JPS6415930A - Plasma processing device - Google Patents

Plasma processing device

Info

Publication number
JPS6415930A
JPS6415930A JP62170966A JP17096687A JPS6415930A JP S6415930 A JPS6415930 A JP S6415930A JP 62170966 A JP62170966 A JP 62170966A JP 17096687 A JP17096687 A JP 17096687A JP S6415930 A JPS6415930 A JP S6415930A
Authority
JP
Japan
Prior art keywords
gas
sample
heating plate
treating
chf3
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62170966A
Other languages
Japanese (ja)
Other versions
JP2619395B2 (en
Inventor
Yutaka Omoto
Makoto Nawata
Yutaka Kakehi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP62170966A priority Critical patent/JP2619395B2/en
Publication of JPS6415930A publication Critical patent/JPS6415930A/en
Application granted granted Critical
Publication of JP2619395B2 publication Critical patent/JP2619395B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Abstract

PURPOSE:To lengthen a cleaning period by installing a treating chamber supplied with a treating gas containing a depositing gas and a plasma means utilizing an electromagnetic field and mounting a specific non-magnetic heating plate while being approximately opposed to a sample arranged into the treating chamber. CONSTITUTION:A heating plate 12 is formed in a corrugaed irregular surface, Si is used as a foundation material and SiO2 as an etching material as samples, a gas in which depositing CHF3 is mixed with C2F6 is employed as a treating gas, the treating gas is changed into plasma at low pressure by utilizing an electromagnetic field, and plasma is heated on the surface oppositely faced to the sample 11. The heat of the heating plate 12 at low pressure is difficult to be transmitted to the sample 11 and has no adverse effect on the sample 11, and the evaporation of a product efficiently reaches the surface of the sample. That is, when a selection ratio is kept constant, the composition ratio of CHF3 as a depositing gas can be diminished, thus reducing the quantity of the product, then lengthening a cleaning period. When the material of the heating plate 12 is composed of SiC having reactivity with the treating gas, the composition ratio of CHF3 is further lowered.
JP62170966A 1987-07-10 1987-07-10 Plasma processing method Expired - Lifetime JP2619395B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62170966A JP2619395B2 (en) 1987-07-10 1987-07-10 Plasma processing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62170966A JP2619395B2 (en) 1987-07-10 1987-07-10 Plasma processing method

Publications (2)

Publication Number Publication Date
JPS6415930A true JPS6415930A (en) 1989-01-19
JP2619395B2 JP2619395B2 (en) 1997-06-11

Family

ID=15914667

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62170966A Expired - Lifetime JP2619395B2 (en) 1987-07-10 1987-07-10 Plasma processing method

Country Status (1)

Country Link
JP (1) JP2619395B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5880036A (en) * 1992-06-15 1999-03-09 Micron Technology, Inc. Method for enhancing oxide to nitride selectivity through the use of independent heat control
US6217785B1 (en) 1992-12-01 2001-04-17 Applied Materials, Inc. Scavenging fluorine in a planar inductively coupled plasma reactor

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52114444A (en) * 1976-03-22 1977-09-26 Nippon Telegraph & Telephone Plasma etching method
JPS5853833A (en) * 1981-09-26 1983-03-30 Toshiba Corp Plasma etching device
JPS6066823A (en) * 1983-09-22 1985-04-17 Semiconductor Energy Lab Co Ltd Etching method of semiconductor
JPS60103620A (en) * 1983-11-11 1985-06-07 Hitachi Ltd Plasma treatment device
JPS62109317A (en) * 1985-11-08 1987-05-20 Anelva Corp Plasma etching apparatus

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52114444A (en) * 1976-03-22 1977-09-26 Nippon Telegraph & Telephone Plasma etching method
JPS5853833A (en) * 1981-09-26 1983-03-30 Toshiba Corp Plasma etching device
JPS6066823A (en) * 1983-09-22 1985-04-17 Semiconductor Energy Lab Co Ltd Etching method of semiconductor
JPS60103620A (en) * 1983-11-11 1985-06-07 Hitachi Ltd Plasma treatment device
JPS62109317A (en) * 1985-11-08 1987-05-20 Anelva Corp Plasma etching apparatus

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5880036A (en) * 1992-06-15 1999-03-09 Micron Technology, Inc. Method for enhancing oxide to nitride selectivity through the use of independent heat control
US6287978B1 (en) 1992-06-15 2001-09-11 Micron Technology, Inc. Method of etching a substrate
US6217785B1 (en) 1992-12-01 2001-04-17 Applied Materials, Inc. Scavenging fluorine in a planar inductively coupled plasma reactor
EP0802560B1 (en) * 1992-12-01 2002-07-31 Applied Materials, Inc. Process and electromagnetically coupled plasma apparatus for etching oxides

Also Published As

Publication number Publication date
JP2619395B2 (en) 1997-06-11

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