JPS6369977A - 均一な被膜を形成する為の光ｃｖｄ装置 - Google Patents

均一な被膜を形成する為の光ｃｖｄ装置

Info

Publication number
JPS6369977A
JPS6369977A JP21332586A JP21332586A JPS6369977A JP S6369977 A JPS6369977 A JP S6369977A JP 21332586 A JP21332586 A JP 21332586A JP 21332586 A JP21332586 A JP 21332586A JP S6369977 A JPS6369977 A JP S6369977A
Authority
JP
Japan
Prior art keywords
substrate
light source
cart
holder
illuminance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP21332586A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0210866B2 (enrdf_load_stackoverflow
Inventor
Takashi Inushima
犬島　喬
Shigenori Hayashi
茂則 林
Toru Takayama
徹 高山
Masaichi Otaka
尾高　政一
Naoki Hirose
直樹 広瀬
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP21332586A priority Critical patent/JPS6369977A/ja
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to KR1019870009832A priority patent/KR910003742B1/ko
Priority to DE8787307896T priority patent/DE3782991T2/de
Priority to EP19920104124 priority patent/EP0490883A1/en
Priority to EP87307896A priority patent/EP0260097B1/en
Priority to CN87106283A priority patent/CN1020290C/zh
Publication of JPS6369977A publication Critical patent/JPS6369977A/ja
Priority to US07/194,206 priority patent/US4950624A/en
Publication of JPH0210866B2 publication Critical patent/JPH0210866B2/ja
Priority to US07/971,242 priority patent/US5427824A/en
Priority to US08/376,736 priority patent/US5629245A/en
Priority to US08/769,115 priority patent/US5855970A/en
Priority to US09/188,382 priority patent/US6013338A/en
Priority to US09/398,059 priority patent/US6520189B1/en
Priority to US10/339,631 priority patent/US20030140941A1/en
Granted legal-status Critical Current

Links

Landscapes

  • Chemical Vapour Deposition (AREA)
JP21332586A 1986-09-09 1986-09-09 均一な被膜を形成する為の光ｃｖｄ装置 Granted JPS6369977A (ja)

Priority Applications (13)

Application Number Priority Date Filing Date Title
JP21332586A JPS6369977A (ja) 1986-09-09 1986-09-09 均一な被膜を形成する為の光ｃｖｄ装置
KR1019870009832A KR910003742B1 (ko) 1986-09-09 1987-09-05 Cvd장치
DE8787307896T DE3782991T2 (de) 1986-09-09 1987-09-07 Cvd-verfahren und vorrichtung.
EP19920104124 EP0490883A1 (en) 1986-09-09 1987-09-07 CVD apparatus
EP87307896A EP0260097B1 (en) 1986-09-09 1987-09-07 Cvd method and apparatus
CN87106283A CN1020290C (zh) 1986-09-09 1987-09-09 化学汽相淀积装置
US07/194,206 US4950624A (en) 1986-09-09 1988-05-16 Method of depositing films using photo-CVD with chamber plasma cleaning
US07/971,242 US5427824A (en) 1986-09-09 1992-09-08 CVD apparatus
US08/376,736 US5629245A (en) 1986-09-09 1995-01-23 Method for forming a multi-layer planarization structure
US08/769,115 US5855970A (en) 1986-09-09 1996-12-18 Method of forming a film on a substrate
US09/188,382 US6013338A (en) 1986-09-09 1998-11-10 CVD apparatus
US09/398,059 US6520189B1 (en) 1986-09-09 1999-09-17 CVD apparatus
US10/339,631 US20030140941A1 (en) 1986-09-09 2003-01-10 CVD apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21332586A JPS6369977A (ja) 1986-09-09 1986-09-09 均一な被膜を形成する為の光ｃｖｄ装置

Publications (2)

Publication Number Publication Date
JPS6369977A true JPS6369977A (ja) 1988-03-30
JPH0210866B2 JPH0210866B2 (enrdf_load_stackoverflow) 1990-03-09

Family

ID=16637282

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21332586A Granted JPS6369977A (ja) 1986-09-09 1986-09-09 均一な被膜を形成する為の光ｃｖｄ装置

Country Status (1)

Country Link
JP (1) JPS6369977A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5522935A (en) * 1992-02-28 1996-06-04 Nec Corporation Plasma CVD apparatus for manufacturing a semiconductor device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5424990A (en) * 1977-07-26 1979-02-24 Toyo Soda Mfg Co Ltd Gas phase polymerization of vinyl chloride and/or vinyl chlroide analogue
JPS5630058A (en) * 1979-08-17 1981-03-26 Kawasaki Steel Corp Preventing method for leakage of molten steel through porus brick

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5424990A (en) * 1977-07-26 1979-02-24 Toyo Soda Mfg Co Ltd Gas phase polymerization of vinyl chloride and/or vinyl chlroide analogue
JPS5630058A (en) * 1979-08-17 1981-03-26 Kawasaki Steel Corp Preventing method for leakage of molten steel through porus brick

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5522935A (en) * 1992-02-28 1996-06-04 Nec Corporation Plasma CVD apparatus for manufacturing a semiconductor device

Also Published As

Publication number Publication date
JPH0210866B2 (enrdf_load_stackoverflow) 1990-03-09

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