JPS6418252A - Complementary semiconductor device - Google Patents
Complementary semiconductor deviceInfo
- Publication number
- JPS6418252A JPS6418252A JP62175573A JP17557387A JPS6418252A JP S6418252 A JPS6418252 A JP S6418252A JP 62175573 A JP62175573 A JP 62175573A JP 17557387 A JP17557387 A JP 17557387A JP S6418252 A JPS6418252 A JP S6418252A
- Authority
- JP
- Japan
- Prior art keywords
- low
- resistance
- regions
- fet
- well
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE:To enhance the tolerance in a latch-up by a method wherein a low- resistance layer situated under one FET, a low-resistance region piercing from the low-resistance layer to the surface of a substrate by partitioning both FET's and an insulating region running along side faces of the other FET in the low- resistance region are provided so that the integration density can be enhanced. CONSTITUTION:The following are provided: low-resistance regions 6 piercing from a low-resistance layer 5 to the surface of a substrate 1 by partitioning an n-channel FET(field-effect transistor) 3 and a p-channel FET 4; insulating regions 7 running along side faces of the regions. Contact regions of a well 2 are removed and a region of the well 2 is reduced by that much. Because the well 2 is of a p-type, the low-resistance regions 6 are extracted to a ground potential similar to the contact regions, the low-resistance layer 5 is extracted to the ground potential in a low-resistance state and function in combination also as contacts of the well 2. By this setup, an electric charge of a noise does not remain in the low-resistance layer 5; the tolerance in a latch-up can be enhanced; the integration density of a semiconductor device can be enhanced.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62175573A JPS6418252A (en) | 1987-07-14 | 1987-07-14 | Complementary semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62175573A JPS6418252A (en) | 1987-07-14 | 1987-07-14 | Complementary semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6418252A true JPS6418252A (en) | 1989-01-23 |
Family
ID=15998442
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62175573A Pending JPS6418252A (en) | 1987-07-14 | 1987-07-14 | Complementary semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6418252A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7331739B2 (en) | 2004-08-12 | 2008-02-19 | Makino Milling Machine Co., Ltd. | Method for machining workpiece |
-
1987
- 1987-07-14 JP JP62175573A patent/JPS6418252A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7331739B2 (en) | 2004-08-12 | 2008-02-19 | Makino Milling Machine Co., Ltd. | Method for machining workpiece |
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