JPS6373625A - 半導体ウエ−ハマウンテイング用樹脂薄膜層の形成方法 - Google Patents
半導体ウエ−ハマウンテイング用樹脂薄膜層の形成方法Info
- Publication number
- JPS6373625A JPS6373625A JP61217183A JP21718386A JPS6373625A JP S6373625 A JPS6373625 A JP S6373625A JP 61217183 A JP61217183 A JP 61217183A JP 21718386 A JP21718386 A JP 21718386A JP S6373625 A JPS6373625 A JP S6373625A
- Authority
- JP
- Japan
- Prior art keywords
- plate
- film layer
- resin
- thin film
- holes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229920005989 resin Polymers 0.000 title claims abstract description 74
- 239000011347 resin Substances 0.000 title claims abstract description 74
- 239000004065 semiconductor Substances 0.000 title claims abstract description 35
- 239000010409 thin film Substances 0.000 title claims abstract description 33
- 230000015572 biosynthetic process Effects 0.000 title 1
- 238000000034 method Methods 0.000 claims abstract description 28
- 239000011248 coating agent Substances 0.000 claims abstract description 26
- 229920001187 thermosetting polymer Polymers 0.000 claims abstract description 6
- 239000003822 epoxy resin Substances 0.000 claims abstract description 5
- 229920000647 polyepoxide Polymers 0.000 claims abstract description 5
- 239000000853 adhesive Substances 0.000 claims description 12
- 230000001070 adhesive effect Effects 0.000 claims description 12
- 238000000576 coating method Methods 0.000 claims description 3
- 229920001169 thermoplastic Polymers 0.000 claims 1
- 239000004416 thermosoftening plastic Substances 0.000 claims 1
- 238000005498 polishing Methods 0.000 abstract description 19
- 239000000463 material Substances 0.000 abstract description 14
- 239000007767 bonding agent Substances 0.000 abstract 2
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 29
- 239000010408 film Substances 0.000 description 11
- 239000004744 fabric Substances 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 239000000919 ceramic Substances 0.000 description 3
- 238000005553 drilling Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229920005992 thermoplastic resin Polymers 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 229920001807 Urea-formaldehyde Polymers 0.000 description 1
- BZHJMEDXRYGGRV-UHFFFAOYSA-N Vinyl chloride Chemical compound ClC=C BZHJMEDXRYGGRV-UHFFFAOYSA-N 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 238000005187 foaming Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- -1 polyethylene Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
Landscapes
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61217183A JPS6373625A (ja) | 1986-09-17 | 1986-09-17 | 半導体ウエ−ハマウンテイング用樹脂薄膜層の形成方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61217183A JPS6373625A (ja) | 1986-09-17 | 1986-09-17 | 半導体ウエ−ハマウンテイング用樹脂薄膜層の形成方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6373625A true JPS6373625A (ja) | 1988-04-04 |
| JPH0469813B2 JPH0469813B2 (enrdf_load_stackoverflow) | 1992-11-09 |
Family
ID=16700162
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61217183A Granted JPS6373625A (ja) | 1986-09-17 | 1986-09-17 | 半導体ウエ−ハマウンテイング用樹脂薄膜層の形成方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6373625A (enrdf_load_stackoverflow) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04148548A (ja) * | 1990-10-12 | 1992-05-21 | Matsushita Electric Ind Co Ltd | 半導体基板支持装置 |
| EP0868975A1 (en) * | 1997-04-04 | 1998-10-07 | Tokyo Seimitsu Co.,Ltd. | Polishing apparatus |
| WO2000025981A1 (fr) * | 1998-10-30 | 2000-05-11 | Shin-Etsu Handotai Co., Ltd. | Plan non poli de maintien/travail et son procede de fabrication ; technique et dispositif de polissage |
| JP2003103455A (ja) * | 2001-09-28 | 2003-04-08 | Shin Etsu Handotai Co Ltd | ワーク保持盤並びにワークの研磨装置及び研磨方法 |
| WO2006103854A1 (ja) * | 2005-03-28 | 2006-10-05 | Nikon Corporation | 吸着装置、研磨装置、半導体デバイス及び半導体デバイス製造方法 |
| JP2009274169A (ja) * | 2008-05-14 | 2009-11-26 | Nikon Corp | 吸着装置、吸着装置の製造方法および研磨装置 |
-
1986
- 1986-09-17 JP JP61217183A patent/JPS6373625A/ja active Granted
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04148548A (ja) * | 1990-10-12 | 1992-05-21 | Matsushita Electric Ind Co Ltd | 半導体基板支持装置 |
| EP0868975A1 (en) * | 1997-04-04 | 1998-10-07 | Tokyo Seimitsu Co.,Ltd. | Polishing apparatus |
| US6203414B1 (en) | 1997-04-04 | 2001-03-20 | Tokyo Seimitsu Co., Ltd. | Polishing apparatus |
| KR100668161B1 (ko) * | 1998-10-30 | 2007-01-11 | 신에쯔 한도타이 가부시키가이샤 | 연마용 워크피스 홀더 및 그 제조방법, 워크피스의 연마방법 및 연마장치 |
| WO2000025981A1 (fr) * | 1998-10-30 | 2000-05-11 | Shin-Etsu Handotai Co., Ltd. | Plan non poli de maintien/travail et son procede de fabrication ; technique et dispositif de polissage |
| US6386957B1 (en) | 1998-10-30 | 2002-05-14 | Shin-Etsu Handotai Co., Ltd. | Workpiece holder for polishing, method for producing the same, method for polishing workpiece, and polishing apparatus |
| JP2003103455A (ja) * | 2001-09-28 | 2003-04-08 | Shin Etsu Handotai Co Ltd | ワーク保持盤並びにワークの研磨装置及び研磨方法 |
| WO2006103854A1 (ja) * | 2005-03-28 | 2006-10-05 | Nikon Corporation | 吸着装置、研磨装置、半導体デバイス及び半導体デバイス製造方法 |
| US8371564B2 (en) | 2005-03-28 | 2013-02-12 | Nikon Corporation | Suction apparatus, polishing apparatus, semiconductor device, and method of manufacturing a semiconductor device |
| KR101290845B1 (ko) * | 2005-03-28 | 2013-08-07 | 가부시키가이샤 니콘 | 흡착 장치, 연마 장치, 반도체 디바이스 및 반도체디바이스 제조 방법 |
| KR101367010B1 (ko) * | 2005-03-28 | 2014-02-24 | 가부시키가이샤 니콘 | 흡착 장치, 연마 장치, 반도체 디바이스 및 반도체 디바이스 제조 방법 |
| US8662485B2 (en) | 2005-03-28 | 2014-03-04 | Nikon Corporation | Suction apparatus, polishing apparatus, semiconductor device, and method of manufacturing a semiconductor device |
| JP2009274169A (ja) * | 2008-05-14 | 2009-11-26 | Nikon Corp | 吸着装置、吸着装置の製造方法および研磨装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0469813B2 (enrdf_load_stackoverflow) | 1992-11-09 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| LAPS | Cancellation because of no payment of annual fees |