JPS637471B2 - - Google Patents
Info
- Publication number
- JPS637471B2 JPS637471B2 JP56203586A JP20358681A JPS637471B2 JP S637471 B2 JPS637471 B2 JP S637471B2 JP 56203586 A JP56203586 A JP 56203586A JP 20358681 A JP20358681 A JP 20358681A JP S637471 B2 JPS637471 B2 JP S637471B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor region
- type
- conductivity type
- thyristor
- zero
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 117
- 230000003287 optical effect Effects 0.000 claims description 21
- 230000005669 field effect Effects 0.000 claims description 5
- 239000004020 conductor Substances 0.000 claims description 4
- 230000002457 bidirectional effect Effects 0.000 claims description 2
- 230000000694 effects Effects 0.000 description 6
- 239000012535 impurity Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 3
- 238000006073 displacement reaction Methods 0.000 description 3
- 230000007257 malfunction Effects 0.000 description 2
- 230000001443 photoexcitation Effects 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/111—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristors
- H01L31/1113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristors the device being a photothyristor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/7404—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device
- H01L29/742—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a field effect transistor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Electromagnetism (AREA)
- Thyristors (AREA)
- Light Receiving Elements (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56203586A JPS58105572A (ja) | 1981-12-18 | 1981-12-18 | ゼロクロス光サイリスタ |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56203586A JPS58105572A (ja) | 1981-12-18 | 1981-12-18 | ゼロクロス光サイリスタ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58105572A JPS58105572A (ja) | 1983-06-23 |
| JPS637471B2 true JPS637471B2 (de) | 1988-02-17 |
Family
ID=16476532
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56203586A Granted JPS58105572A (ja) | 1981-12-18 | 1981-12-18 | ゼロクロス光サイリスタ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58105572A (de) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4105646A1 (de) * | 1990-02-23 | 1991-08-29 | Matsushita Electric Works Ltd | Verfahren zum herstellen eines optisch getriggerten lateralen thyristors |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6035571A (ja) * | 1983-08-08 | 1985-02-23 | Sanken Electric Co Ltd | 半導体装置 |
| JPS6074678A (ja) * | 1983-09-30 | 1985-04-26 | Toshiba Corp | 半導体装置 |
| JPH0697692B2 (ja) * | 1984-01-17 | 1994-11-30 | 株式会社東芝 | 半導体装置 |
| JPS63124477A (ja) * | 1986-11-12 | 1988-05-27 | Mitsubishi Electric Corp | ゼロクロス機能付光結合素子 |
| JPH02126677A (ja) * | 1988-11-07 | 1990-05-15 | Toshiba Corp | 半導体装置 |
| JPH04249370A (ja) * | 1991-02-05 | 1992-09-04 | Sharp Corp | フォトトライアック |
| CN108288656B (zh) * | 2018-03-08 | 2020-03-31 | 电子科技大学 | 高di/dt耐量光控晶闸管 |
| CN108493291B (zh) * | 2018-04-13 | 2020-03-31 | 电子科技大学 | 高di/dt光控晶闸管版图设计方法 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51146190A (en) * | 1975-06-11 | 1976-12-15 | Hitachi Ltd | Diode circuit |
| JPS5235586A (en) * | 1975-09-12 | 1977-03-18 | Mitsubishi Electric Corp | Semiconductor device |
| JPS5245288A (en) * | 1975-06-19 | 1977-04-09 | Asea Ab | Semiconductor device |
| JPS5477584A (en) * | 1978-11-13 | 1979-06-21 | Hitachi Ltd | Semiconductor switch |
| JPS553694A (en) * | 1978-06-16 | 1980-01-11 | Motorola Inc | Device for triggering monolithic semiconductor |
-
1981
- 1981-12-18 JP JP56203586A patent/JPS58105572A/ja active Granted
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51146190A (en) * | 1975-06-11 | 1976-12-15 | Hitachi Ltd | Diode circuit |
| JPS5245288A (en) * | 1975-06-19 | 1977-04-09 | Asea Ab | Semiconductor device |
| JPS5235586A (en) * | 1975-09-12 | 1977-03-18 | Mitsubishi Electric Corp | Semiconductor device |
| JPS553694A (en) * | 1978-06-16 | 1980-01-11 | Motorola Inc | Device for triggering monolithic semiconductor |
| JPS5477584A (en) * | 1978-11-13 | 1979-06-21 | Hitachi Ltd | Semiconductor switch |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4105646A1 (de) * | 1990-02-23 | 1991-08-29 | Matsushita Electric Works Ltd | Verfahren zum herstellen eines optisch getriggerten lateralen thyristors |
| DE4105646C2 (de) * | 1990-02-23 | 1994-07-28 | Matsushita Electric Works Ltd | Verfahren zum Herstellen eines optisch triggerbaren lateralen Thyristors |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58105572A (ja) | 1983-06-23 |
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