JPS6376434A - プラズマ処理装置及びプラズマクリーニング方法 - Google Patents

プラズマ処理装置及びプラズマクリーニング方法

Info

Publication number
JPS6376434A
JPS6376434A JP21947586A JP21947586A JPS6376434A JP S6376434 A JPS6376434 A JP S6376434A JP 21947586 A JP21947586 A JP 21947586A JP 21947586 A JP21947586 A JP 21947586A JP S6376434 A JPS6376434 A JP S6376434A
Authority
JP
Japan
Prior art keywords
plasma
etching
processing
frequency power
deposits
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP21947586A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0533816B2 (enrdf_load_stackoverflow
Inventor
Norio Nakazato
仲里　則男
Fujitsugu Nakatsui
中対　藤次
Seiichi Watanabe
成一 渡辺
Kimio Muramatsu
村松　公夫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP21947586A priority Critical patent/JPS6376434A/ja
Publication of JPS6376434A publication Critical patent/JPS6376434A/ja
Publication of JPH0533816B2 publication Critical patent/JPH0533816B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Drying Of Semiconductors (AREA)
JP21947586A 1986-09-19 1986-09-19 プラズマ処理装置及びプラズマクリーニング方法 Granted JPS6376434A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21947586A JPS6376434A (ja) 1986-09-19 1986-09-19 プラズマ処理装置及びプラズマクリーニング方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21947586A JPS6376434A (ja) 1986-09-19 1986-09-19 プラズマ処理装置及びプラズマクリーニング方法

Publications (2)

Publication Number Publication Date
JPS6376434A true JPS6376434A (ja) 1988-04-06
JPH0533816B2 JPH0533816B2 (enrdf_load_stackoverflow) 1993-05-20

Family

ID=16736016

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21947586A Granted JPS6376434A (ja) 1986-09-19 1986-09-19 プラズマ処理装置及びプラズマクリーニング方法

Country Status (1)

Country Link
JP (1) JPS6376434A (enrdf_load_stackoverflow)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01115123A (ja) * 1987-10-29 1989-05-08 Furukawa Electric Co Ltd:The プラズマｃｖｄ装置のクリーニング方法
JPH01296622A (ja) * 1988-05-24 1989-11-30 Semiconductor Energy Lab Co Ltd プラズマ気相反応方法
JPH0286127A (ja) * 1988-09-22 1990-03-27 Hitachi Ltd プラズマクリーニング方法
US5228939A (en) * 1991-12-30 1993-07-20 Cheng Chu Single wafer plasma etching system
US5585012A (en) * 1994-12-15 1996-12-17 Applied Materials Inc. Self-cleaning polymer-free top electrode for parallel electrode etch operation
US5861601A (en) * 1993-11-12 1999-01-19 Hitachi, Ltd. Microwave plasma processing apparatus and method
JP2008105152A (ja) * 2006-10-27 2008-05-08 Tsudakoma Corp 傾斜テーブル装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5615044A (en) * 1979-07-18 1981-02-13 Toshiba Corp Plasma cleaning method
JPS5812347A (ja) * 1981-07-15 1983-01-24 Toshiba Corp 半導体ウエ−ハ
JPS5846639A (ja) * 1981-09-14 1983-03-18 Hitachi Ltd プラズマ処理装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5615044A (en) * 1979-07-18 1981-02-13 Toshiba Corp Plasma cleaning method
JPS5812347A (ja) * 1981-07-15 1983-01-24 Toshiba Corp 半導体ウエ−ハ
JPS5846639A (ja) * 1981-09-14 1983-03-18 Hitachi Ltd プラズマ処理装置

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01115123A (ja) * 1987-10-29 1989-05-08 Furukawa Electric Co Ltd:The プラズマｃｖｄ装置のクリーニング方法
JPH01296622A (ja) * 1988-05-24 1989-11-30 Semiconductor Energy Lab Co Ltd プラズマ気相反応方法
JPH0286127A (ja) * 1988-09-22 1990-03-27 Hitachi Ltd プラズマクリーニング方法
US5228939A (en) * 1991-12-30 1993-07-20 Cheng Chu Single wafer plasma etching system
US5861601A (en) * 1993-11-12 1999-01-19 Hitachi, Ltd. Microwave plasma processing apparatus and method
US5585012A (en) * 1994-12-15 1996-12-17 Applied Materials Inc. Self-cleaning polymer-free top electrode for parallel electrode etch operation
KR100403114B1 (ko) * 1994-12-15 2004-02-11 어플라이드 머티어리얼스, 인코포레이티드 병렬전극에칭동작을위한중합체없는상부전극의자체세척방법및장치
JP2008105152A (ja) * 2006-10-27 2008-05-08 Tsudakoma Corp 傾斜テーブル装置

Also Published As

Publication number Publication date
JPH0533816B2 (enrdf_load_stackoverflow) 1993-05-20

Similar Documents

Publication Publication Date Title
KR100403114B1 (ko) 병렬전극에칭동작을위한중합체없는상부전극의자체세척방법및장치
KR950006346B1 (ko) 정전 흡착 방법
JPS6376434A (ja) プラズマ処理装置及びプラズマクリーニング方法
JPH10321604A (ja) プラズマ処理装置
JPH11214364A (ja) 半導体ウェハ処理装置
JPH0822980A (ja) プラズマ処理装置
JPH07106307A (ja) プラズマ処理装置およびプラズマ処理方法
JPH11293468A (ja) プラズマｃｖｄ装置およびそのクリーニング方法
JPS6218030A (ja) イオンビ−ムエツチング装置
JPH04271122A (ja) プラズマ処理装置
JPH08311665A (ja) プラズマプロセス装置の反応室のクリーニング方法
JPS63253628A (ja) プラズマ処理装置
JP2006117995A (ja) スパッタ装置
JP3207638B2 (ja) 半導体製造装置のクリーニング方法
JPH0454373B2 (enrdf_load_stackoverflow)
JP3404434B2 (ja) マイクロ波プラズマ装置のクリーニング方法
JPH0831442B2 (ja) プラズマ処理方法及び装置
JP3895919B2 (ja) クリーニング装置
JPH0770771A (ja) 物理蒸着室中のシールドの清浄方法
JPS61216327A (ja) プラズマ処理方法及び装置
JPH08316214A (ja) プラズマ処理装置
JPH11121437A (ja) 真空処理装置
JPH09260360A (ja) プラズマ処理方法及び装置
JPS62287623A (ja) プラズマ処理方法及び装置
CN118692938A (zh) 预清洗腔室、半导体工艺设备及清洗方法