JPS6415930A - Plasma processing device - Google Patents
Plasma processing deviceInfo
- Publication number
- JPS6415930A JPS6415930A JP62170966A JP17096687A JPS6415930A JP S6415930 A JPS6415930 A JP S6415930A JP 62170966 A JP62170966 A JP 62170966A JP 17096687 A JP17096687 A JP 17096687A JP S6415930 A JPS6415930 A JP S6415930A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- sample
- heating plate
- treating
- chf3
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Drying Of Semiconductors (AREA)
Abstract
PURPOSE:To lengthen a cleaning period by installing a treating chamber supplied with a treating gas containing a depositing gas and a plasma means utilizing an electromagnetic field and mounting a specific non-magnetic heating plate while being approximately opposed to a sample arranged into the treating chamber. CONSTITUTION:A heating plate 12 is formed in a corrugaed irregular surface, Si is used as a foundation material and SiO2 as an etching material as samples, a gas in which depositing CHF3 is mixed with C2F6 is employed as a treating gas, the treating gas is changed into plasma at low pressure by utilizing an electromagnetic field, and plasma is heated on the surface oppositely faced to the sample 11. The heat of the heating plate 12 at low pressure is difficult to be transmitted to the sample 11 and has no adverse effect on the sample 11, and the evaporation of a product efficiently reaches the surface of the sample. That is, when a selection ratio is kept constant, the composition ratio of CHF3 as a depositing gas can be diminished, thus reducing the quantity of the product, then lengthening a cleaning period. When the material of the heating plate 12 is composed of SiC having reactivity with the treating gas, the composition ratio of CHF3 is further lowered.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62170966A JP2619395B2 (en) | 1987-07-10 | 1987-07-10 | Plasma processing method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62170966A JP2619395B2 (en) | 1987-07-10 | 1987-07-10 | Plasma processing method |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6415930A true JPS6415930A (en) | 1989-01-19 |
JP2619395B2 JP2619395B2 (en) | 1997-06-11 |
Family
ID=15914667
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62170966A Expired - Lifetime JP2619395B2 (en) | 1987-07-10 | 1987-07-10 | Plasma processing method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2619395B2 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5880036A (en) * | 1992-06-15 | 1999-03-09 | Micron Technology, Inc. | Method for enhancing oxide to nitride selectivity through the use of independent heat control |
US6217785B1 (en) | 1992-12-01 | 2001-04-17 | Applied Materials, Inc. | Scavenging fluorine in a planar inductively coupled plasma reactor |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52114444A (en) * | 1976-03-22 | 1977-09-26 | Nippon Telegraph & Telephone | Plasma etching method |
JPS5853833A (en) * | 1981-09-26 | 1983-03-30 | Toshiba Corp | Plasma etching device |
JPS6066823A (en) * | 1983-09-22 | 1985-04-17 | Semiconductor Energy Lab Co Ltd | Etching method of semiconductor |
JPS60103620A (en) * | 1983-11-11 | 1985-06-07 | Hitachi Ltd | Plasma treatment device |
JPS62109317A (en) * | 1985-11-08 | 1987-05-20 | Anelva Corp | Plasma etching apparatus |
-
1987
- 1987-07-10 JP JP62170966A patent/JP2619395B2/en not_active Expired - Lifetime
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52114444A (en) * | 1976-03-22 | 1977-09-26 | Nippon Telegraph & Telephone | Plasma etching method |
JPS5853833A (en) * | 1981-09-26 | 1983-03-30 | Toshiba Corp | Plasma etching device |
JPS6066823A (en) * | 1983-09-22 | 1985-04-17 | Semiconductor Energy Lab Co Ltd | Etching method of semiconductor |
JPS60103620A (en) * | 1983-11-11 | 1985-06-07 | Hitachi Ltd | Plasma treatment device |
JPS62109317A (en) * | 1985-11-08 | 1987-05-20 | Anelva Corp | Plasma etching apparatus |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5880036A (en) * | 1992-06-15 | 1999-03-09 | Micron Technology, Inc. | Method for enhancing oxide to nitride selectivity through the use of independent heat control |
US6287978B1 (en) | 1992-06-15 | 2001-09-11 | Micron Technology, Inc. | Method of etching a substrate |
US6217785B1 (en) | 1992-12-01 | 2001-04-17 | Applied Materials, Inc. | Scavenging fluorine in a planar inductively coupled plasma reactor |
EP0802560B1 (en) * | 1992-12-01 | 2002-07-31 | Applied Materials, Inc. | Process and electromagnetically coupled plasma apparatus for etching oxides |
Also Published As
Publication number | Publication date |
---|---|
JP2619395B2 (en) | 1997-06-11 |
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