JPS63918B2 - - Google Patents

Info

Publication number
JPS63918B2
JPS63918B2 JP58231792A JP23179283A JPS63918B2 JP S63918 B2 JPS63918 B2 JP S63918B2 JP 58231792 A JP58231792 A JP 58231792A JP 23179283 A JP23179283 A JP 23179283A JP S63918 B2 JPS63918 B2 JP S63918B2
Authority
JP
Japan
Prior art keywords
emitting layer
light
selenium
layer
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP58231792A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60124397A (ja
Inventor
Motoi Kitabayashi
Takuo Hayashi
Nobuhiko Ozawa
Yukihiro Hirasawa
Naotoshi Myazawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shingijutsu Kaihatsu Jigyodan
Original Assignee
Shingijutsu Kaihatsu Jigyodan
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shingijutsu Kaihatsu Jigyodan filed Critical Shingijutsu Kaihatsu Jigyodan
Priority to JP58231792A priority Critical patent/JPS60124397A/ja
Priority to GB08429925A priority patent/GB2152751B/en
Priority to US06/676,506 priority patent/US4647813A/en
Priority to DE19843444769 priority patent/DE3444769A1/de
Priority to FR8418707A priority patent/FR2556548A1/fr
Publication of JPS60124397A publication Critical patent/JPS60124397A/ja
Publication of JPS63918B2 publication Critical patent/JPS63918B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/823—Materials of the light-emitting regions comprising only Group II-VI materials, e.g. ZnO
    • H10H20/8232—Materials of the light-emitting regions comprising only Group II-VI materials, e.g. ZnO characterised by the dopants
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
    • H05B33/14—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
    • H05B33/145—Arrangements of the electroluminescent material
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
    • H05B33/22—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
    • H05B33/26—Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/012—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group II-IV materials
    • H10H20/0125—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group II-IV materials with a substrate not being Group II-VI materials
JP58231792A 1983-12-08 1983-12-08 エレクトロルミネツセンス素子 Granted JPS60124397A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP58231792A JPS60124397A (ja) 1983-12-08 1983-12-08 エレクトロルミネツセンス素子
GB08429925A GB2152751B (en) 1983-12-08 1984-11-27 Electroluminescent device
US06/676,506 US4647813A (en) 1983-12-08 1984-11-29 Electroluminescent device having an additional selenium layer
DE19843444769 DE3444769A1 (de) 1983-12-08 1984-12-07 Elektroluminiszierende vorrichtung
FR8418707A FR2556548A1 (fr) 1983-12-08 1984-12-07 Dispositif electroluminescent presentant une meilleure resistance en tension et en courant, notamment par l'utilisation d'une source de courant continu

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58231792A JPS60124397A (ja) 1983-12-08 1983-12-08 エレクトロルミネツセンス素子

Publications (2)

Publication Number Publication Date
JPS60124397A JPS60124397A (ja) 1985-07-03
JPS63918B2 true JPS63918B2 (en, 2012) 1988-01-09

Family

ID=16929087

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58231792A Granted JPS60124397A (ja) 1983-12-08 1983-12-08 エレクトロルミネツセンス素子

Country Status (5)

Country Link
US (1) US4647813A (en, 2012)
JP (1) JPS60124397A (en, 2012)
DE (1) DE3444769A1 (en, 2012)
FR (1) FR2556548A1 (en, 2012)
GB (1) GB2152751B (en, 2012)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4794302A (en) * 1986-01-08 1988-12-27 Kabushiki Kaisha Komatsu Seisakusho Thin film el device and method of manufacturing the same
IT1221924B (it) * 1987-07-01 1990-08-23 Eniricerche Spa Dispositivo elettroluminescente a film sottile e procedimento per la sua preparazione
JPH0268968A (ja) * 1988-09-02 1990-03-08 Sharp Corp 化合物半導体発光素子
JP2833282B2 (ja) * 1991-08-20 1998-12-09 富士電機株式会社 エレクトロルミネッセンス表示装置とその製造方法
WO1994015369A1 (en) * 1992-12-22 1994-07-07 Research Corporation Technologies, Inc. Group ii-vi compound semiconductor light emitting devices and an ohmic contact therefor
GB9506328D0 (en) * 1994-08-18 1995-05-17 Ultra Silicon Techn Uk Ltd Improvements in and relating to TFEL technology
GB2306251B (en) * 1994-08-18 1998-02-04 Ultra Silicon Techn Uk Ltd Improved luminous efficiency in a thin film EL device
US5910706A (en) * 1996-12-18 1999-06-08 Ultra Silicon Technology (Uk) Limited Laterally transmitting thin film electroluminescent device
US6713955B1 (en) 1998-11-20 2004-03-30 Agilent Technologies, Inc. Organic light emitting device having a current self-limiting structure
GB9907120D0 (en) * 1998-12-16 1999-05-19 Cambridge Display Tech Ltd Organic light-emissive devices

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3112404A (en) * 1953-06-17 1963-11-26 Rauland Corp Photosensitive radiant-energy transducers
US2818531A (en) * 1954-06-24 1957-12-31 Sylvania Electric Prod Electroluminescent image device
US3152222A (en) * 1955-03-24 1964-10-06 Sylvania Electric Prod Electroluminescent color image device
US3644741A (en) * 1969-05-16 1972-02-22 Energy Conversion Devices Inc Display screen using variable resistance memory semiconductor
US3708708A (en) * 1971-01-22 1973-01-02 Prudential Insurance Co Treatment of light emitting films to extend their useful life
DE2633038A1 (de) * 1975-07-22 1977-02-10 Phosphor Prod Co Ltd Elektrolumineszierende vorrichtung
GB2133927B (en) * 1982-12-10 1986-09-03 Nat Res Dev Electroluminescent devices
US4543511A (en) * 1983-03-24 1985-09-24 Wisconsin Alumni Research Foundation Semiconductor electrodes having regions of graded composition exhibiting photoluminescence and electroluminescence

Also Published As

Publication number Publication date
GB2152751B (en) 1987-08-26
FR2556548A1 (fr) 1985-06-14
GB8429925D0 (en) 1985-01-03
GB2152751A (en) 1985-08-07
DE3444769C2 (en, 2012) 1988-11-10
US4647813A (en) 1987-03-03
JPS60124397A (ja) 1985-07-03
DE3444769A1 (de) 1985-06-20

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