JPS638901Y2 - - Google Patents

Description

[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a mask repair device for repairing white defects and black defects in masks used in semiconductor manufacturing processes.

[Conventional technology]

A method of irradiating a predetermined position of a sample with an ion beam in an atmosphere containing compound vapor and forming a patterned film at the irradiation position is attracting attention as a repair method for semiconductors and masks. By the way, a method for supplying compound vapor to a predetermined position on a sample is described in New Experimental Chemistry Course 2, Maruzen. A nutsensel as described on pages 371-379 has been used. As shown in FIG. 2, the Nutsen cell 12 containing the compound 11 is heated by a heater 13 provided on the outer periphery, and the compound evaporated by heating is ejected through an orifice 14. The Nutsusen cell 12 is equipped with a thermocouple 15 so that the heating temperature can be adjusted by a temperature controller, and the amount of compound vapor ejected can be adjusted. or,
As shown in Figure 3, a similar method of forming a patterned film through the reaction between a charged particle beam and a compound vapor is described in the proceedings of the RIKEN 15th Symposium "Ion Implantation and Submicron Processing".
A method has been proposed in which a compound gas 16 is supplied to a sub-sample chamber 18 provided in a sample chamber 17, and an electron beam 20 emitted from an electron gun 19 is irradiated onto a sample 22 through a small hole 21 in the sub-sample chamber 18. There is.

[Problem that the invention attempts to solve]

In the method explained in Fig. 2, orifice 1
The compound vapor ejected from 4 has no directionality and covers a wide range. However, since the size of a mask defect is less than 1 mm x 1 mm, the compound vapor ejected outside the defect area is not only wasted;
This may cause various inconveniences. For example, compound gas ejected outside the charged particle beam irradiation position not only contaminates the charged particle irradiation system and causes instability of the beam shape, but also deteriorates the long-term stability of the charged particle beam. Particularly in a mask repair apparatus using a field emission type ion source, compound vapor adheres to the ion source, significantly shortening the life of the ion source. Furthermore, in the method described in FIG. 2, a sub-sample chamber is provided within the sample chamber, which not only complicates the sample drive mechanism but also makes it extremely difficult to observe defects on the mask. Furthermore, mask repair equipment using ion beams has a white defect repair function that forms a thin film through the reaction of compound vapor and the ion beam, a black defect repair function that removes unnecessary thin films by ion beam sputtering, and uses secondary ions. The ability to observe the sample surface is required. That is, when repairing white defects, compound vapor is introduced into the sub-sample chamber, but when repairing black defects, the partial pressure of the compound vapor inside the sub-sample chamber must be sufficiently low. Therefore, mask repair devices using sub-sample chambers take too much time to control compound vapor on and off, leaving problems with speed.

[Means to try to solve problems]

In the present invention, a plurality of nozzles that spray compound vapor at desired positions are arranged around a charged particle irradiation point, and the spraying of compound vapor is limited to a predetermined area.
In addition to reducing the amount of wasted compound vapor, the compound vapor is sprayed from multiple directions to the charged particle irradiation point, so a thin film is formed under the same conditions on both the flat part of the sample and the concave part adjacent to the pattern. This is a mask repair device characterized by making it possible to perform the following operations. Further, since a nozzle is used to turn on and off the compound vapor, it can be easily controlled by the valve of the compound vapor supply device.

〔Example〕

Embodiments of the present invention will be described below with reference to the drawings. In FIG. 1, an ion beam 2 emitted from an ion source 1 is focused by an objective lens 4 of an ion beam irradiation system 3 onto the surface of a sample 6 placed on a sample stage 5. The location of the defect determined in advance by the defect inspection device is determined by driving the sample stage 6, scanning the ion beam 2, and observing the surface of the mask with an observation means (not shown) to determine the shape and position of the defect. I can do it. The shape of the defect is input to the ion beam control device, and the defect in the mask is corrected by scanning the ion beam. In the case of white defects, compound vapor is sprayed from the compound vapor supply device 7 through the valve 8 and through the nozzle 9 to the ion beam irradiation position, and a thin film is created by the reaction between the compound vapor and the ion beam. Fixed. In addition, in the case of a black defect, the supply of compound vapor is cut off by closing the valve 8,
Corrected by the effect of ion sputtering.

[Effect of idea]

According to the present invention, a thin film can be formed with a small amount of compound vapor sprayed not only on the flat parts of the mask pattern but also on the shadow parts of the pattern because the compound vapor is sprayed at desired positions using a plurality of nozzles. Therefore, there is less dirt in the sample chamber, and the life of the ion source can be extended. In addition, since it is possible to observe the defect location on the mask, correct black defects, and correct white defects with one device, mask correction can be performed accurately and quickly. can. The mask repair device according to the present invention is
It has become clear that it can be used not only for modifying photomasks and X-ray masks, but also for connecting and disconnecting VLSI wiring.

[Brief explanation of the drawing]

FIG. 1 shows a mask repair device according to the present invention. FIG. 2 shows a conventional compound vapor spraying device. FIG. 3 shows a currently proposed method for forming a thin film using a reaction between charged particles and compound vapor. 1...Ion source, 2...Ion beam, 5...
Sample stage, 8... valve, 9... nozzle.

Claims (1)

[Claims for Utility Model Registration] (1) In a mask repair device that is equipped with a sample stage on which a mask is mounted in a vacuum chamber and driven in the A mask repair device characterized in that a plurality of nozzles that spray steam are arranged around a charged particle irradiation position. (2) The mask repair device according to claim 1, characterized in that the nozzle of the compound vapor spraying device is opposed to the charged particle irradiation position.