JPS6381983A - 微細中空室の製造方法 - Google Patents

微細中空室の製造方法

Info

Publication number
JPS6381983A
JPS6381983A JP22737586A JP22737586A JPS6381983A JP S6381983 A JPS6381983 A JP S6381983A JP 22737586 A JP22737586 A JP 22737586A JP 22737586 A JP22737586 A JP 22737586A JP S6381983 A JPS6381983 A JP S6381983A
Authority
JP
Japan
Prior art keywords
epitaxial layer
hollow chamber
manufacturing
silicon substrate
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP22737586A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0565065B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Inventor
Kyoichi Ikeda
恭一 池田
Tetsuya Watanabe
哲也 渡辺
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Yokogawa Electric Corp
Original Assignee
Yokogawa Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Yokogawa Electric Corp filed Critical Yokogawa Electric Corp
Priority to JP22737586A priority Critical patent/JPS6381983A/ja
Publication of JPS6381983A publication Critical patent/JPS6381983A/ja
Publication of JPH0565065B2 publication Critical patent/JPH0565065B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Pressure Sensors (AREA)
  • Weting (AREA)
JP22737586A 1986-09-26 1986-09-26 微細中空室の製造方法 Granted JPS6381983A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22737586A JPS6381983A (ja) 1986-09-26 1986-09-26 微細中空室の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22737586A JPS6381983A (ja) 1986-09-26 1986-09-26 微細中空室の製造方法

Publications (2)

Publication Number Publication Date
JPS6381983A true JPS6381983A (ja) 1988-04-12
JPH0565065B2 JPH0565065B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1993-09-16

Family

ID=16859821

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22737586A Granted JPS6381983A (ja) 1986-09-26 1986-09-26 微細中空室の製造方法

Country Status (1)

Country Link
JP (1) JPS6381983A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0595298A1 (en) * 1992-10-28 1994-05-04 Matsushita Electronics Corporation A semiconductor device having a hollow around a gate electrode and a method for producing the same
JP2006020001A (ja) * 2004-06-30 2006-01-19 Kyocera Kinseki Corp 圧電振動子の製造方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0595298A1 (en) * 1992-10-28 1994-05-04 Matsushita Electronics Corporation A semiconductor device having a hollow around a gate electrode and a method for producing the same
US5536971A (en) * 1992-10-28 1996-07-16 Matsushita Electronics Corporation Semiconductor device having a hollow around a gate electrode and a method for producing the same
US5559046A (en) * 1992-10-28 1996-09-24 Matsushita Electronics Corporation Semiconductor device having a hollow around a gate electrode and a method for producing the same
JP2006020001A (ja) * 2004-06-30 2006-01-19 Kyocera Kinseki Corp 圧電振動子の製造方法

Also Published As

Publication number Publication date
JPH0565065B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1993-09-16

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