JPS6410109B2 - - Google Patents
Info
- Publication number
- JPS6410109B2 JPS6410109B2 JP2227282A JP2227282A JPS6410109B2 JP S6410109 B2 JPS6410109 B2 JP S6410109B2 JP 2227282 A JP2227282 A JP 2227282A JP 2227282 A JP2227282 A JP 2227282A JP S6410109 B2 JPS6410109 B2 JP S6410109B2
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- strain
- amorphous silicon
- semiconductor thin
- silicon semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 60
- 239000010409 thin film Substances 0.000 claims description 58
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 41
- 238000000034 method Methods 0.000 claims description 40
- 239000000758 substrate Substances 0.000 claims description 28
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 6
- 230000000694 effects Effects 0.000 description 38
- 239000010408 film Substances 0.000 description 14
- 238000010586 diagram Methods 0.000 description 12
- 239000007789 gas Substances 0.000 description 11
- 238000001514 detection method Methods 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 8
- 230000001681 protective effect Effects 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 7
- 238000005259 measurement Methods 0.000 description 7
- 239000011521 glass Substances 0.000 description 6
- 238000000151 deposition Methods 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 239000011888 foil Substances 0.000 description 4
- 238000001259 photo etching Methods 0.000 description 4
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 4
- 238000001771 vacuum deposition Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- 229910002482 Cu–Ni Inorganic materials 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 229910018487 Ni—Cr Inorganic materials 0.000 description 1
- 229910004014 SiF4 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910008310 Si—Ge Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- QUZPNFFHZPRKJD-UHFFFAOYSA-N germane Chemical compound [GeH4] QUZPNFFHZPRKJD-UHFFFAOYSA-N 0.000 description 1
- 229910052986 germanium hydride Inorganic materials 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000010445 mica Substances 0.000 description 1
- 229910052618 mica group Inorganic materials 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/18—Measuring force or stress, in general using properties of piezo-resistive materials, i.e. materials of which the ohmic resistance varies according to changes in magnitude or direction of force applied to the material
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
- Pressure Sensors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2227282A JPS58139475A (ja) | 1982-02-15 | 1982-02-15 | ひずみゲ−ジ |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2227282A JPS58139475A (ja) | 1982-02-15 | 1982-02-15 | ひずみゲ−ジ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58139475A JPS58139475A (ja) | 1983-08-18 |
| JPS6410109B2 true JPS6410109B2 (ru) | 1989-02-21 |
Family
ID=12078122
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2227282A Granted JPS58139475A (ja) | 1982-02-15 | 1982-02-15 | ひずみゲ−ジ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58139475A (ru) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60195403A (ja) * | 1984-03-16 | 1985-10-03 | Fuji Electric Corp Res & Dev Ltd | ひずみ分布センサ |
| JPS60195402A (ja) * | 1984-03-16 | 1985-10-03 | Fuji Electric Corp Res & Dev Ltd | ひずみゲ−ジ |
| JPS6136978A (ja) * | 1984-07-28 | 1986-02-21 | Sumitomo Electric Ind Ltd | 触視覚センサ |
| JP2516964B2 (ja) * | 1987-03-31 | 1996-07-24 | 鐘淵化学工業株式会社 | 歪センサ− |
| US4937550A (en) * | 1987-03-31 | 1990-06-26 | Kanegafuchi Kagaku Kogyo Kabushiki Kaisha | Strain sensor |
| EP0380661A4 (en) * | 1987-10-07 | 1991-08-14 | Kabushiki Kaisha Komatsu Seisakusho | Semiconducteur thin-film pressure sensor and method of producing the same |
| JP2615738B2 (ja) * | 1988-01-19 | 1997-06-04 | 日本合成ゴム株式会社 | 角度センサ |
| JP2741385B2 (ja) * | 1988-09-27 | 1998-04-15 | 日立建機株式会社 | シリコン薄膜ピエゾ抵抗素子の製造法 |
| US5191798A (en) * | 1988-09-30 | 1993-03-09 | Kabushiki Kaisha Komatsu Seisakusho | Pressure sensor |
| KR0174872B1 (ko) * | 1995-12-08 | 1999-02-01 | 양승택 | 압 저항 소자 및 그의 제조방법 |
| RU2505782C1 (ru) * | 2012-08-21 | 2014-01-27 | Федеральное государственное унитарное предприятие "Научно-производственное объединение им. С.А. Лавочкина" | Наклеиваемый полупроводниковый тензорезистор (варианты) |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53142888A (en) * | 1977-05-18 | 1978-12-12 | Matsushita Electric Ind Co Ltd | Pressure converter of semiconductor |
-
1982
- 1982-02-15 JP JP2227282A patent/JPS58139475A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58139475A (ja) | 1983-08-18 |
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