JPS6415916A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS6415916A JPS6415916A JP62170933A JP17093387A JPS6415916A JP S6415916 A JPS6415916 A JP S6415916A JP 62170933 A JP62170933 A JP 62170933A JP 17093387 A JP17093387 A JP 17093387A JP S6415916 A JPS6415916 A JP S6415916A
- Authority
- JP
- Japan
- Prior art keywords
- trench
- oxide film
- substrate
- silicon oxide
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 3
- 238000009792 diffusion process Methods 0.000 abstract 3
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 3
- 239000013078 crystal Substances 0.000 abstract 2
- 230000007547 defect Effects 0.000 abstract 2
- 238000005530 etching Methods 0.000 abstract 2
- 239000012535 impurity Substances 0.000 abstract 2
- 238000007493 shaping process Methods 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 238000010884 ion-beam technique Methods 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 abstract 1
- 230000001678 irradiating effect Effects 0.000 abstract 1
- 239000002245 particle Substances 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62170933A JPS6415916A (en) | 1987-07-10 | 1987-07-10 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62170933A JPS6415916A (en) | 1987-07-10 | 1987-07-10 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6415916A true JPS6415916A (en) | 1989-01-19 |
Family
ID=15914057
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62170933A Pending JPS6415916A (en) | 1987-07-10 | 1987-07-10 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6415916A (ja) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100402938B1 (ko) * | 1996-05-23 | 2004-01-13 | 주식회사 하이닉스반도체 | 반도체소자의트렌치형성방법 |
-
1987
- 1987-07-10 JP JP62170933A patent/JPS6415916A/ja active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100402938B1 (ko) * | 1996-05-23 | 2004-01-13 | 주식회사 하이닉스반도체 | 반도체소자의트렌치형성방법 |
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