JPS6378229U - - Google Patents

Info

Publication number
JPS6378229U
JPS6378229U JP17225786U JP17225786U JPS6378229U JP S6378229 U JPS6378229 U JP S6378229U JP 17225786 U JP17225786 U JP 17225786U JP 17225786 U JP17225786 U JP 17225786U JP S6378229 U JPS6378229 U JP S6378229U
Authority
JP
Japan
Prior art keywords
sensor chip
integrated semiconductor
sensor
diaphragm
semiconductor pressure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17225786U
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP17225786U priority Critical patent/JPS6378229U/ja
Publication of JPS6378229U publication Critical patent/JPS6378229U/ja
Pending legal-status Critical Current

Links

Landscapes

  • Measuring Fluid Pressure (AREA)
  • Pressure Sensors (AREA)

Description

【図面の簡単な説明】
第１図は本考案の一実施例の構成説明図、第２
図は第１図の動作説明図、第３図は従来より一般
に使用されている従来例の構成説明図、第４図は
従来より一般に使用されている他の従来例の構成
説明図である。 １……センサチツプ、１１……圧力感知部、１
１１……凹部、１１２……ダイアフラム、２……
ピエゾ抵抗ゲージ、３……基板、３１……導圧孔
、４……信号処理回路。

Claims (1)

  1. 【実用新案登録請求の範囲】 (1) 半導体からなるセンサチツプと、該センサ
    チツプにダイアフラムを形成する凹部と、前記ダ
    イアフラムに設けられたピエゾ抵抗ゲージと、前
    記センサチツプに設けられ該ピエゾ抵抗ゲージの
    出力信号を処理する信号処理回路とを具備する集
    積形半導体圧力センサにおいて、前記処理回路が
    測定スパン圧力によつて発生する二つの主応力が
    ほぼ等しくなる前記センサチツプの位置に配置さ
    れたことを特徴とする集積形半導体圧力センサ。 (2) ピエゾ抵抗素子として剪断形ゲージが用い
    られたことを特徴とする集積形半導体圧力センサ
    。
JP17225786U 1986-11-10 1986-11-10 Pending JPS6378229U (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17225786U JPS6378229U (ja) 1986-11-10 1986-11-10

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17225786U JPS6378229U (ja) 1986-11-10 1986-11-10

Publications (1)

Publication Number Publication Date
JPS6378229U true JPS6378229U (ja) 1988-05-24

Family

ID=31108635

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17225786U Pending JPS6378229U (ja) 1986-11-10 1986-11-10

Country Status (1)

Country Link
JP (1) JPS6378229U (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003302298A (ja) * 2002-04-10 2003-10-24 Denso Corp 力学量検出装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53114689A (en) * 1977-03-17 1978-10-06 Hitachi Ltd Semiconductor strain gauge type diaphragm
JPS53114690A (en) * 1977-03-17 1978-10-06 Yokogawa Hokushin Electric Corp Thin film strain gauge convertor
JPS53126880A (en) * 1977-04-13 1978-11-06 Hitachi Ltd Silicon diaphragm type strain gauge

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53114689A (en) * 1977-03-17 1978-10-06 Hitachi Ltd Semiconductor strain gauge type diaphragm
JPS53114690A (en) * 1977-03-17 1978-10-06 Yokogawa Hokushin Electric Corp Thin film strain gauge convertor
JPS53126880A (en) * 1977-04-13 1978-11-06 Hitachi Ltd Silicon diaphragm type strain gauge

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003302298A (ja) * 2002-04-10 2003-10-24 Denso Corp 力学量検出装置

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