JPS638901Y2 - - Google Patents
Info
- Publication number
- JPS638901Y2 JPS638901Y2 JP1984171789U JP17178984U JPS638901Y2 JP S638901 Y2 JPS638901 Y2 JP S638901Y2 JP 1984171789 U JP1984171789 U JP 1984171789U JP 17178984 U JP17178984 U JP 17178984U JP S638901 Y2 JPS638901 Y2 JP S638901Y2
- Authority
- JP
- Japan
- Prior art keywords
- compound vapor
- mask
- sample
- compound
- defect
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 150000001875 compounds Chemical class 0.000 claims description 29
- 239000002245 particle Substances 0.000 claims description 9
- 238000005507 spraying Methods 0.000 claims description 3
- 239000007921 spray Substances 0.000 claims description 2
- 230000007547 defect Effects 0.000 description 19
- 238000010884 ion-beam technique Methods 0.000 description 11
- 150000002500 ions Chemical class 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- 239000010409 thin film Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- QFLWZFQWSBQYPS-AWRAUJHKSA-N (3S)-3-[[(2S)-2-[[(2S)-2-[5-[(3aS,6aR)-2-oxo-1,3,3a,4,6,6a-hexahydrothieno[3,4-d]imidazol-4-yl]pentanoylamino]-3-methylbutanoyl]amino]-3-(4-hydroxyphenyl)propanoyl]amino]-4-[1-bis(4-chlorophenoxy)phosphorylbutylamino]-4-oxobutanoic acid Chemical compound CCCC(NC(=O)[C@H](CC(O)=O)NC(=O)[C@H](Cc1ccc(O)cc1)NC(=O)[C@@H](NC(=O)CCCCC1SC[C@@H]2NC(=O)N[C@H]12)C(C)C)P(=O)(Oc1ccc(Cl)cc1)Oc1ccc(Cl)cc1 QFLWZFQWSBQYPS-AWRAUJHKSA-N 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000001659 ion-beam spectroscopy Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1984171789U JPS638901Y2 (enrdf_load_stackoverflow) | 1984-11-13 | 1984-11-13 | |
| EP85903053A EP0221184B1 (en) | 1984-06-26 | 1985-06-21 | Mask repairing apparatus |
| PCT/JP1985/000349 WO1986000426A1 (en) | 1984-06-26 | 1985-06-21 | Mask repairing apparatus |
| DE8585903053T DE3579236D1 (de) | 1984-06-26 | 1985-06-21 | Reparatur von masken. |
| US07/227,469 US4930439A (en) | 1984-06-26 | 1988-08-02 | Mask-repairing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1984171789U JPS638901Y2 (enrdf_load_stackoverflow) | 1984-11-13 | 1984-11-13 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6185852U JPS6185852U (enrdf_load_stackoverflow) | 1986-06-05 |
| JPS638901Y2 true JPS638901Y2 (enrdf_load_stackoverflow) | 1988-03-16 |
Family
ID=30729469
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1984171789U Expired JPS638901Y2 (enrdf_load_stackoverflow) | 1984-06-26 | 1984-11-13 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS638901Y2 (enrdf_load_stackoverflow) |
-
1984
- 1984-11-13 JP JP1984171789U patent/JPS638901Y2/ja not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6185852U (enrdf_load_stackoverflow) | 1986-06-05 |
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