductor substrate
conductivity type
solar cell
cell element
junction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11279887U
Other languages
English (en)
Other versions
JPH0539640Y2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1987112798U priority Critical patent/JPH0539640Y2/ja
Publication of JPS6418763U publication Critical patent/JPS6418763U/ja
Application granted granted Critical
Publication of JPH0539640Y2 publication Critical patent/JPH0539640Y2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy

Description

【図面の簡単な説明】
第1図は本考案に係る太陽電池素子の一実施例
の断面図、第2図は同実施例における入射光の反
射・屈折の様子を示す図、第3図は従来例の太陽
電池素子の断面図、第4図は従来例における入射
光の反射・屈折の様子を示す図である。 1……シリコン基板、2……基板表面、3……
基板裏面、4……PN接合面、5……表電極、6
……裏電極、7……反射防止膜、8……接着剤、
9……カバーグラス。

Claims (1)

    【実用新案登録請求の範囲】
  1. 一導電型の半導体基板の一方の主面にこの基板
    とは反対導電型の不純物を拡散して形成されたP
    N接合を有する太陽電池素子において、前記半導
    体基板の表面及び裏面に異方性エツチングによる
    無数の微小五面体よりなる凹凸を形成してなるこ
    とを特徴とする太陽電池素子。
JP1987112798U 1987-07-22 1987-07-22 Expired - Lifetime JPH0539640Y2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1987112798U JPH0539640Y2 (ja) 1987-07-22 1987-07-22

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1987112798U JPH0539640Y2 (ja) 1987-07-22 1987-07-22

Publications (2)

Publication Number Publication Date
JPS6418763U true JPS6418763U (ja) 1989-01-30
JPH0539640Y2 JPH0539640Y2 (ja) 1993-10-07

Family

ID=31352066

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1987112798U Expired - Lifetime JPH0539640Y2 (ja) 1987-07-22 1987-07-22

Country Status (1)

Country Link
JP (1) JPH0539640Y2 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04139769A (ja) * 1990-10-01 1992-05-13 Hitachi Ltd コルゲート型太陽電池の製造方法
KR101528398B1 (ko) * 2012-04-04 2015-06-11 인피니언 테크놀로지스 아게 Mems 디바이스 및 mems 디바이스를 제조하는 방법

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4832946A (ja) * 1971-08-31 1973-05-04
JPS49119591A (ja) * 1973-02-21 1974-11-15
JPS53121494A (en) * 1978-03-10 1978-10-23 Agency Of Ind Science & Technol Photo electric converter having sensitivity to light of long wave lenght
JPS5473587A (en) * 1977-11-24 1979-06-12 Sharp Corp Thin film solar battery device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4832946A (ja) * 1971-08-31 1973-05-04
JPS49119591A (ja) * 1973-02-21 1974-11-15
JPS5473587A (en) * 1977-11-24 1979-06-12 Sharp Corp Thin film solar battery device
JPS53121494A (en) * 1978-03-10 1978-10-23 Agency Of Ind Science & Technol Photo electric converter having sensitivity to light of long wave lenght

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04139769A (ja) * 1990-10-01 1992-05-13 Hitachi Ltd コルゲート型太陽電池の製造方法
KR101528398B1 (ko) * 2012-04-04 2015-06-11 인피니언 테크놀로지스 아게 Mems 디바이스 및 mems 디바이스를 제조하는 방법

Also Published As

Publication number Publication date
JPH0539640Y2 (ja) 1993-10-07

Similar Documents

Publication Publication Date Title
JPH03102749U (ja)
JPS6418763U (ja)
JPS63134557U (ja)
JPH01146562U (ja)
JPS6454345U (ja)
JPS6161849U (ja)
JPH042055U (ja)
JPH01137554U (ja)
JPS6349257U (ja)
JPH048451U (ja)
JPS62188092U (ja)
JPS5948062U (ja) 非晶質太陽電池
JPH0479449U (ja)
JPH01117682U (ja)
JPH03128953U (ja)
JPH031452U (ja)
JPH0189759U (ja)
JPS59127250U (ja) 光センサ
JPS63142862U (ja)
JPS6389265U (ja)
JPS63114058U (ja)
TETSUO et al. Semiconductor device and manufacture thereof
JPS63197359U (ja)
JPH01171050U (ja)
JPS6333647U (ja)